Packaging Tradeoff for SIP Integration Targeting High Speed PAM-4 Applications

2015 ◽  
Vol 2015 (1) ◽  
pp. 000730-000734
Author(s):  
B Haentjens ◽  
G Desruelles ◽  
G Chrétien ◽  
A Leborgne ◽  
Y Haentjens ◽  
...  
Keyword(s):  
System Integration ◽  
High Speed ◽  
Pulse Amplitude ◽  
Electronic System ◽  
Design Flow ◽  
Ultra Wideband ◽  
Optical Modulators ◽  
Eye Diagram ◽  
Modulation Format ◽  
Bga Package

High speed transmission systems using optical fiber are now focusing on 4-level PAM (Pulse Amplitude Modulation) format. This is requesting ultra-wideband electronic system in package, with a high phase linearity behavior in order to drive the electro-optical modulators. Moreover, new power DAC (Digital to Analog Converter) dies, are now available to generate up to 56 GBd, 4-level PAM signals, and providing 4Vpp of differential output amplitude swing. High frequency studies have been pursued to provide system integration in a BGA (Ball Grid Array) package. The BGA package transitions optimization and the configuration of multi-lines carriers, becomes a key step in the design flow. In this paper, some steps of the design, manufacturing process of the SIP (System In Package) and its demonstration board are proposed. The choices of the package, the thermal management, the clock management function are studied according to the final environmental constraint of the SIP. The data lines phase skew are analyzed with the support of EM (Electro Magnetic) simulations to better understand the potential impact on the output eye. Finally, the BGA package transition, simulated and measured results are compared, from DC up to 40 GHz and the measured SIP output, 4 levels, 56GBps eye diagram is presented.

scholarly journals DSP-Based 40 GB/s Lane Rate Next-Generation Access Networks

2018 ◽  
Vol 10 (12) ◽  
pp. 118 ◽  
Author(s):  
Jinlong Wei ◽  
Ji Zhou ◽  
Elias Giacoumidis ◽  
Paul Haigh ◽  
Jianming Tang
Keyword(s):  
Optical Networks ◽  
High Speed ◽  
Digital Signal ◽  
Pulse Amplitude ◽  
Network Capacity ◽  
Access Networks ◽  
Next Generation ◽  
Efficient Manner ◽  
Continuous Growth ◽  
Modulation Format

To address the continuous growth in high-speed ubiquitous access required by residential users and enterprises, Telecommunication operators must upgrade their networks to higher data rates. For optical fiber access networks that directly connect end users to metro/regional network, capacity upgrade must be done in a cost- and energy-efficient manner. 40 Gb/s is the possible lane rate for the next generation passive optical networks (NG-PONs). Ideally, existing 10 G PON components could be reused to support 40 Gb/s lane-rate NG-PON transceiver, which requires efficient modulation format and digital signal processing (DSP) to alleviate the bandwidth limitation and fiber dispersion. The major contribution of this work is to offer insight performance comparisons of 40 Gb/s lane rate electrical three level Duobinary, optical Duobinary, and four-level pulse amplitude modulation (PAM-4) for incorporating low complex DSPs, including linear and nonlinear Volterra equalization, as well as maximum likelihood sequence estimation. Detailed analysis and comparison of the complexity of various DSP algorithms are performed. Transceiver bandwidth optimization is also undertaken. The results show that the choices of proper modulation format and DSP configuration depend on the transmission distances of interest.

scholarly journals Low power design of ultra wideband PLL using 90 nm CMOS technology

2020 ◽  
Vol 20 (2) ◽  
pp. 727
Author(s):  
Fadhilah Binti Noor Al Amin ◽  
Nabihah Ahmad ◽  
Siti Hawa Ruslan
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Large Scale ◽  
Vlsi Design ◽  
Electronic System ◽  
Low Power Design ◽  
Cmos Technology ◽  
Ultra Wideband

<span>The rapid growth of the electronic system has become one of the challenges in the high performance of Very Large Scale Integration (VLSI) design and has contributed to the evolution of Phase Locked Loop (PLL) system design as one of the inevitable and significant necessities in the modern days. This design focus on the development of PLL system that can operate at a high performance within the Ultra-Wideband (UWB) frequency but consume low power that may be useful for future device implementation in the communication system. All proposed sub modules of PLL is highly suitable for low power and high speed application as each of them consumes overall power consumption around 2 µW until 1 mW with frequency from 3.1 GHz to 10.6 GHz. All the design architecture, schematic, simulation and analysis are implemented using Synopsys Tool in 90 nm CMOS technology. Through the overall analysis, it can be concluded that this proposed sub modules design of the PLL system has better performance compared to previous work in terms of power consumption and frequency.</span>

scholarly journals Ultracompact and low-power-consumption silicon thermo-optic switch for high-speed data

Nanophotonics ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 937-945
Author(s):  
Ruihuan Zhang ◽  
Yu He ◽  
Yong Zhang ◽  
Shaohua An ◽  
Qingming Zhu ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Pulse Amplitude ◽  
Telecommunication Networks ◽  
Low Power Consumption ◽  
Power Efficient ◽  
High Speed Data ◽  
On Chip

AbstractUltracompact and low-power-consumption optical switches are desired for high-performance telecommunication networks and data centers. Here, we demonstrate an on-chip power-efficient 2 × 2 thermo-optic switch unit by using a suspended photonic crystal nanobeam structure. A submilliwatt switching power of 0.15 mW is obtained with a tuning efficiency of 7.71 nm/mW in a compact footprint of 60 μm × 16 μm. The bandwidth of the switch is properly designed for a four-level pulse amplitude modulation signal with a 124 Gb/s raw data rate. To the best of our knowledge, the proposed switch is the most power-efficient resonator-based thermo-optic switch unit with the highest tuning efficiency and data ever reported.

40 Gb/s High-speed mode-division multiplexing transmission employing NRZ modulation format

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Rabiu Imam Sabitu ◽  
Nafizah Goriman Khan ◽  
Amin Malekmohammadi
Keyword(s):  
System Performance ◽  
High Speed ◽  
Direct Detection ◽  
Signal To Noise Ratio ◽  
Optical Signal ◽  
Threshold Power ◽  
Modulation Format ◽  
Transmission Distance ◽  
Mode Division Multiplexing ◽  
Speed Mode

AbstractThis report examines the performance of a high-speed MDM transmission system supporting four nondegenerate spatial modes at 10 Gb/s. The analysis adopts the NRZ modulation format to evaluate the system performance in terms of a minimum power required (PN) and the nonlinear threshold power (PTH) at a BER of 10−9. The receiver sensitivity, optical signal-to-noise ratio, and the maximum transmission distance were investigated using the direct detection by employing a multimode erbium-doped amplifier (MM-EDFA). It was found that by properly optimizing the MM-EDFA, the system performance can significantly be improved.

scholarly journals Inverted p-down Design for High-Speed Photodetectors

Photonics ◽  
2021 ◽  
Vol 8 (2) ◽  
pp. 39
Author(s):  
Masahiro Nada ◽  
Fumito Nakajima ◽  
Toshihide Yoshimatsu ◽  
Yasuhiko Nakanishi ◽  
Atsushi Kanda ◽  
...  
Keyword(s):  
Amplitude Modulation ◽  
Optical Communications ◽  
High Speed ◽  
Pulse Amplitude ◽  
Avalanche Photodiode ◽  
Device Fabrication ◽  
Pulse Amplitude Modulation ◽  
Optical Coupling ◽  
Pin Photodiodes

We discuss the structural consideration of high-speed photodetectors used for optical communications, focusing on vertical illumination photodetectors suitable for device fabrication and optical coupling. We fabricate an avalanche photodiode that can handle 100-Gbit/s four-level pulse-amplitude modulation (50 Gbaud) signals, and pin photodiodes for 100-Gbaud operation; both are fabricated with our unique inverted p-side down (p-down) design.

scholarly journals Asymmetric Ge/SiGe coupled quantum well modulators

Nanophotonics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 1765-1773
Author(s):  
Yi Zhang ◽  
Jianfeng Gao ◽  
Senbiao Qin ◽  
Ming Cheng ◽  
Kang Wang ◽  
...  
Keyword(s):  
Energy Consumption ◽  
Quantum Well ◽  
Quantum Wells ◽  
High Speed ◽  
Low Voltage ◽  
Extinction Ratio ◽  
High Frequency Response ◽  
Modulation Format ◽  
Silicon Photonic ◽  
Coupled Quantum Well

Abstract We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with different widths are employed as the active region to enhance the electro-optical characteristics of the device by controlling the coupling of the wave functions. The fabricated device can realize 5 dB extinction ratio at 1446 nm and 1.4 × 10−3 electrorefractive index variation at 1530 nm with the associated modulation efficiency V π L π of 0.055 V cm under 1 V reverse bias. The 3 dB bandwidth for high frequency response is 27 GHz under 1 V bias and the energy consumption per bit is less than 100 fJ/bit. The proposed device offers a pathway towards a low voltage, low energy consumption, high speed and compact modulator for silicon photonic integrated devices, as well as opens possibilities for achieving advanced modulation format in a more compact and simple frame.

Fast and Accurate Estimation of Statistical Eye Diagram for Nonlinear High-Speed Links

2021 ◽  
pp. 1-9
Author(s):  
Xiuqin Chu ◽  
Wenting Guo ◽  
Jun Wang ◽  
Feng Wu ◽  
Yuhuan Luo ◽  
...  
Keyword(s):  
High Speed ◽  
Accurate Estimation ◽  
Eye Diagram
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