Excitonic light emission decay time measurements in moderatelyδ-doped GaAs/AlAs multiple quantum wells

2016 ◽  
Vol 55 (4) ◽  
Author(s):  
Jurgis Kundrotas ◽  
Aurimas Čerškus ◽  
Gintaras Valušis ◽  
Edmund Harold Linfield ◽  
Eric Johannessen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Decay Time ◽  
Light Emission ◽  
Single Photon ◽  
Free Exciton ◽  
Photon Counting ◽  
Reduction Rate ◽  
Decay Rates ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

The radiative recombination rate of moderately dopedn-type andp-type GaAs/AlAs multiple quantum wells using a timecorrelated single photon counting system is presented. The experimental study has been obtained within a wide temperature range from liquid helium to room temperature and the work has focused on identifying photoluminescence decay rates based on freeexciton recombinations. It was found that the free exciton decay time was reduced in doped multiple GaAs/AlAs quantum wells, and that the reduction rate depends on both the concentration and doping type.

InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate

2011 ◽  
Vol 679-680 ◽  
pp. 801-803
Author(s):  
Ji Sheng Han ◽  
Sima Dimitrjiev ◽  
Li Wang ◽  
Alan Iacopi ◽  
Qu Shuang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Light Emission ◽  
Multiple Quantum Well ◽  
Multiple Quantum Wells ◽  
Structural Quality ◽  
Multiple Quantum ◽  
Si Substrate ◽  
Si Substrates

Gallium nitrides are primarily used for their excellent light emission properties. GaN LEDs are mostly grown on foreign substrates, essentially sapphire and SiC, but more recently, also on Si substrates. In this paper, we will demonstrate that the high structural quality of InGaN/GaN multiple quantum wells can be deposited on 3C-SiC/Si (111) substrate using MOCVD. This demonstrates that 3C-SiC/Si is a promising template for the epitaxial growth of InGaN/GaN multiple quantum wells for LEDs.

Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells

2001 ◽  
Vol 79 (16) ◽  
pp. 2594-2596 ◽  
Author(s):  
H. K. Cho ◽  
J. Y. Lee ◽  
N. Sharma ◽  
C. J. Humphreys ◽  
G. M. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Characteristics of polarization emission in a-plane GaN-based multiple quantum wells structures

2012 ◽  
Vol 1432 ◽  
Author(s):  
Chiao-Yun Chang ◽  
Huei-Min Huang ◽  
Tien-Chang Lu ◽  
Hao-Chung Kuo ◽  
Shing-Chung Wang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Quantum Confinement Effect ◽  
Polarized Light ◽  
Peak Position ◽  
Multiple Quantum Wells ◽  
Experimental Result ◽  
Multiple Quantum ◽  
Polarization Ratio ◽  
Quantum Well Width

ABSTRACTWe studied the polarization-dependent photoluminescence (PL) of a-plane GaN /AlGaN multiple quantum wells (MQWs) grown on r-plane sapphire substrate with the various well width from 1.5 to 7.33 nm. To clarify the reasons of light emission polarization properties, we applied the 6×6 k‧p model to simulate the E-k dispersion relation and the wave functions to obtain the polarization optical transitions. According to the experimental result, the PL emission peak position exhibits a red-shifted with increasing well width, due to the reduction of the quantum confinement effect. The polarization ratio of a-plane GaN/AlGaN MQWs increased from 0.236 to 0.274 with increasing the quantum well width. This phenomenon is believed to be that y-polarized light emission gradually dominates the PL spectrum and thus enhances the polarization ratio.

Efficient blue light emission from In_016Ga_084N/GaN multiple quantum wells excited by 248-μm femtosecond laser pulses

2014 ◽  
Vol 39 (12) ◽  
pp. 3555 ◽  
Author(s):  
Mao-Hui Yuan ◽  
Hui Li ◽  
Jian-Hua Zeng ◽  
Hai-Hua Fan ◽  
Qiao-Feng Dai ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Quantum Wells ◽  
Blue Light ◽  
Light Emission ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Blue Light Emission
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