scholarly journals Theoretical Studies on the Effect of Confinement on Quantum Dots Using the Brus Equation

2012 ◽  
Vol 02 (02) ◽  
pp. 96-100 ◽  
Author(s):  
Ephrem O. Chukwuocha ◽  
Michael C. Onyeaju ◽  
Taylor S. T. Harry
Keyword(s):  
Quantum Dots ◽  
Theoretical Studies ◽  
Brus Equation

Theoretical studies of energy states of CdSe/ZnS/CdSe and ZnS/CdSe/ZnS quantum dots with an impurity

2021 ◽  
Vol 274 ◽  
pp. 115489
Author(s):  
Abdolali Rabanian ◽  
Mina Neghabi ◽  
Mehdi Zadsar ◽  
Mostafa Jafari
Keyword(s):  
Quantum Dots ◽  
Theoretical Studies ◽  
Energy States

scholarly journals Theoretical studies of excitons in type II CdSe/CdTe quantum dots

2014 ◽  
Vol 526 ◽  
pp. 012005 ◽  
Author(s):  
Jacek M Miloszewski ◽  
Stanko Tomić ◽  
David Binks
Keyword(s):  
Quantum Dots ◽  
Cdte Quantum Dots ◽  
Theoretical Studies ◽  
Type Ii

scholarly journals Магнитная циркулярная поляризация фотолюминесценции экситонов

2018 ◽  
Vol 60 (8) ◽  
pp. 1503
Author(s):  
Е.Л. Ивченко
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Quantum Wells ◽  
Circular Polarization ◽  
Spectral Lines ◽  
Theoretical Studies ◽  
Two Dimensional ◽  
Bulk Semiconductors ◽  
Polarization Of Luminescence ◽  
Composition Fluctuations

AbstractExperimental and theoretical studies of circular polarization of photoluminescence of excitons (MCPL) in semiconductors placed in an external magnetic field are reviewed. The advantage of the MCPL method is its relative simplicity. In particular, it does not require spectral resolution of the Zeeman sublevels of an exciton and may be applied to a wide class of objects having broad photoluminescence spectral lines or bands: in bulk semiconductors with excitons localized on the defects of the crystal lattice and composition fluctuations, in structures with quantum wells and quantum dots of types I and II, in two-dimensional transition metals dichalcogenides and quantum microcavities. The basic mechanisms of the magnetic circular polarization of luminescence are considered. It is shown that either known mechanisms should be modified or additional mechanisms of the MCPL should be developed to describe the polarized photoluminescence in newly invented nanosystems.

Controlling Lateral Ordering of InGaAs Quantum Dots with Arsenic Background

2006 ◽  
Vol 959 ◽  
Author(s):  
Euclydes Marega ◽  
Ziad Abu Waar ◽  
Mohammad Hussein ◽  
Gregory Salamo
Keyword(s):  
Quantum Dots ◽  
Surface Structure ◽  
Surface Properties ◽  
Diffusion Mechanism ◽  
Gaas Surface ◽  
Theoretical Studies ◽  
Growth Environment ◽  
Lateral Ordering ◽  
Experimental And Theoretical Studies ◽  
And Diffusion

ABSTRACTWe present in this work a method to control lateral ordering of In0.4Ga0.6As quantum dots (QDs) using the surface anisotropic and the growth environment. We have shown experimentally that using As2 molecules instead of As4 as a background flux is promising to control the diffusion of adatoms in away to make it possible to control the ordering of In0.4Ga0.6As QDs together with the GaAs surface properties specially for GaAs (100) surfaces. For GaAs (n11)B surfaces the As4 provides a better two dimension ordering than the As2 environment. Our results are consistent with reported experimental and theoretical studies on surface structure and diffusion mechanism over GaAs surface.

Chitosan/P3HT biohybrid films as polymer matrices for the in‐situ synthesis of CdSe quantum dots. Experimental and theoretical studies

2020 ◽  
Vol 137 (36) ◽  
pp. 49075 ◽  
Author(s):  
Viviana Moreno‐Serna ◽  
Maximiliano Méndez‐López ◽  
Alejandro Vásquez‐Espinal ◽  
Cesar Saldías ◽  
Ángel Leiva
Keyword(s):  
Quantum Dots ◽  
In Situ Synthesis ◽  
Polymer Matrices ◽  
Theoretical Studies ◽  
Cdse Quantum Dots ◽  
Experimental And Theoretical Studies

Isotropic Lateral Ordering of III-V Quantum Dots Over GaAs (001) By Self-Assembly

2006 ◽  
Vol 959 ◽  
Author(s):  
Mohammad Lutfi Hussein ◽  
Euclydes Marega ◽  
Gregory Salamo
Keyword(s):  
Quantum Dots ◽  
Surface Structure ◽  
Self Assembly ◽  
Diffusion Mechanism ◽  
Theoretical Studies ◽  
Growth Environment ◽  
Lateral Ordering ◽  
Experimental And Theoretical Studies ◽  
And Diffusion

ABSTRACTLateral ordering of InGaAs quantum dots over GaAs (001) has been achieved in earlier reports resembling anisotropic pattern. We present in this letter a method of breaking the anisotropy of ordered QDs by changing the growth environment. We do show experimentally that using As2 molecules instead of As4 as a background flux is effective in controlling the diffusion of Ga adatoms in away to make it possible to produce isotropic ordering of InGaAs QDs over GaAs (001). Our results are consistent with reported experimental and theoretical studies on surface structure and diffusion mechanism over GaAs.

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