scholarly journals Forward Current Transport Mechanism of Cu Schottky Barrier Formed on n-type Ge Wafer

2015 ◽  
Vol 16 (3) ◽  
pp. 151-155
Author(s):  
Se Hyun Kim ◽  
Chan Yeong Jung ◽  
Hogyoung Kim ◽  
Yunae Cho ◽  
Dong-Wook Kim
Keyword(s):  
Schottky Barrier ◽  
Transport Mechanism ◽  
Current Transport ◽  
Current Transport Mechanism ◽  
Forward Current

Forward Current Transport Mechanism and Schottky Barrier Characteristics of a Ni/Au Contact on n-GaN

2012 ◽  
Vol 29 (8) ◽  
pp. 087204 ◽  
Author(s):  
Da-Wei Yan ◽  
Zhao-Min Zhu ◽  
Jian-Min Cheng ◽  
Xiao-Feng Gu ◽  
Hai Lu
Keyword(s):  
Schottky Barrier ◽  
Transport Mechanism ◽  
Current Transport ◽  
Current Transport Mechanism ◽  
Forward Current

Current transport mechanism of AlGaN/GaN Schottky barrier diode with fully recessed Schottky anode

2014 ◽  
Vol 54 (1) ◽  
pp. 011001 ◽  
Author(s):  
Yao Yao ◽  
Jian Zhong ◽  
Yue Zheng ◽  
Fan Yang ◽  
Yiqiang Ni ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Transport Mechanism ◽  
Schottky Barrier Diode ◽  
Current Transport ◽  
Current Transport Mechanism

scholarly journals Rectifying Characteristics of Thermally Treated Mo/SiC Schottky Contact

Coatings ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 388
Author(s):  
Jeongsoo Hong ◽  
Ki Hyun Kim ◽  
Kyung Hwan Kim
Keyword(s):  
Schottky Barrier ◽  
Transport Mechanism ◽  
Characteristic Curve ◽  
Schottky Contact ◽  
Current Transport ◽  
Carrier Injection ◽  
Voltage Measurement ◽  
Barrier Heights ◽  
Current Transport Mechanism ◽  
Current Voltage

The rectifying characteristics of a Mo/SiC Schottky contact fabricated by facing targets sputtering system were investigated through current–voltage measurement. The Schottky diode parameters were extracted from the forward current–voltage characteristic curve by the Cheung and Cheung method and the Norde method. The as-deposited Mo/SiC Schottky contacts possessed Schottky barrier heights of 1.17 and 1.22 eV, respectively. The Schottky barrier heights of the diodes were decreased to 1.01 and 0.91 eV after annealing at 400 °C for 30 min. The ideality factor was increased from 1.14 and 1.08 to 1.51 and 1.41, respectively. This implies the presence of non-ideal behaviors due to a current transport mechanism other than ideal thermionic emission, and the non-ideal behaviors increased as a result of excessive thermal annealing. In contrast, only a negligible change was observed in the crystallographic characteristics. This result suggests that the reason for the deviation from the ideal rectifying characteristics of the Mo/SiC Schottky contact through the annealing process was the variation in the current transport mechanism, including recombination, tunneling, and/or minority carrier injection.

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

2015 ◽  
Vol 15 (1) ◽  
pp. 7-15 ◽  
Author(s):  
Zagarzusem Khurelbaatar ◽  
Yeon-Ho Kil ◽  
Kyu-Hwan Shim ◽  
Hyunjin Cho ◽  
Myung-Jong Kim ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Transport Mechanism ◽  
Schottky Barrier Diode ◽  
Current Transport ◽  
Temperature Dependent ◽  
Current Transport Mechanism

Current Transport Mechanism of High-Performance Novel GaN MIS Diode

2021 ◽  
Vol 42 (3) ◽  
pp. 304-307
Author(s):  
Tao Zhang ◽  
Yanni Zhang ◽  
Jincheng Zhang ◽  
Xiangdong Li ◽  
Yueguang Lv ◽  
...  
Keyword(s):  
Transport Mechanism ◽  
High Performance ◽  
Current Transport ◽  
Current Transport Mechanism ◽  
Mis Diode
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