scholarly journals Synthesis, Characterization and Antibacterial Application of ZnO Thin films

2021 ◽  
pp. 13-16
Author(s):  
A M Wagh and N U Patil
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Resistivity ◽  
Antibacterial Activity ◽  
Energy Gap ◽  
Spray Pyrolysis Technique ◽  
Diffraction Method ◽  
Nano Particles ◽  
Zno Thin Films ◽  
Zno Film

The objective of this study is to synthesize ZnO nano particles in form thin film on glass substrate and study antibacterial active of such films. ZnO thin films were prepared by spray pyrolysis technique using zinc acetate and isopropyl alcohol as precursor in the temperature range 375̊C to 425̊C. The optical properties of the film were studied on UV/VIS/NIR spectrophotometer. The energy gap of the film is evaluated and it is found to be 3.31 eV. The polycrystalline nature of the ZnO film was confirmed by structural analysis by Xray diffraction method and the grain size is determined. It is found to be 50nm. The electrical resistivity of the film was measured by four probe method at different temperatures and it is found that electrical resistivity varying in the range 103 to 104 Ω–cm. we studied the antibacterial activity of ZnO thin film against gram-negative bacteria. Escherichia coli (E- coli) were used as test micro organisms. It is found that ZnO film enhanced the significant antibacterial activity.

scholarly journals Influence of Annealing on Properties of Spray Deposited ZnO Thin Films

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Kalyani Nadarajah ◽  
Ching Yern Chee ◽  
Chou Yong Tan
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Spray Pyrolysis Technique ◽  
Hexagonal Wurtzite Structure ◽  
Ambient Air ◽  
Zno Thin Films ◽  
Visible Range ◽  
X Ray ◽  
Average Grain Size ◽  
Vis Spectroscopy

Zinc Oxide (ZnO) thin films were deposited on glass substrates via the spray pyrolysis technique. The films were subsequently annealed in ambient air from 300°C to 500°C. The morphology and structural properties of the thin films were studied by field emission scanning electron microscope (FESEM), atomic force microscopy (AFM), and X-ray diffractometry (XRD) techniques. Electrical resistivity of the thin films was measured using a data acquisition unit. The optical properties of the films were characterized by UV-vis spectroscopy and photoluminescence (PL) technique. X-ray diffraction data showed that the films were grown in the (002) direction with a hexagonal wurtzite structure. The average grain size ranged from 15 to 27 nm. Increasing annealing temperatures resulted in larger grain sizes and higher crystallinity, with the surface roughness of annealed films being more than twice if compared to unannealed film. The electrical resistivity of the films decreased with the increasing annealing temperature. The UV and visible band emissions were observed in the photoluminescence spectra, due to exciton and defect-related emissions, respectively. The transmission values of the films were as high as 90% within the visible range (400–700 nm).

scholarly journals Effect of thickness on the optical properties of ZnO thin films prepared by pulsed laser deposition technique (PLD)

2019 ◽  
Vol 15 (32) ◽  
pp. 114-121
Author(s):  
Maysar A. Salim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Film Thickness ◽  
Energy Gap ◽  
Transparent Conducting Oxide ◽  
Zno Thin Films ◽  
Zno Films ◽  
Zno Thin Film ◽  
Optical Energy Gap

Zinc Oxide (ZnO) thin films of different thickness were preparedon ultrasonically cleaned corning glass substrate, by pulsed laserdeposition technique (PLD) at room temperature. Since mostapplication of ZnO thin film are certainly related to its opticalproperties, so the optical properties of ZnO thin film in thewavelength range (300-1100) nm were studied, it was observed thatall ZnO films have high transmittance (˃ 80 %) in the wavelengthregion (400-1100) nm and it increase as the film thickness increase,using the optical transmittance to calculate optical energy gap (Egopt)show that (Egopt) of a direct allowed transition and its value nearlyconstant (~ 3.2 eV) for all film thickness (150, 180, 210, and 240)nm, so Zn0 thin films were used as a transparent conducting oxide(TCO) in various optoelectronic application such as a window in athin film solar cells.

Influence of Carrier Gas Pressure on the Physical Properties of CdO Thin Films

2019 ◽  
Vol 233 (7) ◽  
pp. 913-932
Author(s):  
M. Anitha ◽  
V. Tamilnayagam ◽  
N. Anitha ◽  
Tamiloli Devendhiran ◽  
Keerthika Kumarasamy ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Energy Gap ◽  
Spray Pyrolysis Technique ◽  
Cadmium Oxide ◽  
Emission Spectra ◽  
Gas Pressure ◽  
Sem Images ◽  
Carrier Gas ◽  
Cdo Thin Films

Abstract Conducting cadmium oxide (CdO) thin film samples were deposited on amorphous glass substrates at the optimized substrate temperature (200 °C) as a function of carrier gas pressure (10.8, 12.7, 14.7, 16.7 and 18.6 × 104 N m−2 respectively) by spray pyrolysis technique using nebulizer. XRD results showed that all the CdO thin films were polycrystalline in nature along with cubic structure. The scanning electron microscopy (SEM) images revealed that all the thin films had a sphere like grains without any cracks. The elemental composition of the film is analyzed with EDAX spectrum formed in stochiometric range. Direct energy gap values were found to be had decreased from 2.46 to 2.42 eV as the function of carrier gas pressure had increased from 10.8 to 14.7 × 104 (N m−2) and the energy gap increased further. All the as deposited samples of Cd–O vibration bond (690 cm−1) were confirmed by FTIR spectrum. PL emission spectra revealed that all the CdO thin films exhibit a strong emission (green) peak at 520 nm. High carrier concentration (2.88 × 1019 cm−3), low resistivity (4.76 × 10−3 Ω cm) and high figure of merit (25.0 × 10−3) were observed for 14.7 × 104 (N m−2) carrier gas pressure of CdO thin film.

IMPACT OF N DOPING ON THE PHYSICAL PROPERTIES OF ZnO THIN FILMS

2018 ◽  
Vol 25 (01) ◽  
pp. 1850035 ◽  
Author(s):  
NRIPASREE NARAYANAN ◽  
N. K. DEEPAK
Keyword(s):  
Thin Films ◽  
Energy Gap ◽  
Spray Pyrolysis Technique ◽  
Compositional Analysis ◽  
Optical Transmittance ◽  
Xrd Analysis ◽  
Zno Thin Films ◽  
Optical Energy Gap ◽  
Glass Substrates ◽  
N Doping

Structural, optical and electrical properties of bare and N monodoped ZnO thin films were investigated. The samples were prepared on glass substrates by spray pyrolysis technique. N doping resulted in p type electrical conductivity as evident from the Hall measurement results. XRD analysis confirmed the structural purity of all the films and compositional analysis by energy dispersive X-ray spectroscopy verified the inclusion of N in doped films in addition to Zn and O. Doping resulted in deterioration in crystallinity. Optical transmittance got diminished with doping due to the degradation in crystallinity as well as due to the presence of deep N related defects as evident from the photoluminescence spectra. Optical energy gap red-shifted with doping percentage due to the introduction of impurity levels near the valence band edge within the forbidden gap with acceptor doping.

Melioration of Optical and Electrical Performance of Ga-N Codoped ZnO Thin Films

2018 ◽  
Vol 73 (6) ◽  
pp. 547-553 ◽  
Author(s):  
Nripasree Narayanan ◽  
N. K. Deepak
Keyword(s):  
Thin Films ◽  
Energy Gap ◽  
Spray Pyrolysis Technique ◽  
Hole Concentration ◽  
Optical Transmittance ◽  
Electrical Performance ◽  
Zno Thin Films ◽  
Composition Analysis ◽  
Optical Energy Gap ◽  
X Ray

AbstractTransparent and conducting p-type zinc oxide (ZnO) thin films doped with gallium (Ga) and nitrogen (N) simultaneously were deposited on glass substrates by spray pyrolysis technique. Phase composition analysis by X-ray diffraction confirmed the polycrystallinity of the films with pure ZnO phase. Energy dispersive X-ray analysis showed excellent incorporation of N in the ZnO matrix by means of codoping. The optical transmittance of N monodoped film was poor but got improved with Ga-N codoping and also resulted in the enhancement of optical energy gap. Hole concentration increased with codoping and consequently, lower resistivity and high stability were obtained.

Working Pressure Dependence of Structure and Optical Performance of Zinc Oxide Thin Films by Magnetron Sputtering

2013 ◽  
Vol 734-737 ◽  
pp. 2572-2575 ◽  
Author(s):  
S.B. Chen ◽  
Z.Y. Zhong
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Energy Gap ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Optical Performance ◽  
Optical Energy Gap ◽  
Working Pressure

Zinc oxide (ZnO) thin films were grown by magnetron sputtering onto glass substrates employing a sintered ceramic target and pure argon gas. The influence of working pressure on structure and optical performance of the thin films were studied by the measurements of X-ray diffraction (XRD) patterns and optical transmission spectra. The optical energy gap of the ZnO thin film were calculated according to the Taucs law. The results demonstrate that all the ZnO thin films have preferred orientation along (002) direction. The working pressure affects not only the structure parameters such as lattice constant, strain and stress in the plane of the film, but also the optical transmittance and energy gap of the ZnO thin films. The ZnO thin film deposited at the working pressure of 0.5 Pa exhibits the maximum average visible transmittance of 86.6%, a compressive stress of 1.72×109 Pa, and an optical energy gap of 3.273 eV.

scholarly journals Effects of Thermal Annealing on the Characteristics of High Frequency FBAR Devices

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 397
Author(s):  
Yu-Chen Chang ◽  
Ying-Chung Chen ◽  
Bing-Rui Li ◽  
Wei-Che Shih ◽  
Jyun-Min Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Annealing ◽  
Electromechanical Coupling ◽  
Zno Thin Films ◽  
Electromechanical Coupling Coefficient ◽  
Back Side ◽  
Zno Thin Film ◽  
Frequency Responses ◽  
Sputtering System

In this study, piezoelectric zinc oxide (ZnO) thin film was deposited on the Pt/Ti/SiNx/Si substrate to construct the FBAR device. The Pt/Ti multilayers were deposited on SiNx/Si as the bottom electrode and the Al thin film was deposited on the ZnO piezoelectric layer as the top electrode by a DC sputtering system. The ZnO thin film was deposited onto the Pt thin film by a radio frequency (RF) magnetron sputtering system. The cavity on back side for acoustic reflection of the FBAR device was achieved by KOH solution and reactive ion etching (RIE) processes. The crystalline structures and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The optimized as-deposited ZnO thin films with preferred (002)-orientation were obtained under the sputtering power of 80 W and sputtering pressure of 20 mTorr. The crystalline characteristics of ZnO thin films and the frequency responses of the FBAR devices can be improved by using the rapid thermal annealing (RTA) process. The optimized annealing temperature and annealing time are 400 °C and 10 min, respectively. Finally, the FBAR devices with structure of Al/ZnO/Pt/Ti/SiNx/Si were fabricated. The frequency responses showed that the return loss of the FBAR device with RTA annealing was improved from −24.07 to −34.66 dB, and the electromechanical coupling coefficient (kt2) was improved from 1.73% to 3.02% with the resonance frequency of around 3.4 GHz.

Plasma Pre-Treatment of Polyethylene Terephthalate Substrate Influence on the Properties of ZnO Thin Film

2014 ◽  
Vol 895 ◽  
pp. 41-44
Author(s):  
Seiw Yen Tho ◽  
Kamarulazizi Ibrahim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Polyethylene Terephthalate ◽  
Contact Angle Measurement ◽  
Angle Measurement ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Water Contact ◽  
Pre Treatment ◽  
Pet Substrate

In this work, the influences of plasma pre-treatment on polyethylene terephthalate (PET) substrate to the properties of ZnO thin film have been carried out. ZnO thin films were successfully grown on PET substrate by spin coating method. In order to study the effects of plasma pre-treatment, a comparison of treated and untreated condition was employed. Water contact angle measurement had been carried out for PET wettability study prior to ZnO thin film coating. Morphology study of ZnO thin film was performed by scanning probe microscope (SPM). Besides, optical study of the ZnO thin film was done by using UV-vis spectrophotometer. All the measured results show that plasma pre-treatment of PET substrate plays an important role in enhancing the wettability of PET and optical properties of the ZnO thin films. In conclusion, pre-treatment of PET surface is essential to produce higher quality ZnO thin film on this particular substrate in which would pave the way for the integration of future devices.

scholarly journals Preparation of Glass Plate-Supported Nanostructure ZnO Thin Film Deposited by Sol-Gel Spin-Coating Technique and Its Photocatalytic Degradation to Monoazo Textile Dye

2008 ◽  
Vol 2008 ◽  
pp. 1-5 ◽  
Author(s):  
Mohammad Hossein Habibi ◽  
Mohammad Khaledi Sardashti
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Photocatalytic Degradation ◽  
Spin Coating ◽  
Sol Gel ◽  
Glass Plate ◽  
Zno Thin Films ◽  
Visible Range ◽  
Textile Dye ◽  
Axis Orientation

Glass plate-supported nanostructure ZnO thin films were deposited by sol-gel spin coating. Films were preheated at275∘Cfor 10 minutes and annealed at 350, 450, and550∘Cfor 80 minutes. The ZnO thin films were transparent ca 80–90% in visible range and revealed that absorption edges at about 370 nm. Thec-axis orientation improves and the grain size increases which was indicated by an increase in intensity of the (002) peak at34.4∘in XRD corresponding to the hexagonal ZnO crystal. The photocatalytic degradation of X6G an anionic monoazo dye, in aqueous solutions, was investigated and the effects of some operational parameters such as the number of layer and reusability of ZnO nanostructure thin film were examined. The results showed that the five-layer coated glass surfaces have a very high photocatalytic performance.

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