scholarly journals Development of Nanostructured Antireflection Coatings for EO/IR Sensor and Solar Cell Applications

2012 ◽  
Vol 03 (09) ◽  
pp. 633-639 ◽  
Author(s):  
Ashok K. Sood ◽  
Adam W. Sood ◽  
Roger E. Welser ◽  
Gopal G. Pethuraja ◽  
Yash R. Puri ◽  
...  
Keyword(s):  
Solar Cell ◽  
Antireflection Coatings ◽  
Ir Sensor

Development of large area nanostructured antireflection coatings for EO/IR sensor applications

2015 ◽  
Author(s):  
Ashok K. Sood ◽  
Gopal Pethuraja ◽  
Roger E. Welser ◽  
Yash R. Puri ◽  
Nibir K. Dhar ◽  
...  
Keyword(s):  
Antireflection Coatings ◽  
Large Area ◽  
Sensor Applications ◽  
Ir Sensor

scholarly journals Improvement of short circuit current of mono crystalline silicon solar cells

2013 ◽  
Vol 16 (1) ◽  
pp. 48-56
Author(s):  
Vu Ngoc Hoang ◽  
Linh Ngoc Tran ◽  
Lan Truong ◽  
Khoa Thanh Nhat Phan ◽  
Chien Mau Dang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Indium Tin Oxide ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Front Surface ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Crystalline Silicon Solar Cell ◽  
Antireflection Coatings

In this report we present series of experiments during which the short circuit current of mono crystalline silicon solar cell was improved step by step so as a consequence the efficiency was increased. At first, the front contact of solar cell was optimized to reduce the shadow loss and the series resistance. Then surface treatments were prepared by TMAH solution to reduce the total light reflectance and to improve the light trapping effect. Finally, antireflection coatings were deposited to passivate the front surface either by silicon nitride thin layer or to increase the collection probability by indium tin oxide layer, and to reduce the reflectance of light. As a result, solar cells of about 13% have been obtained, with the average open circuit voltage Voc about 527mV, with the fill factor about 68% and the short circuit current about 7.92 mA/cm2 under the irradiation density of 21 mW/cm2.

Antireflection with Multilayer Structure Used on Silicon Solar Cell

2011 ◽  
Vol 66-68 ◽  
pp. 1-4
Author(s):  
Wen Liang Wang ◽  
Xiao Hong Rong
Keyword(s):  
Solar Cell ◽  
Multilayer Structure ◽  
Silicon Solar Cell ◽  
Film Theory ◽  
Antireflection Coating ◽  
Silicon Solar Cells ◽  
Wide Angle ◽  
Antireflection Coatings ◽  
Conversion Efficiencies ◽  
Very High

The refractive index of silicon material is very high, and antireflection coatings are widely used to improve conversion efficiencies of silicon solar cells. An ideal antireflection structure should lead to zero reflection loss on its surfaces over an extended solar spectral range for all angles of incidence. Based on optical thin film theory, a multilayer structure are adopted as initial stack, and with the aid of conjugate graduate optimized method, a broadband and wide-angle antireflection is designed for using on silicon solar cell. In our design, the incident angles of antireflection coating are considered from to , working wavelength ranges are considered from 400nm to 1200nm. Within these ranges, the design results show that it can reduce residual reflection evidently in theory.

Development of nanostructure based antireflection coatings for EO/IR sensor applications

2012 ◽  
Author(s):  
Ashok K. Sood ◽  
Roger E. Welser ◽  
Adam W. Sood ◽  
Yash R. Puri ◽  
David Poxson ◽  
...  
Keyword(s):  
Antireflection Coatings ◽  
Sensor Applications ◽  
Ir Sensor

scholarly journals Selection of Materials for Double Layer Antireflection Coating of Silicon Solar Cell

2021 ◽  
Vol 9 (10) ◽  
pp. 1327-1331
Keyword(s):  
Solar Cell ◽  
Double Layer ◽  
Silicon Solar Cell ◽  
Antireflection Coating ◽  
Antireflection Coatings ◽  
Electrical Parameters ◽  
Wide Range ◽  
Cell Simulation ◽  
Select Material ◽  
Selection Of

In present work an attempt has been made to select material to design double layer antireflection coatings (DLARC) for silicon solar cell, theoretically. In this regard, silicon nitride (Si3N4) is used along with MgF2 and SiO2 to design DLARC to achieve zero reflectance over wide range of spectra. Reflection spectra for DLARC systems of MgF2/Si3N4 and SiO2/Si3N4 have been evaluated numerically using transfer matrix method (TMM). Further, reflectance for MgF2/Si3N4 is investigated at various monitoring wavelengths (o = 550, 600, 650 and 700 nm). Calculated reflectance has been used in PC1D simulator to study the effect of double layer antireflection coating on optical and electrical parameters of silicon solar cell. Simulation results shows, reduction in reflectance form > 30% down to zero in the wavelength range 500 – 700 nm with conversion efficiency 21.33% at 600 nm for MgF2/Si3N4.

Nanostructre based antireflection coatings for EO/IR sensor applications

2011 ◽  
Author(s):  
Ashok K. Sood ◽  
Roger E. Welser ◽  
Adam W. Sood ◽  
E. James Egerton ◽  
Yash R. Puri ◽  
...  
Keyword(s):  
Antireflection Coatings ◽  
Sensor Applications ◽  
Ir Sensor

Development of nanostructured antireflection coatings for EO/IR sensor applications

2016 ◽  
Author(s):  
Gopal G. Pethuraja ◽  
Roger E. Welser ◽  
Ashok K. Sood ◽  
Harry Efstathiadis ◽  
Pradeep Haldar ◽  
...  
Keyword(s):  
Antireflection Coatings ◽  
Sensor Applications ◽  
Ir Sensor
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