scholarly journals Effect of Ta-Substitution on the Ferroelectric and Piezoelectric Properties of Bi0.5/(Na0.82K0.18)0.5TiO3Ceramics

2011 ◽  
Vol 12 (2) ◽  
pp. 64-67 ◽  
Author(s):  
Nam-Binh Do ◽  
Han-Bok Lee ◽  
Chang-Ho Yoon ◽  
Jin-Kyu Kang ◽  
Jae-Shin Lee ◽  
...  
Keyword(s):  
Piezoelectric Properties ◽  
Ferroelectric And Piezoelectric Properties

Characterization of Nanomechanical, Ferroelectric, and Piezoelectric Properties by Nanoindentation and Piezoresponse Force Microscopy of PbTiO3 Thin Films

2013 ◽  
Vol 52 (40) ◽  
pp. 14328-14334 ◽  
Author(s):  
Juan Ramos-Cano ◽  
Mario Miki-Yoshida ◽  
André Marino Gonçalves ◽  
José Antônio Eiras ◽  
Jesús González-Hernández ◽  
...  
Keyword(s):  
Thin Films ◽  
Piezoelectric Properties ◽  
Piezoresponse Force Microscopy ◽  
Force Microscopy ◽  
Ferroelectric And Piezoelectric Properties

Study on Dielectric and Ferroelectric Properties of Gd-Doped Sr2Bi4Ti5O18 Ceramics

2011 ◽  
Vol 328-330 ◽  
pp. 1131-1134
Author(s):  
Qian Chen ◽  
Zhi Jun Xu ◽  
Rui Qing Chu ◽  
Yong Liu ◽  
Ming Li Chen ◽  
...  
Keyword(s):  
Piezoelectric Properties ◽  
Ferroelectric Properties ◽  
Solid State Reaction Method ◽  
Lead Free ◽  
Structural Ceramics ◽  
Conventional Solid State Reaction ◽  
Reaction Method ◽  
Maximum Value ◽  
Pure Bismuth ◽  
Ferroelectric And Piezoelectric Properties

Lead-free piezoelectric ceramics Sr2Bi4-xGdxTi5O18 were prepared by conventional solid-state reaction method. Pure bismuth layered structural ceramics with uniform gain size were obtained in all samples. The effect of Gd-doping on the dielectric, ferroelectric and piezoelectric properties of Sr2Bi4Ti5O18 ceramics were also investigated. It was found that that Gd3+ dopant gradually decreased the Curie temperature (Tc) with the lower dielectric loss (tand) of SBTi ceramics. In addition, Gd-doping with appropriate content improved the ferroelectric and piezoelectric properties of the SBTi ceramics. The piezoelectric constant (d33) of the Sr2Bi3.9Gd0.1Ti5O18 ceramic reached the maximum value, which is 22 pC/N. The results showed that the Sr2Bi4-xGdxTi5O18 ceramic was a promising lead-free piezoelectric material.

scholarly journals Transferred PMN-PT Thick Film on Conductive Silver Epoxy

Materials ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 1621 ◽  
Author(s):  
Tao Zhang ◽  
Jun Ou-Yang ◽  
Xiaofei Yang ◽  
Benpeng Zhu
Keyword(s):  
Thick Film ◽  
Silicon Substrate ◽  
Chemical Method ◽  
Piezoelectric Properties ◽  
Sol Gel ◽  
Wet Chemical Method ◽  
Chemical Route ◽  
Wet Chemical ◽  
Silver Epoxy ◽  
Ferroelectric And Piezoelectric Properties

Approximately 25 μm Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN-PT) thick film was synthesized based on a sol-gel/composite route. The obtained PMN-PT thick film was successfully transferred from the Silicon substrate to the conductive silver epoxy using a novel wet chemical method. The mechanism of this damage free transfer was explored and analyzed. Compared with the film on Silicon substrate, the transferred one exhibited superior dielectric, ferroelectric and piezoelectric properties. These promising results indicate that transferred PMN-PT thick film possesses the capability for piezoelectric device application, especially for ultrasound transducer fabrication. Most importantly, this chemical route opens a new path for transfer of thick film.

Ferroelectric and piezoelectric properties of highly oriented Pb(Zr,Ti)O3 film grown on Pt/Ti/SiO2/Si substrate using conductive lanthanum nickel nitrate buffer layer

2005 ◽  
Vol 20 (3) ◽  
pp. 726-733 ◽  
Author(s):  
Jong-Jin Choi ◽  
Gun-Tae Park ◽  
Chee-Sung Park ◽  
Hyoun-Ee Kim
Keyword(s):  
Thin Film ◽  
Buffer Layer ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Properties ◽  
Nickel Nitrate ◽  
Si Substrate ◽  
Pzt Thin Film ◽  
Pzt Films ◽  
Lanthanum Nickel ◽  
Ferroelectric And Piezoelectric Properties

The orientation and electrical properties of Pb(Zr,Ti)O3 thin films deposited on a Pt/Ti/SiO2/Si substrate using lanthanum nickel nitrate as a conductive buffer layer were analyzed. The lanthanum nickel nitrate buffer layer was not only electrically conductive but also effective in controlling the texture of the lead zirconate titanate (PZT) thin film. The role of the lanthanum nickel nitrate buffer layer and its effects on the orientation of the PZT thin film were analyzed by x-ray diffraction, electron beam back-scattered diffraction, and scanning electron microscopy. The annealed lanthanum nickel nitrate buffer layer was sufficiently conducting for use in longitudinal electrode configuration devices. The dielectric, ferroelectric, and piezoelectric properties of the highly (100) oriented PZT films grown with the lanthanum nickel nitrate buffer layer were measured and compared with those of (111) and (100) oriented PZT films deposited without a buffer layer.

Ferroelectric Gd-doped ZnO nanostructures: Enhanced dielectric, ferroelectric and piezoelectric properties

2017 ◽  
Vol 202 ◽  
pp. 56-64 ◽  
Author(s):  
Sahil Goel ◽  
Nidhi Sinha ◽  
Harsh Yadav ◽  
Sanjay Godara ◽  
Abhilash J. Joseph ◽  
...  
Keyword(s):  
Piezoelectric Properties ◽  
Zno Nanostructures ◽  
Doped Zno ◽  
Ferroelectric And Piezoelectric Properties
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