Effect of the Deposition Temperature on the Transmittance & Electrical Conductivity of In1.6Zn0.2Sn0.2O3-δThin Films Prepared by RF-magnetron Sputtering

2012 ◽  
Vol 49 (6) ◽  
pp. 663-668 ◽  
Author(s):  
Han Seo ◽  
Mi-Jung Ji ◽  
Yong-Tea An ◽  
Byeong-Kwon Ju ◽  
Byung-Hyun Choi
Keyword(s):  
Electrical Conductivity ◽  
Magnetron Sputtering ◽  
Deposition Temperature ◽  
Rf Magnetron Sputtering

scholarly journals Residual Oxygen Effects on the Properties of MoS2 Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1183
Author(s):  
Peiyu Wang ◽  
Xin Wang ◽  
Fengyin Tan ◽  
Ronghua Zhang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Energy Dispersive Spectrometer ◽  
Rf Magnetron Sputtering ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Oxygen Atoms

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.

Effect of Temperature on the Optical and Morphological Properties of Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering

2015 ◽  
Vol 1115 ◽  
pp. 422-425
Author(s):  
Souad A.M. Al-Bat’hi ◽  
Maizatulnisa Othman
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Deposition Temperature ◽  
Rf Magnetron Sputtering ◽  
Morphological Properties ◽  
Zno Thin Films ◽  
Effect Of Temperature

This investigation deals with the effect of temperature on the optical and morphological properties of Zinc Oxide thin films prepared by radio-Frequency (RF) magnetron sputtering technique. In the present work, zinc oxide (ZnO) thin films have been deposited on glass substrates from 50°C to 300°C by radio frequency magnetron sputtering. The effects of deposition temperature on the crystallization behaviour and optical properties of the films have been studied. The thin films were characterized using Ultraviolet Visible Spectroscopy (UV-VIS), Field Emission Scanning Electron Microscopy (FESEM) and X-ray Diffraction Analysis (XRD). From the UV-VIS testing, the average transmission percentage of the films is between 80-95% for all deposition temperatures meanwhile the energy gap of ZnO thin films varies from 3.26 eV to 3.35 eV which is not much different from the theoretical value. Also, the grain size is getting smaller from 3.886nm, 3.216nm, 3.119nm and 3.079nm with respect to the increasing deposition temperature 50°C, 100°C, 200°C and 300°C respectively whereas the average grain size per intercept value is increasing. The patterns of the peak were about the same for all deposition temperature where the thin films have polycrystalline hexagonal wurtzite structure with the orientation perpendicular (002) to the substrate surface (c-axis orientation) at 34.5(2θ).

Structural and Optical Properties of Nickel-Doped Zinc Oxide Thin Film on Nickel Seed Layer Deposited by RF Magnetron Sputtering Technique

2014 ◽  
Vol 895 ◽  
pp. 3-7 ◽  
Author(s):  
M. Mazwan ◽  
A. Shuhaimi ◽  
M. Sobri ◽  
K.M. Hakim ◽  
N. Ameera ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Flow Rate ◽  
Seed Layer ◽  
Deposition Temperature ◽  
Rf Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Flow Rate Ratio ◽  
Doped Zno

Nickel (Ni)-doped zinc oxide (ZnO) layers were deposited simultaneously by radio frequency (RF) magnetron sputtering from a Ni and ZnO target. A Ni seed layer was used as catalyst prior to the deposition of Ni-doped ZnO. The Ni seed layer was grown with 15 sccm of Ar flow rate while the Ni-doped ZnO was grown with mixture of Ar:O2at 25:5 sccm gas flow rate ratio. The deposition pressure is 5 mTorr for both Ni seed layer and Ni-doped ZnO layer. This paper studies the influence of deposition temperature to the Ni seed layer and Ni-doped ZnO layer at temperature range from room temperature (RT) until 500°C with an increment of every 100°C. The sample was characterized using field emission scanning electron microscopy (FESEM), x-ray diffraction (XRD) and UV visible spectroscopy (UV-vis) to determine the structural, crystallinity and optical properties of the deposited layer. FESEM surface analysis shows that uniformity of the nanocolumns is improved when deposition temperature is increased. The transmittance of the deposited nanocolumns was improved when temperatures are increased to 500°C.

Electrical conductivity of Sc-doped TiO2thin film prepared by RF magnetron sputtering

2014 ◽  
Vol 53 (6S) ◽  
pp. 06JG03 ◽  
Author(s):  
Tomohiro Inoue ◽  
Teppei Okumura ◽  
Yuichi Shimazu ◽  
Enju Sakai ◽  
Hiroshi Kumigashira ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering

A Study of the In Situ Epitaxial Growth of the 123 Ybco Films from a Stoichiometric Target by Rf Magnetron Sputtering

1989 ◽  
Vol 169 ◽  
Author(s):  
R. L. Meng ◽  
Y. Q. Wang ◽  
Y. Y. Sun ◽  
Li Gao ◽  
P. H. Hor ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Deposition Temperature ◽  
Rf Magnetron Sputtering ◽  
Transition Width ◽  
Ybco Films ◽  
Synthesis Parameters ◽  
Better Than

AbstractThe synthesis parameters have been systematically examined for the in situ growth of high temperature superconducting Y‐Ba‐Cu‐0 thin films from a stoichiometric target by rf magnetron sputtering. By properly adjusting the deposition temperature, the total sputtering (O2+Ar)‐pressure and the O2‐partial pressure, we have reproducibly obtained 123 YBCO films with a zero resistivity temperature Tcz = 84 K and a transition width of 3 K°. The films so obtained have excellent surface morphology and a surface roughness better than ∼ 5 nm.

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