scholarly journals Synchrotron-Infrared Microscopy Analysis of Amyloid Fibrils Irradiated by Mid-Infrared Free-Electron Laser

2014 ◽  
Vol 05 (06) ◽  
pp. 384-394 ◽  
Author(s):  
Takayasu Kawasaki ◽  
Toyonari Yaji ◽  
Takayuki Imai ◽  
Toshiaki Ohta ◽  
Koichi Tsukiyama
Keyword(s):  
Free Electron ◽  
Free Electron Laser ◽  
Amyloid Fibrils ◽  
Infrared Microscopy ◽  
Mid Infrared ◽  
Microscopy Analysis

scholarly journals Two - Color Mid-Infrared Spectroscopy of Isoelectronic Centers in Silicon

2003 ◽  
Vol 770 ◽  
Author(s):  
N.Q. Vinh ◽  
T. Gregorkiewicz
Keyword(s):  
Excited States ◽  
Free Electron ◽  
Free Electron Laser ◽  
Materials Science ◽  
Time Resolved ◽  
Mid Infrared ◽  
Semiconductor Physics ◽  
Open Questions ◽  
Time Resolved Photoluminescence ◽  
Tunable Source

AbstractOne of the open questions in semiconductor physics is the origin of the small splittings of the excited states of bound excitons in silicon. A free electron laser as a tunable source of the mid-infrared radiation (MIR) can be used to investigate such splittings of the excited states of optical centers created by transition metal dopants in silicon. In the current study, the photoluminescence from silver and copper doped silicon is investigated by two color spectroscopy in the visible and the MIR. It is shown the PL due recombination of exciton bound to Ag and Cu is quenched upon application of the MIR beam. The time-resolved photoluminescence measurements and the quenching effects of these bands are presented. By scanning the wavelength of the free-electron laser ionization spectra of relevant traps involved in photoluminescence are obtained. The formation and dissociation of the bound excitons, and the small splittings of the effective-mass excited states are discussed. The applied experimental method allows correlation of DLTS data on trapping centers to specific channels of radiative recombination. It can be applied for spectroscopic analysis in materials science of semicondutors.

scholarly journals Wavelength Dependence of Poly(p-hydroxystyrene) Ablation by Mid-Infrared Free-Electron Laser

2019 ◽  
Vol 32 (2) ◽  
pp. 189-193
Author(s):  
Minoru Toriumi ◽  
Takayasu Kawasaki ◽  
Mitsunori Araki ◽  
Takayuki Imai ◽  
Koichi Tsukiyama
Keyword(s):  
Free Electron ◽  
Free Electron Laser ◽  
Wavelength Dependence ◽  
Mid Infrared

Gelatin ablation wavelength dependency in the range of 5.6–6.7 µm using a mid-infrared Free Electron Laser

2003 ◽  
pp. 564-568
Author(s):  
Manabu Heya ◽  
Yuko Fukami ◽  
Hiroyuki Nagats ◽  
Yuji Nishida ◽  
Kunio Awazu
Keyword(s):  
Free Electron ◽  
Free Electron Laser ◽  
Mid Infrared

scholarly journals Effect of Mid-infrared Free-Electron Laser Irradiation on Refolding of Amyloid-Like Fibrils of Lysozyme into Native Form

2012 ◽  
Vol 31 (8) ◽  
pp. 710-716 ◽  
Author(s):  
Takayasu Kawasaki ◽  
Jun Fujioka ◽  
Takayuki Imai ◽  
Koichi Tsukiyama
Keyword(s):  
Laser Irradiation ◽  
Free Electron ◽  
Free Electron Laser ◽  
Native Form ◽  
Mid Infrared

The Radiation Beamline of Novosibirsk Free-Electron Laser Facility Operating in Terahertz, Far-Infrared, and Mid-Infrared Ranges

2020 ◽  
Vol 10 (6) ◽  
pp. 634-646
Author(s):  
Vitaly V. Kubarev ◽  
Gennady I. Sozinov ◽  
Mikhail A. Scheglov ◽  
Alexander V. Vodopyanov ◽  
Alexander V. Sidorov ◽  
...  
Keyword(s):  
Free Electron ◽  
Free Electron Laser ◽  
Far Infrared ◽  
Mid Infrared ◽  
Laser Facility

scholarly journals Mode-selective phonon excitation in gallium nitride using mid-infrared free-electron laser

2017 ◽  
Vol 56 (2) ◽  
pp. 022701 ◽  
Author(s):  
Muneyuki Kagaya ◽  
Kyohei Yoshida ◽  
Heishun Zen ◽  
Kan Hachiya ◽  
Takashi Sagawa ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Free Electron ◽  
Free Electron Laser ◽  
Mid Infrared ◽  
Phonon Excitation
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