Ceramic Process Variation Impact on Electrical Design Of High Frequency Components

2014 ◽  
Vol 2014 (1) ◽  
pp. 000205-000212
Author(s):  
Jerry Aguirre ◽  
Heather Tallo ◽  
Hide Shigenobu ◽  
Joe Uyesugi
Keyword(s):  
High Frequency ◽  
High Speed ◽  
Digital Signal ◽  
Monte Carlo Analysis ◽  
Electrical Performance ◽  
Full Wave ◽  
Microwave Components ◽  
Frequency Components ◽  
Rf Performance ◽  
High Frequency Microwave

The design and operation of high frequency microwave components and high-speed interconnects depends strongly on well characterized material technologies for robust, consistent, and repeatable performance from part to part. While characterization of the electrical and mechanical material properties is extremely important, the processing of the material into making structures is equally important. The process ultimately determines structure dimensional tolerances that will impact electrical performance, especially at high speed digital signal and high frequency applications. Understanding these tolerances, and their RF impact, can assist in selecting a material set based on process in addition to the published material electrical properties. This paper examines key electrical performance properties of two ceramic microwave components, a tapped line filter and an edge coupled microstrip filter, as a function of structure variations by use of a combination of a full-wave electromagnetic simulation tool and a pseudo-Monte Carlo analysis. These microwave components have been fabricated and measured to examine variations in RF performance as function of location on ceramic panel and to compare measured variations to expected variation predicted by simulation and analysis.

scholarly journals Review on the Millimeter-Wave Generation Techniques Based on Photon Assisted for the RoF Network System

2020 ◽  
Vol 2020 ◽  
pp. 1-14
Author(s):  
Jiangnan Xiao ◽  
Chuang Zhao ◽  
Xingxing Feng ◽  
Xu Dong ◽  
Jiangli Zuo ◽  
...  
Keyword(s):  
High Frequency ◽  
Low Cost ◽  
Electronic Devices ◽  
Low Frequency ◽  
Digital Signal ◽  
Development Trend ◽  
Wave Generation ◽  
Communication Link ◽  
Network System ◽  
High Frequency Microwave

With the development trend of wireless and broadband in the communication link and even the whole information industry, the demand of high-frequency microwave bandwidth has been increasing. The RoF network system solves the problem of spectrum congestion in low-frequency band by providing an effective technology for the distribution of high-frequency microwave signals over optical fiber links. However, the traditional mm-wave generation technique is limited by the bandwidth of electronic devices. It is difficult to generate high-frequency and low-phase noise mm-wave signals with pure electrical components. The mm-wave communication technology based on photon assisted can overcome the bandwidth bottleneck of electronic devices and provide the potential for developing the low-cost infrastructure demand of broadband mobile services. This paper will briefly explain the characteristics of the RoF network system and the advantages of high-frequency mm-wave. Then we, respectively, introduce the modulation schemes of RoF mm-wave generation based on photon assisted including directly modulated laser (DML), external modulation, and optical heterodyne. The review mainly focuses on a variety of different mm-wave generation technologies including multifrequency vector mm-wave. Furthermore, we list several approaches to realize the large capacity data transmission techniques and describe the digital signal processing (DSP) algorithm flow in the receiver. In the end, we summarize the RoF network system and look forward to the future.

scholarly journals A Miniaturized Transmitting LPDA Design for 2 MHz–30 MHz Uses

Sensors ◽  
2021 ◽  
Vol 21 (18) ◽  
pp. 6034
Author(s):  
Wenjun Zhu ◽  
Lixin Guo
Keyword(s):  
High Frequency ◽  
Optimization Methods ◽  
Directional Pattern ◽  
Electrical Performance ◽  
Impedance Bandwidth ◽  
Gain Bandwidth ◽  
Wave Simulation ◽  
Full Wave ◽  
Coefficient Optimization ◽  
Simulation Results

A miniaturized horizontal polarized high frequency transmitting LPDA is presented. In use of the dipole transformation and antenna coefficient optimization methods, a 65% reduction in the size was achieved with the electrical performance kept in a competitive level. Full-wave simulation results showed a stable directional pattern and lower VSWR over the impedance bandwidth of 2 to 30 MHz. The gain bandwidth can reach the range of 4–30 MHz, meanwhile, there is only minor degradation on gain in frequencies under 4 MHz.

Frequency and Time-Domain Performance of LTCC Transmission Lines Fabricated Using Multiple Printing Techniques

2013 ◽  
Vol 2013 (CICMT) ◽  
pp. 000047-000053
Author(s):  
J. Phillip Bailey ◽  
Michael D. Glover ◽  
Emmanuel Decrossas ◽  
Kaoru Porter ◽  
Tom Cannon ◽  
...  
Keyword(s):  
Cross Sections ◽  
Transmission Lines ◽  
Time Domain ◽  
High Frequency ◽  
High Speed ◽  
Digital Signal ◽  
Simulation Models ◽  
Advantages And Disadvantages ◽  
Lower Insertion Loss ◽  
Printing Techniques

The many advantages of low temperature co-fired ceramic (LTCC) materials are increasing their use in multi-layer systems containing multiple high-frequency / high-speed digital interconnects. Although construction of such interconnects is possible with current fabrication techniques, the loss exhibited by transmission lines at high frequencies limits their application by increasing system power consumption or requiring complex transceivers. Use of non-standard metal printing processes provides one possibility for realizing lower insertion loss desired for these interconnects. We have fabricated and evaluated representative single-ended and differential stripline transmission line structures using single, double, and mirror printing techniques for Ag metalization in DuPont 9K7 LTCC, to explore their suitability for high-frequency/high-speed applications. Discussion of analysis performed on cross-sections of these structures to determine post-firing geometry, as well as the level of fabrication control afforded over these parameters will be presented. To predict their performance for high-speed interconnects, 3D electromagnetic (3DEM) simulation models for characterizing the frequency performance of single-ended and differential structures have been also been developed. These 3DEM models have also been used in time domain simulations to verify digital signal capability by demonstrating structure performance at data rates exceeding 25 Gbps. Measurements of fabricated structures corresponding to the 3DEM models have also been performed in both the time and frequency domain and will be compared to the simulation results to confirm 3DEM model accuracy. The culmination of results from simulation and measurement will be used to present the differences, advantages, and disadvantages of each fabrication technique.

scholarly journals Design of High Speed and Precision and Low-Power LVDS Driver for CMOS Image Sensor

2020 ◽  
Vol 38 (2) ◽  
pp. 442-450
Author(s):  
Chuangze Li ◽  
Benguang Han ◽  
Jie He ◽  
Longsheng Wu
Keyword(s):  
Low Power ◽  
High Frequency ◽  
High Speed ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Compensation Method ◽  
Common Mode ◽  
General Design ◽  
Frequency Components ◽  
The Common

Aiming at the requirement of high speed and precision, low-power and large-capacity load of serial data interface for aerospace super large array(15k×15k) CMOS image sensor, a design scheme low voltage differential signal (LVDS) driver by combining the split-length method with the pre-emphasis technique is proposed. Firstly, comparing with the general design schemes, the present scheme uses the split-length compensation method to increase effectively the unity-gain bandwidth while keeping the op-amp gain constant. Secondly, the pre-emphasis technique is used to compensate the LVDS driver for high-frequency components to improve the driving capability of the capacitive load and high speed signal integrity (SI). The simulation results show that the accuracy of the common-mode feedback voltage is improved by using the split-length compensation method, and also the common-mode voltage changes below 15 mV. The pre-emphasis technique is used to enhance the amplitude of the high-frequency components lost during the high-speed transmission. The quality of the signal eye diagram during high-speed transmission reduces the bit error rate, and both the transmission rate and the driving load capacity are two times more than the general design (1.2 Gb/s@12 pF), and the quiescent current consumption is only 4.6 mA@12 pF. The present LVDS driver design is implemented in a typical CMOS process of 0.18 μm.

High Speed and High Sensitivity Slip Sensor for Dexterous Grasping

2012 ◽  
Vol 24 (2) ◽  
pp. 298-310 ◽  
Author(s):  
Seiichi Teshigawara ◽  
◽  
Takahiro Tsutsumi ◽  
Yosuke Suzuki ◽  
Makoto Shimojo ◽  
...  
Keyword(s):  
High Frequency ◽  
High Speed ◽  
High Sensitivity ◽  
Frequency Component ◽  
High Frequency Component ◽  
Robot Hand ◽  
Voltage Signal ◽  
Frequency Components ◽  
Slip Sensor ◽  
Gripping Force

Slip-detecting tactile sensors are essential if robot hands are ever to achieve the gripping motions of human hands. In our previous research, we developed a flexible, thin, and lightweight slip sensor that exploits resistance changes in pressure conductive rubber. However, using this sensor, it was difficult to distinguish between object slip and changes in normal force. Therefore, in this research, we investigate a method of identifying object slip by analyzing the frequency components of the output signal from the sensor. As a result, we find that high-frequency components of several kilohertz or more are included in the complex voltage signal immediately before object slip. Therefore, using this high-frequency component, we develop a simple structure sensor that distinguishes between both contact and a state of immediately before slip with high sensitivity. Moreover, we design a slip sensor for a robot hand and examine the effects of noise by manipulation. Finally, we describe an experiment involving the adjustment of the gripping force of a robot hand.

Full Band S-Parameter Generation Methodology for High Speed Package Interconnect Modeling

2005 ◽  
Author(s):  
Xiangyin Zeng ◽  
Jiangqi He ◽  
Baoshu Xu
Keyword(s):  
Frequency Band ◽  
Time Domain ◽  
High Frequency ◽  
High Speed ◽  
Signal Integrity ◽  
Low Frequency ◽  
Frequency Range ◽  
Full Wave ◽  
S Parameter ◽  
Full Band

Beyond GHz operation frequency and Gb/s transfer rate bring a big challenge to high speed package interconnect designs. To make sure the product meets the specifications, signal integrity analysis has to be done carefully for critical signals before tape out for manufacturing. In order to obtain an accurate signal integrity modeling, the package interconnect must be accurately modeled. Frequency domain S-parameter has been widely used to replace the traditional package lumped model characterized by the fixed values of R, L, and C, which is no longer accurate. To facilitate the time domain analysis, equivalent circuits or behavioral macro models can be established based on the frequency domain S-parameter. In order to obtain a stable, casual and accurate time domain response, the S-parameter should be accurate in the full frequency band from DC to the interested maximum frequency. Usually full wave electromagnetic simulators are used to obtain the package S-parameter. The obtained S-parameter is very accurate in high frequency band, but unfortunately poor in low frequency band which is usually an extrapolation of the high frequency results. Improper use of such EM tools will result in wrong S-parameter, which may sometimes bring instability to the final results in a time-domain simulator based on direct convolution. The equivalent circuit synthesized from the high frequency S-parameter may also generate poor result due to lack of accurate information in the low frequency band. In this paper, we first address the theoretic al reason for the inaccurate low frequency result from the full wave electromagnetic simulators. Then we introduce a new process to generate accurate S-parameter in the full interested frequency band. In the process, the frequency band is divided into three parts, the low frequency range, middle frequency range, and the high frequency range. Skin effect phenomenon is found to be the physical explanation for the frequency band division. It is found that properly choosing EM tools in the proper frequency band is the key to get accurate full band S-parameters.

An e.s.r. spectrometer operating at 4 mm wavelength for the investigation of large zero field splittings

1969 ◽  
Vol 312 (1508) ◽  
pp. 85-98 ◽  
Keyword(s):  
Indium Antimonide ◽  
High Frequency ◽  
Zero Field ◽  
Wavelength Band ◽  
Short Wavelength Band ◽  
Very High Frequency ◽  
Microwave Components ◽  
Molecular Fields ◽  
High Frequency Microwave ◽  
Very High

This paper describes the design and construction of an electron resonance spectrometer operating at a wavelength of 4 mm, and with magnetic fields up to 5 T (50 kG). The particular advantages of measurements in this short wavelength band are first discussed, and then the particular problems that arise with these very high frequency microwave components are analysed. It is shown that, despite these difficulties, a spectrometer can be constructed with a sensitivity of 5 x 10 10 spins per millitesla linewidth for an integrating time of 1 s, and that a further improvement of sensitivity by the use of other types of microwave detectors, such as indium antimonide, can be obtained. A series of measurements on myoglobin pastes is then summarized, at the end, to show how such high frequency e.s.r. spectrometers can be employed to measure the large zero field splittings that are produced by the internal molecular fields in certain transition group complexes.

Radiation Mechanisms and Electromagnetic Interference in Ceramic Electronic Packages

2012 ◽  
Vol 2012 (1) ◽  
pp. 000628-000637
Author(s):  
Jerry Aguirre ◽  
Marcos Vargas ◽  
Paul Garland
Keyword(s):  
Electromagnetic Interference ◽  
High Frequency ◽  
High Speed ◽  
Printed Circuit Board ◽  
Circuit Board ◽  
Electromagnetic Analysis ◽  
Electronic Packages ◽  
Radiation Mechanisms ◽  
Printed Circuit ◽  
Full Wave

A full-wave electromagnetic analysis for characterizing typical electromagnetic shielding practices in ceramic electronic packages is presented. Typically in printed circuit board emissions, the power plane emissions, and exposed surface nets are considered, however, the signal interconnect from the PCB to an electronic package can also be a significant source of radiation and hence an electromagnetic interference (EMI) issue. In this paper we describe electromagnetic radiation mechanisms resulting from high-frequency and high-speed applications in ceramic multilayer electronic packages and review the typical practice of implementing via fences to mitigate and reduce the EMI risk within a package substrate and also for the case when the package is part of a package/board configuration.

Sign in / Sign up

Export Citation Format

Share Document