Polymer-Based Hermetic Packaging for Flexible Micro Devices

2012 ◽  
Vol 2012 (DPC) ◽  
pp. 001139-001162
Author(s):  
Li-Anne Liew ◽  
Ching-Yi Lin ◽  
Y. C. Lee

In recent years, polymers have been widely adopted as a low-cost, light-weight and high-flexibility alternative to traditional silicon materials for MEMS. However, the majority of polymers do not provide hermetic protection because of their high moisture- and gas permeation rates. Yet, hermetic packaging is critical for many applications such as medical devices [1], RF MEMS [2] and micro heat pipes [3]. In particular, our group has been developing flexible thermal ground planes based on heat pipe technology [3] for advanced electronics cooling applications. Heat pipes require hermetic sealing, while flexibility requires the structural material to be polymer-based. Hermetic packaging methods for MEMS typically include welding, soldering [4], and various epoxies and polymers [1, 2, 5] to bond the parts in a package together. The bond interface is a major potential source of gas and moisture leakage. Although welds and solder joints offer effective hermetic seals, the bond interface is mechanically rigid. On the other hand, flexible bond materials like epoxies typically possess high moisture absorption rate and bonding strength degradation at high temperature [6] while polymers such as BCB [2] or LCP [7] either provide only semi-hermetic sealing or degrade at high temperature. We report a polymer-based hermetic packaging approach using fluorinated ethylene propylene (FEP), which possesses flexibility, high operating temperature compatibility (204°C), chemical resistance, and low water absorption rate. We report results of hermeticity tests in which FEP, solder, and epoxy were used to bond a copper-clad kapton “lid” onto a water-containing copper vessel which is then kept in an oven at 100 °C. The only path for water loss is through the bond interface. We show that the FEP-bonded test vehicles result in negligible water loss comparable to the solder-bonded containers, and far outperforming the epoxy-bonded containers. References: [1] G. Jiang and D. D. Zhou (Ed.), Implantable Neural Prostheses 2, (2010). [2] A Jourdain, P De Moor, K Baert, I DeWolf and H A C Tilmans, J. Micromech. Microeng.,15 (2005) S89–S96. [3] C.J. Oshman, B. Shi, C. Li, R. Yang, Y.C. Lee, G.P. Peterson, and V.M. Bright, J. Microelectromechanical Systems, 20, 2 (2011), 410–417. [4] T. Rude, J. Subramanian, J. Levin, D. Van Heerden, O. Knio, Proc. IMAPS 2005. [5] G. B. Tepolt, M. J. Meschera, J. J. LeBlanca, R. Lutwakb, M. Varghesec, Proc. of SPIE, Vol. 7592, 2010, 759207. [6] E. M. Petrie, Handbook of Adhesives and Sealants, 1st Ed. (McGraw-Hill, 1999), p. 707. [7] C.-D. Ghiu, S. Dalmia, J. Vickers, L. Carastro, W. Czakon, V. Sundaram, G. White, Proc. 1st European Microwave Integrated Circuits Conference, 2006, pp.545–547.

2012 ◽  
Vol 52 (9-10) ◽  
pp. 1966-1970 ◽  
Author(s):  
R. Pelzer ◽  
M. Nelhiebel ◽  
R. Zink ◽  
S. Wöhlert ◽  
A. Lassnig ◽  
...  

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 001221-001252 ◽  
Author(s):  
Kei Murayama ◽  
Mitsuhiro Aizawa ◽  
Mitsutoshi Higashi

The bonding technique for High density Flip Chip(F.C.) packages requires a low temperature and a low stress process to have high reliability of the micro joining ,especially that for sensor MEMS packages requires hermetic sealing so as to ensure their performance. The Transient Liquid Phase (TLP) bonding, that is a kind of diffusion bonding is a technique that connects the low melting point material such as Indium to the higher melting point metal such as Gold by the isothermal solidification and high-melting-point intermetallic compounds are formed. Therefore, it is a unique joining technique that can achieve not only the low temperature bonding and also the high temperature reliability. The Gold-Indium TLP bonding technique can join parts at 180 degree C and after bonding the melting point of the junction is shifted to more than 495 degree C, therefore itfs possible to apply the low temperature bonding lower than the general use as a lead free material such as a SAC and raise the melting point more than AuSn solder which is used for the high temperature reliability usage. Therefore, the heat stress caused by bonding process can be expected to be lowered. We examined wafer bonding and F.C bonding plus annealing technique by using electroplated Indium and Gold as a joint material. We confirmed that the shear strength obtained at the F.C. bonding plus anneal technique was equal with that of the wafer bonding process. Moreover, it was confirmed to ensure sufficient hermetic sealing in silicon cavity packages that had been bonded at 180 degree C. And the difference of the thermal stress that affect to the device by the bonding process was confirmed. In this paper, we report on various possible application of the TLP bonding.


2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000058-000067 ◽  
Author(s):  
Torleif André Tollefsen ◽  
Andreas Larsson ◽  
Knut Aasmundtveit

Au-Sn solid-liquid-interdiffusion (SLID) bonding is a novel and promising interconnect technology for high temperature (HT) applications. In combination with Silicon Carbide (SiC) devices, Au-Sn SLID has the potential of being a key technology for the next generation of innovative, cost effective and environmentally friendly drilling and well intervention systems for the oil industry. However, limited knowledge about Au-Sn SLID bonding for combined HT and high power applications is a major restriction to fully realize the high temperature potential of SiC devices. This paper presents a comprehensive study of fluxless Au-Sn SLID bonding. Two different processing techniques – electroplating of Au / Sn layers and sandwiching of eutectic Au-Sn preform between electroplated Au layers – have been studied in a simplified metallization system. The latter process was further investigated in two different Cu / Si3N4 / Cu / NiP / Au-Sn / Ni / Ni2Si / SiC systems (different Au-layer thickness). Die shear tests and cross-sections have been performed on “as bonded”, thermally cycled and thermally aged samples to characterize the bonding properties associated with the different processing techniques, metallization schemes and environmental stress tests. A uniform Au-rich bond interface is produced (the ζ phase with a melting point of 522 °C). The importance of excess Au on both substrate and chip side in the final bond is demonstrated. It is shown that Au-Sn SLID can absorb thermo-mechanical stresses induced by large CTE mismatches (up to 12 ppm/K) in a packaging system during HT thermal cycling. The bonding strength of Au-Sn SLID is shown to be superb, exceeding 78 MPa. Importantly, Au-Sn SLID is shown to be an excellent interconnect technology for HT packaging.


1989 ◽  
Vol 111 (3) ◽  
pp. 605-610 ◽  
Author(s):  
Flavio Dobran

The design of high-performance heat pipes requires optimization of heat transfer surfaces and liquid and vapor flow channels to suppress the heat transfer operating limits. In the paper an analytical model of the vapor flow in high-temperature heat pipes is presented, showing that the axial heat transport capacity limited by the sonic heat transfer limit depends on the working fluid, vapor flow area, manner of liquid evaporation into the vapor core of the evaporator, and lengths of the evaporator and adiabatic regions. Limited comparisons of the model predictions with data of the sonic heat transfer limits are shown to be very reasonable, giving credibility to the proposed analytical approach to determine the effect of various parameters on the axial heat transport capacity. Large axial heat transfer rates can be achieved with large vapor flow cross-sectional areas, small lengths of evaporator and adiabatic regions or a vapor flow area increase in these regions, and liquid evaporation in the evaporator normal to the main flow.


2017 ◽  
Vol 120 ◽  
pp. 140-148 ◽  
Author(s):  
Nina Hack ◽  
Simon Unz ◽  
Michael Beckmann

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