The Invention Relates to a Low Stress Packaging Technology for a High Temperature Pressure Sensor

2021 ◽  
Keyword(s):  
High Temperature ◽  
Pressure Sensor ◽  
Packaging Technology

scholarly journals Study on the Stability of the Electrical Connection of High-Temperature Pressure Sensor Based on the Piezoresistive Effect of P-Type SiC

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 216
Author(s):  
Yongwei Li ◽  
Ting Liang ◽  
Cheng Lei ◽  
Qiang Li ◽  
Zhiqiang Li ◽  
...  
Keyword(s):  
High Temperature ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
Extreme Environment ◽  
Maximum Temperature ◽  
Piezoresistive Effect ◽  
Electrical Connection ◽  
Contact Stability ◽  
The Stability ◽  
P Type

In this study, a preparation method for the high-temperature pressure sensor based on the piezoresistive effect of p-type SiC is presented. The varistor with a positive trapezoidal shape was designed and etched innovatively to improve the contact stability between the metal and SiC varistor. Additionally, the excellent ohmic contact was formed by annealing at 950 °C between Ni/Al/Ni/Au and p-type SiC with a doping concentration of 1018cm−3. The aging sensor was tested for varistors in the air of 25 °C–600 °C. The resistance value of the varistors initially decreased and then increased with the increase of temperature and reached the minimum at ~450 °C. It could be calculated that the varistors at ~100 °C exhibited the maximum temperature coefficient of resistance (TCR) of ~−0.35%/°C. The above results indicated that the sensor had a stable electrical connection in the air environment of ≤600 °C. Finally, the encapsulated sensor was subjected to pressure/depressure tests at room temperature. The test results revealed that the sensor output sensitivity was approximately 1.09 mV/V/bar, which is better than other SiC pressure sensors. This study has a great significance for the test of mechanical parameters under the extreme environment of 600 °C.

scholarly journals A Ceramic Diffusion Bonding Method for Passive LC High-Temperature Pressure Sensor

Sensors ◽  
2018 ◽  
Vol 18 (8) ◽  
pp. 2676
Author(s):  
Chen Li ◽  
Boshan Sun ◽  
Yanan Xue ◽  
Jijun Xiong
Keyword(s):  
High Temperature ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
Alumina Ceramic ◽  
Harsh Environments ◽  
Ceramic Substrates ◽  
Integrated Technology ◽  
All Ceramic ◽  
Test Platform ◽  
Bonding Method

Alumina ceramic is a highly promising material for fabricating high-temperature pressure sensors. In this paper, a direct bonding method for fabricating a sensitive cavity with alumina ceramic is presented. Alumina ceramic substrates were bonded together to form a sensitive cavity for high-temperature pressure environments. The device can sense pressure parameters at high temperatures. To verify the sensitivity performance of the fabrication method in high-temperature environments, an inductor and capacitor were integrated on the ceramic substrate with the fabricated sensitive cavity to form a wireless passive LC pressure sensor with thick-film integrated technology. Finally, the fabricated sensor was tested using a system test platform. The experimental results show that the sensor can realize pressure measurements above 900 °C, confirming that the fabricated sensitive cavity has excellent sealing properties. Therefore, the direct bonding method can potentially be used for developing all-ceramic high-temperature pressure sensors for application in harsh environments.

Diamond Anvil Pressure Cell and Pressure Sensor for High-Temperature Use

1982 ◽  
Vol 21 (Part 1, No. 11) ◽  
pp. 1647-1649 ◽  
Author(s):  
Haruo Arashi ◽  
Mareo Ishigame
Keyword(s):  
High Temperature ◽  
Pressure Sensor ◽  
Pressure Cell ◽  
Diamond Anvil

The Development and Qualification of a DC-DC Converter for 225°C (437°F) Operating Temperature

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000214-000221
Author(s):  
Bob Hunt
Keyword(s):  
High Temperature ◽  
Operating Temperature ◽  
Reliable Operation ◽  
Packaging Technology ◽  
High Temperature Electronic

This paper presents the development and qualification of high temperature electronic module packaging technology to service the requirements for extended and reliable operation at 225°C (437°F) for applications in the Oil & Gas, Automotive and Aerospace markets. It also covers the application of this technology to the first in a range of DC-DC converter modules and is based on Cissoid's ‘ETNA’ semiconductor components.

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