scholarly journals Theoretical Study of Electronic Transmission in Resonant Tunneling Diodes Based on GaAs/AlGaAs Double Barriers under Bias Voltage

2014 ◽  
Vol 04 (03) ◽  
pp. 39-45 ◽  
Author(s):  
Shaffa Abdullah Almansour ◽  
Dakhlaoui Hassen
1996 ◽  
Vol 35 (Part 1, No. 8) ◽  
pp. 4232-4237
Author(s):  
Nobuya Machida ◽  
Kazuhito Furuya ◽  
Mike Gault

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.


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