scholarly journals Recovery of Noble Metals using Electroless Displacement Deposition onto Silicon Powder

2018 ◽  
Vol 69 (2) ◽  
pp. 86-89
Author(s):  
Kenji FUKUDA ◽  
Shinji YAE
Keyword(s):  
Noble Metals ◽  
Silicon Powder ◽  
Displacement Deposition

Noble Metal Recovering by Electroless Displacement Deposition on Silicon Powder

2013 ◽  
Vol 53 (19) ◽  
pp. 69-76 ◽  
Author(s):  
K. Fukuda ◽  
S. Yae ◽  
N. Fukumuro ◽  
S. Sakamoto ◽  
H. Matsuda
Keyword(s):  
Noble Metal ◽  
Silicon Powder ◽  
Displacement Deposition

Electroless Displacement Deposition of Noble Metal on Silicon Powder for Recovering from Urban Mines

2014 ◽  
Vol 61 (10) ◽  
pp. 1-7 ◽  
Author(s):  
K. Fukuda ◽  
N. Fukumuro ◽  
S. Sakamoto ◽  
S. Yae
Keyword(s):  
Noble Metal ◽  
Silicon Powder ◽  
Displacement Deposition

Growth of near noble metal Pd and Pt thin film silicides morphology and structure

1984 ◽  
Vol 42 ◽  
pp. 498-499
Author(s):  
E. I. Alessandrini ◽  
M. O. Aboelfotoh
Keyword(s):  
Noble Metals ◽  
Annealing Temperature ◽  
Chemical Compounds ◽  
Barrier Properties ◽  
Solid State Reactions ◽  
Transmission Electron ◽  
Stable Chemical ◽  
Metal Thickness ◽  
Amorphous Si ◽  
Si Films

Considerable interest has been generated in solid state reactions between thin films of near noble metals and silicon. These metals deposited on Si form numerous stable chemical compounds at low temperatures and have found applications as Schottky barrier contacts to silicon in VLSI devices. Since the very first phase that nucleates in contact with Si determines the barrier properties, the purpose of our study was to investigate the silicide formation of the near noble metals, Pd and Pt, at very thin thickness of the metal films on amorphous silicon.Films of Pd and Pt in the thickness range of 0.5nm to 20nm were made by room temperature evaporation on 40nm thick amorphous Si films, which were first deposited on 30nm thick amorphous Si3N4 membranes in a window configuration. The deposition rate was 0.1 to 0.5nm/sec and the pressure during deposition was 3 x 10 -7 Torr. The samples were annealed at temperatures in the range from 200° to 650°C in a furnace with helium purified by hot (950°C) Ti particles. Transmission electron microscopy and diffraction techniques were used to evaluate changes in structure and morphology of the phases formed as a function of metal thickness and annealing temperature.

Microstructure and reactivity of small metal particles: The role of Ce additives

1992 ◽  
Vol 50 (1) ◽  
pp. 318-319
Author(s):  
L.D. Schmidt ◽  
K. R. Krause ◽  
J. M. Schwartz ◽  
X. Chu
Keyword(s):  
Atmospheric Pressure ◽  
Noble Metals ◽  
Mixed Oxides ◽  
Catalytic Properties ◽  
Chemical Shifts ◽  
Catalytic Converter ◽  
Structural Evolution ◽  
Single Particles ◽  
Small Metal Particles

The evolution of microstructures of 10- to 100-Å diameter particles of Rh and Pt on SiO2 and Al2O3 following treatment in reducing, oxidizing, and reacting conditions have been characterized by TEM. We are able to transfer particles repeatedly between microscope and a reactor furnace so that the structural evolution of single particles can be examined following treatments in gases at atmospheric pressure. We are especially interested in the role of Ce additives on noble metals such as Pt and Rh. These systems are crucial in the automotive catalytic converter, and rare earths can significantly modify catalytic properties in many reactions. In particular, we are concerned with the oxidation state of Ce and its role in formation of mixed oxides with metals or with the support. For this we employ EELS in TEM, a technique uniquely suited to detect chemical shifts with ∼30Å resolution.

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