scholarly journals Low Temperature Electrical Transport in Double Layered CMR Manganite La<sub>1.2</sub>Sr<sub>1.4</sub>Ba<sub>0.4</sub>Mn<sub>2</sub>O<sub>7</sub>

2012 ◽  
Vol 02 (04) ◽  
pp. 49-52 ◽  
Author(s):  
Y.S. Reddy ◽  
P. Kistaiah ◽  
C. Vishnuvardhan Reddy
Keyword(s):  
Low Temperature ◽  
Electrical Transport ◽  
Cmr Manganite

scholarly journals Superconductivity and low temperature electrical transport in B-doped CVD nanocrystalline diamond

2006 ◽  
Vol 7 (sup1) ◽  
pp. S41-S44 ◽  
Author(s):  
Milos Nesladek ◽  
Jiri J. J. Mares ◽  
Dominique Tromson ◽  
Christine Mer ◽  
Philippe Bergonzo ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electrical Transport ◽  
Nanocrystalline Diamond

scholarly journals Thickness dependent transition from the 1T′ to Weyl semimetal phase in ultrathin MoTe2: electrical transport, noise and Raman studies

Nanoscale ◽  
2020 ◽  
Vol 12 (15) ◽  
pp. 8371-8378 ◽  
Author(s):  
Manabendra Kuiri ◽  
Subhadip Das ◽  
D. V. S. Muthu ◽  
Anindya Das ◽  
A. K. Sood
Keyword(s):  
Low Temperature ◽  
Electrical Transport ◽  
Electron Interaction ◽  
Weyl Semimetal ◽  
Clear Signature

The resistivity of the semiconducting ultra-thin 1T′-MoTe2 shows a clear signature of temperature induced transition to Weyl semimetallic Td phase. Resistivity upturn at low temperature (∼20 K) confirms electron–electron interaction physics at the Weyl nodes.

Low temperature thermopower and electrical transport in misfit Ca3Co4O9with elongatedc-axis

2008 ◽  
Vol 41 (8) ◽  
pp. 085414 ◽  
Author(s):  
S Bhattacharya ◽  
S Rayaprol ◽  
A Singh ◽  
Anjana Dogra ◽  
C Thinaharan ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electrical Transport

Morphology and Low Temperature Electrical Transport in Heteroepitaxial Indium Nitride Films

1992 ◽  
Vol 263 ◽  
Author(s):  
W. A. Bryden ◽  
S. A. Ecelberger ◽  
T. J. Kistenmacher
Keyword(s):  
Low Temperature ◽  
Temperature Dependence ◽  
Electrical Transport ◽  
Deposition Temperature ◽  
Amorphous Materials ◽  
Indium Nitride ◽  
Electrical Contact ◽  
Rf Magnetron Sputtering ◽  
Electrical Mobility ◽  
Reactive Rf Magnetron Sputtering

ABSTRACTThe correlation of low temperature electrical transport with the evolution of heteroepitaxy and morphology for sputtered indium nitride thin films has been studied. A series of indium nitride films were deposited at temperatures ranging from 50 -650 °C by reactive rf magnetron sputtering onto the (00.1) face of sapphire. Above 350 °C, a transition occurs from a continuous morphology, in which grains are in intimate electrical contact, to an open, porous morphology with poor electrical contact. This transition in morphology deeply affects the electrical transport of the semiconductor. At low deposition temperature, the electrical transport is dominated by the relatively weak intergrain scattering leading to films with moderate mobility. As the deposition temperature is raised, the increasingly porous nature of the film leads to a deterioration in electrical mobility. It is proposed here that the relevant physics of these films is analogous to that for granular solids with a distribution of electrical connectivities that suggests a scattering potential dominated by disorder. In fact, the temperature dependence of the resistivity is found to be analogous to that observed in disordered and amorphous materials. In particular, the resistivity is characterized by: 1) A very weak temperature dependence; 2) The observation of a resistance minimum; and, 3) A steep rise in the low temperature (<4K) resistivity that follows a T1/ dependence.

Erratum: “Low-temperature electrical transport in B-doped ultrananocrystalline diamond film” [Appl. Phys. Lett. 104, 182602 (2014)]

2014 ◽  
Vol 104 (22) ◽  
pp. 229901
Author(s):  
Lin Li ◽  
Jing Zhao ◽  
Zhaosheng Hu ◽  
Baogang Quan ◽  
Junjie Li ◽  
...  
Keyword(s):  
Low Temperature ◽  
Diamond Film ◽  
Electrical Transport ◽  
Ultrananocrystalline Diamond
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