Highly Integrated and Isolated Universal Half-Bridge Power Gate Driver and Associated Flyback Power Supply for High Temperature and High Reliability Applications

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000206-000213
Author(s):  
David Gras ◽  
Christophe Pautrel ◽  
Amir Fanaei ◽  
Gregory Thepaut ◽  
Maxime Chabert ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Power Supply ◽  
High Efficiency ◽  
High Reliability ◽  
System Level ◽  
Switching Frequency ◽  
Solder Paste ◽  
High Side ◽  
Gate Driver

In this paper we present a highly integrated, high-temperature isolated, half-bridge power gate driver demo board, based on turnkey X-REL chipset: XTR26010 (High-Temperature Intelligent Gate Driver), XTR40010 (High-Temperature Isolated Two Channel Transceiver), XTR30010 (High-Temperature PWM Controller), and XTR2N0825 (High-Temperature 80V N-Channel Power MOSFET). The XTR26010 is the key circuit in this chipset for power gate drive application. The XTR26010 circuit has been designed with a high focus in offering a robust, reliable and efficient solution for driving a large variety of high-temperature, high-voltage, and high-efficiency power transistors (SiC, GaN, Si) existing in the market. Furthermore, the XTR26010 circuit implements an unprecedented functionality for high-temperature drivers allowing safe operation at system level by preventing any cross-conduction between high-side and low-side switches, through isolated communication between high-side and low-side drivers. The XTR40010 is used for isolated data communication between a microcontroller or a PWM controller with the power driver (XTR26010). For supplying the half-bridge gate driver, a compact isolated flyback power supply has been developed thanks to the versatile voltage mode PWM controller XTR30010 and the XT2N0825 N-Channel MOSFET. The full system has been successfully tested while driving different brands of SiC MOSFETs up to Ta=200°C, 600kHz of switching frequency and 600V high-voltage bus (limited by isolation transformers used). The demo board presented can be easily modified to drive other SiC and GaN transistors available in the market. The 200°C limitation of the demo board is due to passives, PCB material, and the solder paste used. However, all X-REL active circuits have been qualified within specifications well above 230°C.

An SOI-based High-Voltage, High-Temperature Gate-Driver for SiC FET

2007 ◽  
Author(s):  
M. A Huque ◽  
R. Vijayaraghavan ◽  
M. Zhang ◽  
B. J. Blalock ◽  
L M. Tolbert ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Gate Driver

scholarly journals A UNIVERSAL SOI-BASED HIGH TEMPERATURE GATE DRIVER INTEGRATED CIRCUIT FOR SiC POWER SWITCHES WITH ON-CHIP SHORT CIRCUIT PROTECTION

2011 ◽  
Vol 20 (03) ◽  
pp. 471-484 ◽  
Author(s):  
LIANG ZUO ◽  
ROBERT GREENWELL ◽  
SYED K. ISLAM ◽  
M. A. HUQUE ◽  
BENJAMIN J. BLALOCK ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Integrated Circuit ◽  
Heat Sink ◽  
Low Cost ◽  
Short Circuit ◽  
Silicon On Insulator ◽  
Successful Operation ◽  
Power Switches ◽  
Gate Driver

In recent years, increasing demand for hybrid electric vehicles (HEVs) has generated the need for reliable and low-cost high-temperature electronics which can operate at the high temperatures under the hood of these vehicles. A high-voltage and high temperature gate-driver integrated circuit for SiC FET switches with short circuit protection has been designed and implemented in a 0.8-micron silicon-on-insulator (SOI) high-voltage process. The prototype chip has been successfully tested up to 200°C ambient temperature without any heat sink or cooling mechanism. This gate-driver chip can drive SiC power FETs of the DC-DC converters in a HEV, and future chip modifications will allow it to drive the SiC power FETs of the traction drive inverter. The converter modules along with the gate-driver chip will be placed very close to the engine where the temperature can reach up to 175ΰC. Successful operation of the chip at this temperature with or without minimal heat sink and without liquid cooling will help achieve greater power-to-volume as well as power-to-weight ratios for the power electronics module.

High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000152-000158
Author(s):  
J. Valle Mayorga ◽  
C. Gutshall ◽  
K. Phan ◽  
I. Escorcia ◽  
H. A. Mantooth ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Low Voltage ◽  
Silicon On Insulator ◽  
Switching Frequency ◽  
Cmos Process ◽  
High Power Density ◽  
Power Modules ◽  
Gate Driver

SiC power semiconductors have the capability of greatly outperforming Si-based power devices. Faster switching and smaller on-state losses coupled with higher voltage blocking and temperature capabilities, make SiC a very attractive semiconductor for high performance, high power density power modules. However, the temperature capabilities and increased power density are fully utilized only when the gate driver is placed next to the SiC devices. This requires the gate driver to successfully operate under these extreme conditions with reduced or no heat sinking requirements, allowing the full realization of a high efficiency, high power density SiC power module. In addition, since SiC devices are usually connected in a half or full bridge configuration, the gate driver should provide electrical isolation between the high and low voltage sections of the driver itself. This paper presents a 225 degrees Celsius operable, Silicon-On-Insulator (SOI) high voltage isolated gate driver IC for SiC devices. The IC was designed and fabricated in a 1 μm, partially depleted, CMOS process. The presented gate driver consists of a primary and a secondary side which are electrically isolated by the use of a transformer. The gate driver IC has been tested at a switching frequency of 200 kHz at 225 degrees Celsius while exhibiting a dv/dt noise immunity of at least 45 kV/μs.

scholarly journals DESIGN AND CONSTRUCTION OF A LOW-COST 30KV VARIABLE DC POWER SUPPLY UNIT

2020 ◽  
pp. 3666-3673
Author(s):  
Bolarinwa H.S. ◽  
Fajingbesi F.E. ◽  
Yusuf A. ◽  
Animasahun L. O. ◽  
Babatunde Y. O.
Keyword(s):  
High Voltage ◽  
Power Supply ◽  
Low Voltage ◽  
High Reliability ◽  
Low Cost ◽  
Scientific Data ◽  
High Voltage Power Supply ◽  
Technology Application ◽  
High Voltage Direct Current ◽  
Current Voltage

A high voltage power supply is a key component in the advancement of science and technology. Application of high voltage power supply requires careful attention to critical variables such as voltage ripple, long and shortterm stability, repeatability and accuracy. These are important factors in the consideration of reliable scientific data. This paper presents the design of a low-cost high voltage power supply from the off-the-shelf electronics components to meet the high-end requirement of high voltage power supply. A 30kV, 63.8mA maximum power supply was constructed at the Fountain University electronics workshop. This high voltage directs current (HVDC) power supply was built around three basic compartments that include an adjustable low voltage power supply (LVPS), a high frequency oscillator, and a line output transformer (LOPT) using flyback transformer, NE555timer, BU508D BJT, and other off-the-shelf components. The current-voltage relationship at the output of the constructed High Voltage Direct Current was found to be linear. This power source will serve any high DC voltage applications such as electrospinning. The constructed 30kV power supply has been tested in the electrospinning laboratory of the Center for Energy Research and Development (CERD) Obafemi Awolowo University (OAU) Ile-Ife. The unit successfully electrospun Zinc-Titaninm polymeric solution into fibers at about 8 kV. The importance of this fabricated device is its high reliability despite its low cost and capability to produce different magnitude of high voltage DC.

scholarly journals An Ultra-Low Quiescent Current Under-Voltage Lockout Circuit for a High-Voltage Gate Driver IC

Electronics ◽  
2020 ◽  
Vol 9 (10) ◽  
pp. 1729
Author(s):  
Kunhee Cho
Keyword(s):  
High Voltage ◽  
Supply Voltage ◽  
Voltage Sensor ◽  
Oxide Semiconductor ◽  
Portable Devices ◽  
High Side ◽  
Resistive Divider ◽  
Gate Driver ◽  
Quiescent Current ◽  
Voltage Gate

An ultra-low quiescent current under-voltage lockout (UVLO) circuit for a high-voltage gate driver integrated circuit (HVIC) is described for application in portable devices. The UVLO circuit consumes the static current in the high-side circuitry and the resistive divider used to detect the supply-voltage was the major consumer of power in the circuit. Hence, a supply-voltage sensor based on a diode-connected metal–oxide–semiconductor field-effect transistor (MOSFET) with a voltage limiter design is proposed to ensure low power consumption. Unlike the conventional UVLO design, where a resistive divider is used, the proposed structure dissipates the negligible current at a low supply-voltage and significantly reduces the static current at the nominal and high supply-voltage. The high-side quiescent current using the proposed design and the conventional designs at various supply-voltage levels are analyzed. In the proposed structure, the size of the voltage sensor is considerably smaller when compared with those in conventional designs.

A Kind of New Switching Power Supply with Multiple Isolated Outputs Used in High-Voltage Static Synchronous Compensator

2012 ◽  
Vol 249-250 ◽  
pp. 567-571
Author(s):  
Bing Jun Yan ◽  
Ai Dong Xu ◽  
Zhan Yuan Bai
Keyword(s):  
High Voltage ◽  
Power Supply ◽  
High Efficiency ◽  
High Price ◽  
Switching Power Supply ◽  
Power Module ◽  
Static Synchronous Compensator ◽  
Distributed Application ◽  
Switching Power ◽  
Efficiency And Reliability

The background of this paper is the power supply driven by High-voltage Static Synchronous Compensator series module, a kind of applicable to high voltage power module is proposed in this paper. Using High-voltage Static Synchronous Compensator, this device Switching Power Supply has the advantages of small in volume, light in weight, high efficiency and reliability. Compared with the high voltage of the insulation frequency transformer, this device overcoming many shortcomings, such as huge in volume and high price. This device is more suitable for distributed application, therefore it is very easy to realize multiple outputs of the power.

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