Reliability of silver wedge bonding for power devices
Recently there is a trend toward to use SiC instead of Si in power devices since SiC can withstand higher temperature (above 300°C) and higher voltage with less power loss than Si. So there is a great interest to improve interconnection technique for power devices package. In this study, Ag wire with diameter of 200 μm was bonded on Al pad, after annealing at 200°C and 300°C, intermetallic compounds (IMC) were investigated by energy dispersive X-ray spectroscopy (EDS). The results show that, when annealed in air, two kinds of IMC Ag2Al and Ag3 Al formed and no voids or cracks were observed; but when annealed with epoxy molded IC package, voids were observed, and between Ag wire and IMC there was a corrosion layer.