scholarly journals FAST LOW POWER FREQUENCY SYNTHESIS APPLICATIONS BY USING A DCVSL DELAY CELL

2015 ◽  
pp. 220-225
Author(s):  
N. KUMAR BABU ◽  
P. SASIBALA
Keyword(s):  
Low Power ◽  
High Speed ◽  
Schmitt Trigger ◽  
Cmos Technology ◽  
Propagation Delay ◽  
Model Parameters ◽  
Cmos Process ◽  
Ultra Low Power ◽  
Delay Cell ◽  
Parasitic Effects

In this paper, we proposed two new structures for differential cascode voltage switch logic (DCVSL) pull-up stage. In conventional DCVSL structure these lies a drawback i.e. low-to-high propagation delay is larger than high-to-low propagation delay which could be reduced by using DCVSL-R. Using resistors in DCVSL-R structure, parasitic effects are coming into picture and it occupies more area on the chip [1]. To minimize these problems we propose a new Ultra Low Power Diode (ULPD) structures in place of resistors. This provides the minimum parasitic effects and occupies less area on the chip. Second one uses Complementary Pass Transistor Logic (CPTL) structure, which provides complementary outputs. This is an alternate circuit for conventional DCVSL structure. The performances of the proposed circuits are examined using cadence and model parameters of a 180nm CMOS process. This simulation result of the two circuits is presented and is compared. These circuits are suitable for VLSI implementation. Secondly, we proposed two new CMOS Schmitt trigger circuits. These Schmitt trigger circuits are evaluated both analytically and numerically with the sources from proposed ULPD ring oscillators. The hysteresis curves of the circuits are presented. The Schmitt triggers introduced here are most suitable for high speed applications. The proposed circuits havebeen designed in TSMC-0.18μm 1.8v CMOS technology and analyzed using spectre from cadence Design systems at 50MHz and 103MHz.

scholarly journals ULPD and CPTL Pull-Up Stages for Differential Cascode Voltage Switch Logic

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Avireni Srinivasulu ◽  
Madugula Rajesh
Keyword(s):  
Low Power ◽  
Propagation Delay ◽  
Vlsi Implementation ◽  
Model Parameters ◽  
Cmos Process ◽  
Ultra Low Power ◽  
Pass Transistor ◽  
Simulation Results ◽  
Parasitic Effects ◽  
Power Diode

Two new structures for Differential Cascode Voltage Switch Logic (DCVSL) pull-up stage are proposed. In conventional DCVSL structure, low-to-high propagation delay is larger than high-to-low propagation delay this could be brought down by using DCVSL-R. Promoting resistors in DCVSL-R structure increase the parasitic effects and unavoidable delay and it also occupies more area on the chip (Turker et al., 2011). In order to minimize these problems, a new Ultra-Low-Power Diode (ULPD) structures in place of resistors have been suggested. This provides the minimum parasitic effects and reduces area on the chip. Second proposed circuit uses Complementary Pass Transistor Logic (CPTL) structure, which provides complementary outputs. This contributes an alternate circuit for conventional DCVSL structure. The performances of the proposed circuits are examined using Cadence and the model parameters of a 180 nm CMOS process. The simulation results of these two circuits are compared and presented. These circuits are found to be suitable for VLSI implementation.

A LOW POWER AND VARIATION-INSENSITIVE CURRENT-MODE SIGNALING SCHEME

2013 ◽  
Vol 22 (08) ◽  
pp. 1350068
Author(s):  
XINSHENG WANG ◽  
YIZHE HU ◽  
LIANG HAN ◽  
JINGHU LI ◽  
CHENXU WANG ◽  
...  
Keyword(s):  
Low Power ◽  
High Speed ◽  
Current Mode ◽  
Signal Propagation ◽  
Cmos Technology ◽  
Propagation Delay ◽  
Noise Performance ◽  
On Chip ◽  
Variation Tolerance ◽  
Driving Signal

Process and supply variations all have a large influence on current-mode signaling (CMS) circuits, limiting their application on the fields of high-speed low power communication over long on-chip interconnects. A variation-insensitive CMS scheme (CMS-Bias) was offered, employing a particular bias circuit to compensate the effects of variations, and was robust enough against inter-die and intra-die variations. In this paper, we studied in detail the principle of variation tolerance of the CMS circuit and proposed a more suitable bias circuit for it. The CMS-Bias with the proposed bias circuit (CMS-Proposed) can acquire the same variation tolerance but consume less energy, compared with CMS-Bias with the original bias circuit (CMS-Original). Both the CMS schemes were fabricated in 180 nm CMOS technology. Simulation and measured results indicate that the two CMS interconnect circuits have the similar signal propagation delay when driving signal over a 10 mm line, but the CMS-Proposed offers about 9% reduction in energy/bit and 7.2% reduction in energy-delay-product (EDP) over the CMS-Original. Simulation results show that the two CMS schemes only change about 5% in delay when suffering intra-die variations, and have the same robustness against inter-die variations. Both simulation and measurements all show that the proposed bias circuits, employing self-biasing structure, contribute to robustness against supply variations to some extent. Jitter analysis presents the two CMS schemes have the same noise performance.

A Tunable Swing-Reduced Driver in 0.13-μm MTCMOS Technology

2017 ◽  
Vol 26 (11) ◽  
pp. 1750182
Author(s):  
Indrit Myderrizi ◽  
Ali Zeki
Keyword(s):  
Integrated Circuits ◽  
Low Power ◽  
Output Voltage ◽  
High Speed ◽  
Pulse Signal ◽  
Propagation Delay ◽  
Cmos Process ◽  
Down Low ◽  
Voltage Swing ◽  
Output Voltage Swing

With the increase in demand for high-speed and low-power integrated circuits as technology scales down, low-swing signaling circuit techniques are critical for providing high-speed low-power communications. However, existing low-swing circuits comprise complex designs, power issues (static and dynamic), output voltage swing restrictions or nonadjustable voltage swing levels, leading to lower operation speeds and even larger area footprints. In this paper, a tunable swing-reduced driver (SRD) circuit featuring the mentioned design challenges is presented. The SRD enables low-swing signals with fully controllable output voltage swing that is useful to reduce the power dissipation and delay in the signaling paths. Implemented in UMC 0.13-[Formula: see text][Formula: see text]m multi-threshold CMOS process, the SRD achieves 26 ps propagation delay at 200[Formula: see text]mV output swing for a pulse signal input at 1[Formula: see text]GHz. Post-layout simulations of the proposed SRD and a DAC application circuit, incorporating the SRD, operating at 1[Formula: see text]GHz, validate the design.

scholarly journals Performance Analysis of Modified Drain Gating Techniques for Low Power and High Speed Arithmetic Circuits

VLSI Design ◽  
2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Shikha Panwar ◽  
Mayuresh Piske ◽  
Aatreya Vivek Madgula
Keyword(s):  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Room Temperature ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Propagation Delay ◽  
Cmos Circuits ◽  
Output Node ◽  
Critical Sections

This paper presents several high performance and low power techniques for CMOS circuits. In these design methodologies, drain gating technique and its variations are modified by adding an additional NMOS sleep transistor at the output node which helps in faster discharge and thereby providing higher speed. In order to achieve high performance, the proposed design techniques trade power for performance in the delay critical sections of the circuit. Intensive simulations are performed using Cadence Virtuoso in a 45 nm standard CMOS technology at room temperature with supply voltage of 1.2 V. Comparative analysis of the present circuits with standard CMOS circuits shows smaller propagation delay and lesser power consumption.

scholarly journals The Cascade Carry Array Multiplier – A Novel Structure of Digital Unsigned Multipliers for Low-Power Consumption and Ultra-Fast Applications

2019 ◽  
Vol 3 (3) ◽  
pp. 19-27
Author(s):  
Mohsen Sadeghi ◽  
Mahya Zahedi ◽  
Maaruf Ali
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Speed ◽  
Supply Voltage ◽  
Circuit Simulation ◽  
Propagation Delay ◽  
Simulation Software ◽  
Low Power Consumption ◽  
Ultra Low Power ◽  
Novel Structure

This article presents a low power consumption, high speed multiplier, based on a lowest transistor count novel structure when compared with other traditional multipliers. The proposed structure utilizes 4×4-bit adder units, since it is the base structure of digital multipliers. The main merits of this multiplier design are that: it has the least adder unit count; ultra-low power consumption and the fastest propagation delay in comparison with other gate implementations. The figures demonstrate that the proposed structure consumes 32% less power than using the bypassing Ripple Carry Array (RCA) implementation. Moreover, its propagation delay and adder units count are respectively about 31% and 8.5% lower than the implementation using the bypassing RCA multiplier. All of these simulations were carried out using the HSPICE circuit simulation software in 0.18 μm technology at 1.8 V supply voltage. The proposed design is thus highly suitable in low power drain and high-speed arithmetic electronic circuit applications.

scholarly journals High-Speed Wide-Range True-Single-Phase-Clock CMOS Dual Modulus Prescaler

Electronics ◽  
2020 ◽  
Vol 9 (5) ◽  
pp. 725
Author(s):  
Xiaoran Li ◽  
Jian Gao ◽  
Zhiming Chen ◽  
Xinghua Wang
Keyword(s):  
Low Power ◽  
High Speed ◽  
Single Phase ◽  
Logic Gates ◽  
Cmos Technology ◽  
Propagation Delay ◽  
Operating Frequency ◽  
Wide Range ◽  
Measurement Results ◽  
Phase Clock

This manuscript presents two novel low-power high-speed true-single-phase-clock (TSPC) prescalers with division ratios of 2/3 and 4/5, respectively, in a standard 90-nm CMOS technology. The logic gates incorporated between the D-flip-flops (DFFs) of a conventional 2/3 prescaler are modified to reduce the propagation delay and hence increase the maximum operating frequency. The measurement results show that the proposed divide-by-2/3 and divide-by-4/5 prescalers can operate up to 17 GHz and 15.3 GHz, respectively, which increase by 5.4 GHz and 4.3 GHz compared with conventional TSPC prescalers. The power of the proposed divide-by-2/3 prescaler is 0.67 mW and 0.92 mW, and 0.87 mW and 1.06 mW for the proposed divide-by-4/5 prescaler. The chip occupies an area of 20 × 35 μm2 and 20 × 50 μm2 for the proposed divide-by-2/3 and divide-by-4/5 prescalers.

An Ultra-low Power, High SNM, High Speed and High Temperature of 6T-SRAM Cell in 3C-SiC 130 nm CMOS Technology

2020 ◽  
Vol 12 (4) ◽  
pp. 04024-1-04024-4
Author(s):  
D. Berbara ◽  
◽  
M. Abboun Abid ◽  
M. Hebali ◽  
M. Benzohra ◽  
...  
Keyword(s):  
High Temperature ◽  
Low Power ◽  
High Speed ◽  
Cmos Technology ◽  
Ultra Low Power ◽  
Sram Cell
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