Characterization of AgBiX™ Solder Paste on Thick Film for 200°C Applications

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000340-000346 ◽  
Author(s):  
Zhenzhen Shen ◽  
Wayne Johnson ◽  
Michael C. Hamilton
Keyword(s):  
High Temperature ◽  
Thick Film ◽  
Solidus Temperature ◽  
Passive Component ◽  
Solder Paste ◽  
Die Attach ◽  
High Temperature Storage ◽  
Temperature Storage

AgBiX™ (Indium Corporation) solder paste has a solidus temperature of ∼262°C after reflow, which is suitable for passive component, semiconductor and power die attach for 200°C applications. In this work, the paste has been used to assemble SiC die with Ti/Ni/Ag thin film metallization to Ag and PdAg thick film substrates. High temperature storage testing (200°C) was preformed to characterize the reliability of the assemblies. Surface mount chip resistors attached to thick film substrates were also subject to high temperature storage. Comparisons of the performance of die attach and resistor attach on Ag substrates and PdAg substrates are made. EDX and failure analysis was used to understand the role of Pd on the failure mode and lower aged shear strengths with the thick film PdAg conductors.

Investigation into the Role of Different Substrate Ni Compositions and Plating Methods on Die Attach Reliability

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000073-000082
Author(s):  
Jinzi Cui ◽  
R. Wayne Johnson ◽  
Michael C. Hamilton
Keyword(s):  
Shear Strength ◽  
High Temperature ◽  
High Power ◽  
Diffusion Barrier ◽  
Die Attach ◽  
High Temperature Storage ◽  
The Impact ◽  
Direct Bond Copper ◽  
Temperature Storage

Nickel is a commonly used diffusion barrier for direct bond copper (DBC) substrates used in high temperature, high power applications. The Ni can be deposited by electroless or electrolytic plating and may be pure Ni, Ni:P, Ni:B or Ni:Co. The reactivity of these different Ni layers with AuGe and BiAgX® solder is explored. Specifically the reaction to form Ni-Ge intermetallics and NiBi3 during high temperature storage and the impact on die shear strength and failure mode are discussed.

Sintered Silver Die Attach with Extreme Thermal Stability for Extreme and Dynamic Environments

2017 ◽  
Vol 2017 (HiTEN) ◽  
pp. 000168-000176 ◽  
Author(s):  
Khalid Khtatba ◽  
Seyed Amir Paknejad ◽  
Ali Mansourian ◽  
Samjid H. Mannan
Keyword(s):  
High Temperature ◽  
Surface Oxidation ◽  
Migration Route ◽  
Oxidation Treatment ◽  
Contact Metallization ◽  
Die Attach ◽  
High Temperature Storage ◽  
Internal Pore ◽  
Temperature Storage ◽  
Sintered Silver

Abstract: The surface oxidation of internal pore surfaces of nano-scale sintered silver has increased stability for high temperature applications. After treatment, high temperature storage at 400 °C has resulted in no changes to microstructure. By contrast, it is known that the microstructure of untreated pressure-less sintered silver continuously evolves at temperatures above 200 °C. Grain and pore growth occur in this temperature range for conventional sintered silver resulting in coarsening of the microstructure and increased susceptibility to fatigue. However, oxidation treatment of the internal pore surfaces has the effect of freezing the microstructure when the contact metallization is also silver or chemically inert. Oxidation prevents mass transfer by shutting down the fastest atomic migration route along the internal pore surfaces. Samples exhibited no change in microstructure either through continuous observation through glass, or after cross sectioning. The tested specimens under high temperature storage resisted grain growth for the whole duration of the tests of more than 600 h at 300 °C. The only detectable changes in microstructure occurred in a sparse number of isolated grains (1 in 7000 grains), presumably due to non-penetration of oxidising treatment into these closed pore spaces. It is hypothesized that even these can be prevented by minor changes to the sintering paste to slightly increase initial porosity. The oxidising treatment can be performed via many different routes, such as exposure to steam, or even by dipping in water for 10 min.

Failure Analysis of the Die-Attach in a Metal-Type Package

1996 ◽  
Author(s):  
J. Acki ◽  
A. Murakami ◽  
T. Akutsu ◽  
S. Matsuda ◽  
A. Maruyama ◽  
...  
Keyword(s):  
High Temperature ◽  
Alloy Layer ◽  
Storage Test ◽  
Power Mosfet ◽  
Package Design ◽  
Die Attach ◽  
Metal Type ◽  
High Temperature Storage ◽  
Space Projects ◽  
Temperature Storage

Abstract RECENTLY POWER MOSFETS have been used for satellite power supplies. NASDA has developed such a Power MOSFET for the space projects. It has a metal-type package, and the die is attached by Au-Si alloy to achieve high temperature operation (Tj=200°C). The fabricated device failure was detected thermal resistance tests after high temperature storage test at 200°C for 1000 hours. This failure is caused by the die peeling between the Au-Si eutectic alloy layer and the Ni plating surface on the Cu-W substrate. In this paper, we describe the failure mechanism and improvements in the package design and fabrication process. The newly developed power MOSFET for space use exhibits good performance in the high temperature storage test.

Component Attachment with Pressureless Sintering for 300°C Applications

2016 ◽  
Vol 2016 (HiTEC) ◽  
pp. 000226-000233
Author(s):  
Fang Yu ◽  
Jinzi Cui ◽  
Zhangming Zhou ◽  
R. Wayne Johnson ◽  
Michael C. Hamilton
Keyword(s):  
High Temperature ◽  
Thick Film ◽  
Cross Sections ◽  
High Power ◽  
Shear Force ◽  
Passive Component ◽  
Pressureless Sintering ◽  
High Temperature Electronics ◽  
Die Attach ◽  
The Mean

Abstract With an increased demand for high power and high temperature electronics, Ag sintering paste has been considered a promising Pb-free die attach material candidate for these applications. A large amount of research has been performed investigating pressure and pressureless Ag sintering for die attach. In this work, passive component (chip resistor) attachment with Ag sintering was explored. Due to termination geometry differences between resistors and die, different processing procedures and parameters were developed. For PtAu terminated resistors, the mean shear force of as-built samples on thick film Ag metallized substrates was 90 N, but dropped to 18.6 N after 1500 hours at 300°C. Formation of a dense Ag layer near the PtAu resistor termination and a void region near the thick film metallization was observed in cross-sections after 1000 hours at 300°C. For PdAg terminated resistors with a plated Ni/Au finish, the initial shear force results were low due to Ag diffusion along Au metallization surface. For PdAg terminated resistors with Ag thick film substrates, the initial shear force was approximately 60 N and remained in the range of 50–70 N during aging at 300°C for 1500 hours. A new thick film metallization (Au+Ag) was developed to enable the use of thick film Au interconnect metallization.

Component Attachment with Pressureless Ag Sintering for 300°C Applications

2016 ◽  
Vol 13 (4) ◽  
pp. 155-162
Author(s):  
Fang Yu ◽  
Jinzi Cui ◽  
Zhangming Zhou ◽  
R. Wayne Johnson ◽  
Michael C. Hamilton
Keyword(s):  
High Temperature ◽  
Thick Film ◽  
Cross Sections ◽  
High Power ◽  
Shear Force ◽  
Passive Component ◽  
High Temperature Electronics ◽  
Die Attach ◽  
The Mean

With an increased demand for high-power and high-temperature electronics, Ag sintering paste has been considered a promising Pb-free die-attach material candidate for these applications. Extensive research has been carried out investigating pressure and pressureless Ag sintering for die attach. In this work, passive component (chip resistor) attachment with Ag sintering was explored. Due to termination geometry differences between resistors and dies, different processing procedures and parameters were developed. For PtAu terminated resistors, the mean shear force of as-built samples on thick-film Ag metallized substrates was 90 N, but dropped to 18.6 N after 1,500 h at 300°C. Formation of a dense Ag layer near the PtAu resistor termination and a void region near the thick-film metallization was observed in cross sections after 1,000 h at 300°C. For PdAg terminated resistors with a plated Ni/Au finish, the initial shear force results were low due to Ag diffusion along Au metallization surface. For PdAg terminated resistors with Ag thick-film substrates, the initial shear force was ~60 N and remained in the range of 50–70 N during aging at 300°C for 1,500 h. A new thick-film metallization (Au + Ag) was developed to enable the use of thick-film Au interconnect metallization.

Nanoindentation of Sn3.0Ag0.5Cu/ENIG Solder Joint after High Temperature Storage

2016 ◽  
Vol 857 ◽  
pp. 40-43 ◽  
Author(s):  
Maria Abu Bakar ◽  
Azman Jalar ◽  
Roslina Ismail ◽  
Abdul Razak Daud
Keyword(s):  
High Temperature ◽  
Electroless Nickel ◽  
Solder Paste ◽  
Reflow Soldering ◽  
Micromechanical Properties ◽  
Electroless Nickel Immersion Gold ◽  
Reduced Modulus ◽  
High Temperature Storage ◽  
Free Solder ◽  
Temperature Storage

This study used nanoindentation technique in order to examine the micromechanical properties of Sn3.0Ag0.5Cu (SAC305) on Electroless Nickel Immersion Gold (ENIG) surface finished Cu substrate subjected to high temperature storage. Lead free solder paste of SAC305 were soldered on ENIG substrate by reflow soldering at 215 °C for 8 second. The soldered samples were exposed to high temperature storage at 180 °C for 0, 200, 400, 600, 800 and 1000 hours. Micromechanical properties show that the solder hardness is decreasing with the HTS time from 239.13 MPa for 0 hour to 178.96 MPa for 1000 hours while the reduce modulus results has increased from 62. 16 x 103 MPa for 0 hour to 82.13 x 103 MPa for 1000 hours. The value of hardness and reduced modulus from nanoindentation approach indicate the occurrence of plastic and elastic deformation throughout the test.

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