scholarly journals Synthesis of Flattened Diamond Crystals by Hot-Filament CVD.

2003 ◽  
Vol 54 (1) ◽  
pp. 59-63
Author(s):  
Yutaka ISHIKAWA ◽  
Kazuhiro MITSUHASHI ◽  
Yoichi HIROSE
Keyword(s):  
Diamond Crystals ◽  
Hot Filament Cvd ◽  
Hot Filament

Growth Mode of {111} Surfaces of Diamond Crystals Synthesized by Hot-Filament CVD Method

1990 ◽  
Vol 29 (Part 2, No. 10) ◽  
pp. L1862-L1865 ◽  
Author(s):  
Keiji Hirabayashi ◽  
Noriko Iwasaki Kurihara
Keyword(s):  
Growth Mode ◽  
Cvd Method ◽  
Diamond Crystals ◽  
Hot Filament Cvd ◽  
Hot Filament

Triangular Structures on {111} Surfaces of Diamond Crystals Synthesized by the Hot-Filament CVD Method

1990 ◽  
Vol 29 (Part 2, No. 10) ◽  
pp. L1901-L1903 ◽  
Author(s):  
Keiji Hirabayashi ◽  
Noriko Iwasaki Kurihara
Keyword(s):  
Cvd Method ◽  
Diamond Crystals ◽  
Hot Filament Cvd ◽  
Hot Filament

Hot filament CVD diamond coating of TiC sliders

2007 ◽  
Vol 16 (3) ◽  
pp. 609-615 ◽  
Author(s):  
S. Konoplyuk ◽  
T. Abe ◽  
T. Takagi ◽  
T. Uchimoto
Keyword(s):  
Cvd Diamond ◽  
Diamond Coating ◽  
Hot Filament Cvd ◽  
Cvd Diamond Coating ◽  
Hot Filament

Hot-Filament CVD Methods

2018 ◽  
pp. 797-820
Author(s):  
Alberto Argoitia ◽  
Christopher S. Kovach ◽  
John C. Angus
Keyword(s):  
Hot Filament Cvd ◽  
Hot Filament

Hot Filament CVD

2007 ◽  
pp. 92-93
Author(s):  
C. L Aardahl ◽  
J. W. Rogers
Keyword(s):  
Hot Filament Cvd ◽  
Hot Filament

Si Whisker Growth by Hydrogen Radical using Hot Filament CVD Reactor

2007 ◽  
Vol 1018 ◽  
Author(s):  
Hiroshi Nagayoshi ◽  
Suzuka Nishimura ◽  
Kazutaka Terashima ◽  
Nobuo Matsumoto ◽  
Alexander G. Ulyashin
Keyword(s):  
Residence Time ◽  
Silicon Substrate ◽  
Silicon Surface ◽  
Whisker Growth ◽  
Silicon Hydride ◽  
Particle Layer ◽  
Hot Filament Cvd ◽  
Silicon Whisker ◽  
Hydrogen Radical ◽  
Hot Filament

AbstractThis paper describes the growth mechanism of silicon whisker on a silicon substrate using hot filament CVD reactor. Only hydrogen is used as source gas. The particle layer could be obtained at high filament current condition under hydrogen ambient. XPS analysis result suggests that the particle is composed of tungsten silicide. The deposition condition of the particle layer is much depended on the substrate size, surface condition and the distance between the substrate and the filament. The experimental results suggest that the silicon hydride, which generated at the silicon surface by hydrogen radical etching, react with the tungsten filament material around the filament, depositing on the silicon substrate. The silicon surface is etched by hydrogen radical and its resultant surface morphology is much depended on the particle deposition pattern. Many silicon whiskers, which diameter is varied from 10 to 50 nm, are observed on the textured silicon surface when the residence time of the source gas in the reactor is long. Each whisker has a silicon particle on their tip. The silicon hydride generated by the hydrogen radical etching is much absorbed to the silicide particle when the source gas residence time is long, enabling the silicon whisker growth from the particle. The results suggest that nm size whisker structure is much stable compare to the bulk silicon against etching reaction.

Selective Area Deposition of Hot Filament CVD Diamond on 100 mm MOCVD Grown AlGaN/GaN Wafers

2019 ◽  
Vol 19 (2) ◽  
pp. 672-677 ◽  
Author(s):  
Raju Ahmed ◽  
Anwar Siddique ◽  
Jonathan Anderson ◽  
Chris Engdahl ◽  
Mark Holtz ◽  
...  
Keyword(s):  
Cvd Diamond ◽  
Selective Area ◽  
Hot Filament Cvd ◽  
Hot Filament ◽  
Area Deposition
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