scholarly journals Boron Nitride Nanostructured: Synthesis, Characterization and Potential Use in Cosmetics

2013 ◽  
Vol 04 (01) ◽  
pp. 22-28 ◽  
Author(s):  
Líliam Márcia Silva Ansaloni ◽  
Edésia Martins Barros de Sousa
Keyword(s):  
Boron Nitride ◽  
Potential Use

scholarly journals First-Principle Study of Rh-Doped Nitrogen Vacancy Boron Nitride Monolayer for Scavenging and Detecting SF6 Decomposition Products

Polymers ◽  
2021 ◽  
Vol 13 (20) ◽  
pp. 3507
Author(s):  
Zhen Shi ◽  
Sheng-Yuan Xia
Keyword(s):  
Boron Nitride ◽  
Sulfur Hexafluoride ◽  
Nitrogen Vacancy ◽  
First Principle ◽  
Density Of State ◽  
Decomposition Products ◽  
Status Assessment ◽  
Sf6 Decomposition ◽  
Computational Processes ◽  
Potential Use

The scavenging and detection of sulfur hexafluoride (SF6) decomposition products (SO2, H2S, SO2F2, SOF2) critically matters to the stable and safe operation of gas-insulated switchgear (GIS) equipment. In this paper, the Rh-doped nitrogen vacancy boron nitride monolayer (Rh-VNBN) is proposed as a gas scavenger and sensor for the above products. The computational processes are applied to investigate the configurations, adsorption and sensing processes, and electronic properties in the gas/Rh-VNBN systems based on the first-principle calculations. The binding energy (Eb) of the Rh-VNBN reaches −8.437 eV, while the adsorption energy (Ead) and band gap (BG) indicate that Rh-VNBN exhibits outstanding adsorption and sensing capabilities. The density of state (DOS) analysis further explains the mechanisms of adsorption and sensing, demonstrating the potential use of Rh-VNBN in sensors and scavengers of SF6 decomposition products. This study is meaningful as it explores new gas scavengers and sensors of SF6 decomposition products to allow the operational status assessment of GIS equipment.

scholarly journals One-dimensional hexagonal boron nitride conducting channel

2020 ◽  
Vol 6 (10) ◽  
pp. eaay4958 ◽  
Author(s):  
Hyo Ju Park ◽  
Janghwan Cha ◽  
Min Choi ◽  
Jung Hwa Kim ◽  
Roland Yingjie Tay ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
2D Materials ◽  
Electronic Devices ◽  
Chemical Vapor ◽  
Conducting Channel ◽  
Twin Boundaries ◽  
One Dimensional ◽  
Potential Use

Hexagonal boron nitride (hBN) is an insulating two-dimensional (2D) material with a large bandgap. Although known for its interfacing with other 2D materials and structural similarities to graphene, the potential use of hBN in 2D electronics is limited by its insulating nature. Here, we report atomically sharp twin boundaries at AA′/AB stacking boundaries in chemical vapor deposition–synthesized few-layer hBN. We find that the twin boundary is composed of a 6′6′ configuration, showing conducting feature with a zero bandgap. Furthermore, the formation mechanism of the atomically sharp twin boundaries is suggested by an analogy with stacking combinations of AA′/AB based on the observations of extended Klein edges at the layer boundaries of AB-stacked hBN. The atomically sharp AA′/AB stacking boundary is promising as an ultimate 1D electron channel embedded in insulating pristine hBN. This study will provide insights into the fabrication of single-hBN electronic devices.

scholarly journals Chemical vapor deposition of sp2-boron nitride films on Al2O3 (0001), (11𝟐0), (1𝟏02) and (10𝟏0) substrates

2021 ◽  
Author(s):  
Sachin Sharma ◽  
Laurent Souqui ◽  
Henrik Pedersen ◽  
Hans Högberg
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Crystalline Films ◽  
Boron Nitride Films ◽  
Potential Use

Thin films of boron nitride in its sp2-hybridized form (sp2-BN) have potential use in UV-devices and dielectrics. Here, we explore chemical vapor deposition (CVD) of sp2-BN on various cuts of sapphire; Al2O3(112̅0), Al2O3(11̅02), Al2O3(11̅00) and Al2O3 (0001) using two CVD processes with different boron precursors; triethylborane (TEB) and trimethylborane (TMB). Fourier transform infrared spectroscopy (FTIR) showed that sp2-BN grows on all the sapphire substrates, using X-ray diffraction (XRD), 2θ/ω diffractograms showed that only Al2O3(112̅0) and Al2O3(0001) renders crystalline films and using phi(ɸ)-scans the growth of rhombohedral polytype (r-BN) films on these substrates is confirmed. These films are found to be epitaxially grown on an AlN interlayer with a higher crystalline quality for the films grown on the Al2O3(112̅0) substrate which is determined using omega(ω)-scans. Our study suggests that Al2O3(112̅0) is the most favorable sapphire substrate to realize the envisioned applications of r-BN films.

The growth of mica polytypes as studied by conventional and high-resolution TEM

1983 ◽  
Vol 41 ◽  
pp. 174-177
Author(s):  
A. Baronnet ◽  
M. Amouric
Keyword(s):  
Water Pressure ◽  
Point Of View ◽  
Temperature Fields ◽  
Natural Occurrence ◽  
Growth Mechanisms ◽  
Long Period ◽  
High Resolution Tem ◽  
Layer Stacking ◽  
Experimental Works ◽  
Potential Use

The origin of mica polytypes has long been a challenging problem for crystal- lographers, mineralogists and petrologists. From the petrological point of view, interest in this field arose from the potential use of layer stacking data to furnish further informations about equilibrium and/or kinetic conditions prevailing during the crystallization of the widespread mica-bearing rocks. From the compilation of previous experimental works dealing with the occurrence domains of the various mica "polymorphs" (1Mr, 1M, 2M1, 2M2 and 3T) within water-pressure vs temperature fields, it became clear that most of these modifications should be considered as metastable for a fixed mica species. Furthermore, the natural occurrence of long-period (or complex) polytypes could not be accounted for by phase considerations. This highlighted the need of a more detailed kinetic approach of the problem and, in particular, of the role growth mechanisms of basal faces could play in this crystallographic phenomenon.

Development of Crystallinity in Turbostratic Boron Nitride Derived from Polymeric Precursors

1991 ◽  
Vol 49 ◽  
pp. 954-955
Author(s):  
X. Qiu ◽  
A. K. Datye ◽  
T. T. Borek ◽  
R. T. Paine
Keyword(s):  
Thermal Treatment ◽  
Boron Nitride ◽  
Diffraction Pattern ◽  
Polymeric Precursors ◽  
Polymer Precursors ◽  
Diffuse Ring

Boron nitride derived from polymer precursors is of great interest for applications such as fibers, coatings and novel forms such as aerogels. The BN is prepared by the polymerization of functionalized borazine and thermal treatment in nitrogen at 1200°C. The BN powders obtained by this route are invariably trubostratic wherein the sheets of hexagonal BN are randomly oriented to yield the so-called turbostratic modification. Fib 1a and 1b show images of BN powder with the corresponding diffraction pattern in fig. 1c. The (0002) reflection from BN is seen as a diffuse ring with occational spots that come from crystals of BN such as those shown in fig. 1b. The (0002) lattice fringes of BN seen in these powders are the most characteristic indication of the crystallinity of the BN.

An atomic-resolution microscope study of Al contracts on GaAs

1986 ◽  
Vol 44 ◽  
pp. 726-727
Author(s):  
Z. Liliental-Weber ◽  
C. Nelson ◽  
R. Ludeke ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
High Speed ◽  
Schottky Contacts ◽  
Detailed Knowledge ◽  
The Past ◽  
Semiconductor Interfaces ◽  
Deposited Metal ◽  
Microwave Applications ◽  
Free Interfaces ◽  
Potential Use

The properties of metal/semiconductor interfaces have received considerable attention over the past few years, and the Al/GaAs system is of special interest because of its potential use in high-speed logic integrated optics, and microwave applications. For such materials a detailed knowledge of the geometric and electronic structure of the interface is fundamental to an understanding of the electrical properties of the contact. It is well known that the properties of Schottky contacts are established within a few atomic layers of the deposited metal. Therefore surface contamination can play a significant role. A method for fabricating contamination-free interfaces is absolutely necessary for reproducible properties, and molecularbeam epitaxy (MBE) offers such advantages for in-situ metal deposition under UHV conditions

Structural relationships in the synthesis of cubic boron nitride thin films by ion-assisted deposition

1994 ◽  
Vol 52 ◽  
pp. 638-639
Author(s):  
D. L. Medlin ◽  
T. A. Friedmann ◽  
P. B. Mirkarimi ◽  
M. J. Mills ◽  
K. F. McCarty
Keyword(s):  
Boron Nitride ◽  
Ion Irradiation ◽  
Cubic Boron Nitride ◽  
Film Stress ◽  
Bonded Phases ◽  
Structural Relationships ◽  
Precursor Material ◽  
Pressure Synthesis ◽  
Microstructure Of The Material

The allotropes of boron nitride include two sp2-bonded phases with hexagonal and rhombohedral structures (hBN and rBN) and two sp3-bonded phases with cubic (zincblende) and hexagonal (wurtzitic) structures (cBN and wBN) (Fig. 1). Although cBN is synthesized in bulk form by conversion of hBN at high temperatures and pressures, low-pressure synthesis of cBN as a thin film is more difficult and succeeds only when the growing film is simultaneously irradiated with a high flux of ions. Only sp2-bonded material, which generally has a disordered, turbostratic microstructure (tBN), will form in the absence of ion-irradiation. The mechanistic role of the irradiation is not well understood, but recent work suggests that ion-induced compressive film stress may induce the transformation to cBN.Typically, BN films are deposited at temperatures less than 1000°C, a regime for which the structure of the sp2-bonded precursor material dictates the phase and microstructure of the material that forms from conventional (bulk) high pressure treatment.

Molecular insights on the dynamic stability of peptide nucleic acid functionalized carbon and boron nitride nanotubes

2021 ◽  
Vol 23 (1) ◽  
pp. 219-228
Author(s):  
Nabanita Saikia ◽  
Mohamed Taha ◽  
Ravindra Pandey
Keyword(s):  
Nucleic Acid ◽  
Boron Nitride ◽  
Nucleic Acids ◽  
Dynamic Stability ◽  
Peptide Nucleic Acid ◽  
Rational Design ◽  
Peptide Nucleic Acids ◽  
Boron Nitride Nanotubes ◽  
Molecular Hybrids ◽  
Single Wall Nanotubes

The rational design of self-assembled nanobio-molecular hybrids of peptide nucleic acids with single-wall nanotubes rely on understanding how biomolecules recognize and mediate intermolecular interactions with the nanomaterial's surface.

The potential use of short chain peptides in parenteral nutrition

1985 ◽  
Vol 4 ◽  
pp. 116-123 ◽  
Author(s):  
P STEHLE ◽  
S ALBERS ◽  
I AMBERGER ◽  
P PFAENDER ◽  
P FURST
Keyword(s):  
Parenteral Nutrition ◽  
Short Chain ◽  
Potential Use
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