scholarly journals Particle Removal Mechanism in Ultrasonic Cleaning. Scrubbing Action by Resonant Bubbles.

1996 ◽  
Vol 47 (1) ◽  
pp. 37-41
Author(s):  
Tamami AZAKAMI ◽  
Hiroshi KIKUCHI
Keyword(s):  
Particle Removal ◽  
Removal Mechanism ◽  
Ultrasonic Cleaning

Analysis of Polyethylene Latex Particle Removal Mechanism on SiO2 Wafer Using Ultrasonic Spray Cleaning

2019 ◽  
Vol 92 (2) ◽  
pp. 199-207
Author(s):  
Yoshiyuki Seike ◽  
Ryoga Sawaki ◽  
Ryosuke Shimizu ◽  
Tomomi Hikida ◽  
Yuji Honda ◽  
...  
Keyword(s):  
Latex Particle ◽  
Particle Removal ◽  
Removal Mechanism ◽  
Ultrasonic Spray

Removal of Submicron Particles Using High Frequency Ultrasonics

1996 ◽  
Author(s):  
Ahmed A. Busnaina ◽  
Fen Dai
Keyword(s):  
High Frequency ◽  
Semiconductor Manufacturing ◽  
Submicron Particles ◽  
Particle Removal ◽  
Cleaning Process ◽  
Submicron Particle ◽  
New Techniques ◽  
Megasonic Cleaning ◽  
Ultrasonic Cleaning ◽  
Particulate Contamination

Abstract High-frequency ultrasonic cleaning is widely used in the semiconductor and other industries affected by contamination for the removal of particulate contamination. High frequency (near 1 MHz) ultrasonic cleaning (known as megasonic cleaning) is specially used in semiconductor manufacturing [1]. Many studies concerning submicron particle removal using megasonic and ultrasonic cleaning has been conducted recently [2–7]. The megsonic cleaning process proved to be the essential processes in cleaning silicon wafers after processes such as CMP, RIE, CVD, Sputter, etc. This paper introduces recent results that involve new techniques for introducing the ultrasonic energy in the cleaning bath.

Structural Effect of PVA Brush Nodule on Particle Removal Efficiency during Brush Scrubber Cleaning

2012 ◽  
Vol 516 ◽  
pp. 84-89 ◽  
Author(s):  
Joon Ho An ◽  
Yeong Bong Park ◽  
Hae Do Jeong
Keyword(s):  
Friction Force ◽  
Removal Efficiency ◽  
Silica Particle ◽  
Theoretical Models ◽  
Structural Effect ◽  
Polystyrene Latex ◽  
Wafer Surface ◽  
Particle Removal ◽  
Removal Mechanism ◽  
Mean Diameter

Brush cleaning can trigger both mechanical and chemical reaction to efficiently remove the adsorbed particles on the wafer. However, the removal mechanism of nanosized particles by brush cleaning is far from clear because no direct experimental data, such as the friction and contact force of the interface between brush and wafer surface, are available to back up the theoretical models in the literature. In this paper, we set up a monitoring system to measure the friction force of the interface between brush and wafer surface during brush cleaning to investigate the effect of the brush nodule structure having different nodule heights and nodule gaps on particle removal efficiency. To confirm the mechanical effect of the brush nodule structure, an oxide wafer contaminated with Polystyrene latex (PSL) particles (mean diameter: 300 nm) was cleaned with each PVA brush having different brush nodule structures using de-ionized water (DIW). The silica particle (mean diameter: 22 nm) and chemical solution (NH4OH, 0.1 wt%) were also used to investigate the chemical-aided particle removal. The remaining particles were measured with a Surfscan 6420 (KLA Tencor) and the friction force monitoring was conducted by using a Cleaner812-L (G&P Technology). The results indicated that a higher brush nodule height produced lower friction force, resulting in lower particle removal efficiency. When the nodule gap became smaller, the contact area between brush nodule and wafer surface became larger, resulting in higher particle removal efficiency. However, the experimental results using silica particles and 0.1 wt% of NH4OH showed different trends under each condition. The particle removal mechanism with silica particle and NH4OH was also verified by measuring the zeta potential between the particle and wafer.

Particle Removal Mechanism of High Volume Fraction SiCp/Al Composites by Single Diamond Grit Tool

2019 ◽  
Vol 34 (2) ◽  
pp. 324-331 ◽  
Author(s):  
Jinguang Du ◽  
Wuyi Ming ◽  
Yang Cao ◽  
Jun Ma ◽  
Wenbin He ◽  
...  
Keyword(s):  
Volume Fraction ◽  
High Volume ◽  
High Volume Fraction ◽  
Particle Removal ◽  
Removal Mechanism ◽  
Diamond Grit

Particle Removal Mechanism of Hydrogenated Ultrapure Water with Megasonic Irradiation

2001 ◽  
Vol 76-77 ◽  
pp. 245-250 ◽  
Author(s):  
Hiroshi Morita ◽  
Jun ichi Ida ◽  
Osamu Ota ◽  
Kazumi Tsukamoto ◽  
Tadahiro Ohmi
Keyword(s):  
Particle Removal ◽  
Removal Mechanism ◽  
Ultrapure Water

SUBMICRON PARTICLE REMOVAL USING ULTRASONIC CLEANING

1993 ◽  
Vol 11 (1-2) ◽  
pp. 11-24 ◽  
Author(s):  
ISMAIL KASHKOUSH ◽  
AHMBD BUSNAINA
Keyword(s):  
Particle Removal ◽  
Submicron Particle ◽  
Ultrasonic Cleaning

Research on High Volume Fraction SiCp/Al Removal Mechanism under Condition of Ultrasonic Vertical Vibration

2013 ◽  
Vol 373-375 ◽  
pp. 2038-2041 ◽  
Author(s):  
Xin Tao Zhi ◽  
Dao Hui Xiang ◽  
Jing Quan Deng
Keyword(s):  
Material Removal ◽  
Volume Fraction ◽  
High Volume ◽  
Vertical Vibration ◽  
High Volume Fraction ◽  
Particle Removal ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Crack Penetration ◽  
Brittle Material Removal

High volume fraction SiCp/Al is a new kind of composite materials, with broad application prospect in the aerospace, automobile manufacturing and other fields, and gradually become the key materials in the field of high technology. But with its internal high hardness material (SiC) content increases and the material removal mechanism is not very clear, general machining is more difficult and seriously hinders the development of the material. With the advantages of high material removal rate, effectively processing all kinds of complicated curved surface, especially, in the thin-walled parts processing, milling occupies an absolute advantage. In order to solve the processing problems of high volume fraction SiCp/Al composites, basing on the theory of ultrasonic and brittle material removal. PCD milling experiment of SiCp/Al was carried out with homemade ultrasonic milling system under the condition of ultrasonic vertical vibration, the material removal mechanism was studied, the 2d and 3d model of surface formation was established, finally, microscopic structure on the surface of the workpiece was analyzed by metallographic microscope and electron microscope. Research results show that: SiC particle removal form can be divided into type of cut, pulled, pressed and crack penetration; under the condition of ultrasonic, probability of SiC particles cut type increased, this forms better surface smoothness; due to tool and chip separation characteristics and the ultrasonic impact effect on material, the removal mechanism of SiCp/Al is close to the plastic material, forming better surface quality under condition of ultrasonic. This paper verifies that the ultrasonic vertical vibration cutting is an effective machining method for high volume fraction SiCp/Al.

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