Fabrication of an RF-MEMS-Switch on a hybrid Si-Ceramic substrate

2016 ◽  
Vol 2016 (CICMT) ◽  
pp. 000118-000121
Author(s):  
S. Gropp ◽  
M. Fischer ◽  
A. Frank ◽  
C. Schäffel ◽  
J. Müller ◽  
...  

Abstract The integration of MEMS sensors, microelectronics and RF circuits including RF-MEMS is still a challenging task but becomes crucial for the Internet of Things. A wafer-level silicon-ceramic composite substrate (called SiCer, Silicon-on-Ceramics) allows new options in smart system integration. SiCer substrates combine the benefits of two different worlds of materials. The silicon substrate is a suitable material to build active MEMS devices such as switches and resonators. The ceramic substrate, a Low Temperature Cofired Ceramic (LTCC), is well-known for RF circuit integration including resistors, capacitors and coils. Both materials are co-sintered into a monolithically composite substrate. Chemical and physical modification of the silicon interface allows a low-pressure sintering and therefore new techniques for generating buried cavities at the bond interface. A carbon paste is applied on the LTCC via screen printing. After sintering, this results in a defined cavity. To demonstrate the advantages of the buried cavities within SiCer substrates the fabrication process of a RF-MEMS switch is shown. The switch is intended for a switching matrix to select frequency bands in a mobile LTE receiver. A parallel-plate electrostatic actuation with in-plane movement has been selected. This type of switch allows a large displacement range and a low actuation voltage can be achieved.

2006 ◽  
Vol 16 (11) ◽  
pp. 2281-2286 ◽  
Author(s):  
Jae-Hyoung Park ◽  
Hee-Chul Lee ◽  
Yong-Hee Park ◽  
Yong-Dae Kim ◽  
Chang-Hyeon Ji ◽  
...  

Author(s):  
Renu Sharma ◽  
Isha Yadav ◽  
Anupriya Katiyar ◽  
Milap Singh ◽  
Shaveta ◽  
...  

2006 ◽  
Vol E89-C (12) ◽  
pp. 1880-1887 ◽  
Author(s):  
Y.-T. SONG ◽  
H.-Y. LEE ◽  
M. ESASHI

2009 ◽  
Vol 153 (1) ◽  
pp. 114-119 ◽  
Author(s):  
Jongseok Kim ◽  
Sangwook Kwon ◽  
Heemoon Jeong ◽  
Youngtack Hong ◽  
Sanghun Lee ◽  
...  

The present paper aimed at designing, optimizing, and simulating the RF MEMS Switch which is stimulated electrostatically. The design of the switch is located on the CoplanarWaveguide (CPW) transmission line. The pull-in voltage of the switch was 2V and the axial residual stress of the proposed design was obtained at 23MPa. In order to design and optimize the geometric structure of the switch, the desired model was extracted based on the objective functions of the actuation voltage and the return loss up-state and also the isolation down-state using the mathematical programming. Moreover, the model was solved by the NSGA-II meta-heuristic algorithm in MATLAB software. In addition, the design requirements and the appropriate levels for designing the switch were obtained by presenting the Pareto front from the beam actuation voltage and also the return loss up-state and isolation down-state. Finally, the RF parameters of the switch were calculated as S11=-2.54dB and S21=-33.18dB at the working frequency of 40GHz by extracting the appropriate parameters of the switch design through simulating a switch designed by the COMSOL Multiphysics software 4.4a and the advanced design system (ADS).


Micromachines ◽  
2021 ◽  
Vol 13 (1) ◽  
pp. 37
Author(s):  
Kun Deng ◽  
Fuxing Yang ◽  
Yucheng Wang ◽  
Chengqi Lai ◽  
Ke Han

In this paper a high capacitance ratio and low actuation voltage RF MEMS switch is designed and fabricated for Ka band RF front-ends application. The metal-insulator-metal (MIM) capacitors is employed on a signal line to improve the capacitance ratio, which will not degrade the switch reliability. To reduce the actuation voltage, a low spring constant bending folding beam and bilateral drop-down electrodes are designed in the MEMS switch. The paper analyzes the switch pull-in model and deduces the elastic coefficient calculation equation, which is consistent with the simulation results. The measured results indicated that, for the proposed MEMS switch with a gap of 2 μm, the insertion loss is better than −0.5 dB and the isolation is more than −20 dB from 25 to 35 GHz with an actuation voltage of 15.8 V. From the fitted results, the up-state capacitance is 6.5 fF, down-state capacitance is 4.3 pF, and capacitance ratios is 162. Compared with traditional MEMS capacitive switches with dielectric material Si3N4, the proposed MEMS switch exhibits high on/off capacitance ratios of 162 and low actuation voltage.


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