Numerical Verification of Thermal Stability Requirements for LISA Inertial Sensor in the Frequency Domain

2003 ◽  
Author(s):  
Marco Molina ◽  
Christian Vettore ◽  
Laura Beretta ◽  
Fabio Nappo ◽  
Federico Pamio ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Frequency Domain ◽  
Inertial Sensor ◽  
Numerical Verification

scholarly journals A MODEL IN FREQUENCY DOMAIN FOR TRANSFORMATION OF FULLY DISPERSIVE NONLINEAR WAVES

2018 ◽  
pp. 60
Author(s):  
Samira Ardani ◽  
James M. Kaihatu
Keyword(s):  
Frequency Domain ◽  
Evolution Equations ◽  
Wave Model ◽  
Multiple Scale ◽  
Transformation Model ◽  
Wave Transformation ◽  
Numerical Verification ◽  
Resonant Interactions ◽  
Dispersive Model ◽  
Mathematical Derivation

In this study, mathematical derivation and numerical verification of a wave transformation model in frequency domain is discussed. This wave model is fully dispersive and nonlinear; and is derived based on the WKB assumptions. Transforming the problem into the frequency domain and using multiple scale analysis in space and perturbation theory, the model is expanded up to second order in wave steepness. This fully dispersive nonlinear wave model is a set of evolution equations which explicitly contains quadratic near-resonant interactions. The comparison between the presented model, the existing fully dispersive model and a nearshore model with different set of laboratory and field data shows that the presented model provides significant improvements particularly at higher frequencies.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Evolution of the microstructure of Cu(Ti)/SiO2 layers annealed in NH3

1995 ◽  
Vol 53 ◽  
pp. 452-453
Author(s):  
J. Liu ◽  
N. D. Theodore ◽  
D. Adams ◽  
S. Russell ◽  
T. L. Alford ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Titanium Nitride ◽  
Large Scale ◽  
Standard Procedure ◽  
Alloy Film ◽  
Electron Beam Evaporation ◽  
Copper Metallization ◽  
Nominal Composition ◽  
Ti Alloy ◽  
Thermally Grown

Copper-based metallization has recently attracted extensive research because of its potential application in ultra-large-scale integration (ULSI) of semiconductor devices. The feasibility of copper metallization is, however, limited due to its thermal stability issues. In order to utilize copper in metallization systems diffusion barriers such as titanium nitride and other refractory materials, have been employed to enhance the thermal stability of copper. Titanium nitride layers can be formed by annealing Cu(Ti) alloy film evaporated on thermally grown SiO2 substrates in an ammonia ambient. We report here the microstructural evolution of Cu(Ti)/SiO2 layers during annealing in NH3 flowing ambient.The Cu(Ti) films used in this experiment were prepared by electron beam evaporation onto thermally grown SiO2 substrates. The nominal composition of the Cu(Ti) alloy was Cu73Ti27. Thermal treatments were conducted in NH3 flowing ambient for 30 minutes at temperatures ranging from 450°C to 650°C. Cross-section TEM specimens were prepared by the standard procedure.

Thermal stability and decomposition of perfluoroalkyl substances on spent granular activated carbon

2020 ◽  
Author(s):  
Feng Xiao ◽  
Bin Yao ◽  
Pavankumar Challa Sasi ◽  
Svetlana Golovko ◽  
Dana Soli ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Activated Carbon ◽  
Granular Activated Carbon ◽  
Perfluoroalkyl Substances

Correction to "The analysis of slug tests in the frequency domain" (WRR 25(11), pp. 2388-2396

1990 ◽  
Vol 26 (8) ◽  
pp. 1863-1863
Author(s):  
Paul Marschall ◽  
Baldur Barczewski
Keyword(s):  
Frequency Domain ◽  
Slug Tests
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