Dynamics of free carriers – neutral impurity related optical transitions in Be and Si δ-doped GaAs/AlAs multiple quantum wells: Fractional-dimensional space approach

2015 ◽  
Vol 54 (4) ◽  
Author(s):  
Jurgis Kundrotas ◽  
Aurimas Čerškus ◽  
Gintaras Valušis ◽  
Edmund H. Linfield ◽  
Erik Johannessen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Dimensional Space ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optical Transitions ◽  
Free Carriers ◽  
Neutral Impurity ◽  
Space Approach

Impurity-induced Huang–Rhys factor in beryllium δ-doped GaAs/AlAs multiple quantum wells: fractional-dimensional space approach

2007 ◽  
Vol 22 (9) ◽  
pp. 1070-1076 ◽  
Author(s):  
J Kundrotas ◽  
A Čerškus ◽  
S Ašmontas ◽  
G Valušis ◽  
M P Halsall ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Dimensional Space ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Rhys Factor ◽  
Space Approach

Impurity-related photoluminescence line shape asymmetry in GaAs/AlAs multiple quantum wells: Fractional-dimensional space approach

2010 ◽  
Vol 107 (9) ◽  
pp. 093109 ◽  
Author(s):  
Jurgis Kundrotas ◽  
Aurimas Čerškus ◽  
Gintaras Valušis ◽  
Agne Johannessen ◽  
Erik Johannessen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Line Shape ◽  
Dimensional Space ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Line ◽  
Space Approach

Excitonic and impurity-related optical transitions in Beδ-dopedGaAs∕AlAsmultiple quantum wells: Fractional-dimensional space approach

2005 ◽  
Vol 72 (23) ◽  
Author(s):  
J. Kundrotas ◽  
A. Čerškus ◽  
S. Ašmontas ◽  
G. Valušis ◽  
B. Sherliker ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Dimensional Space ◽  
Optical Transitions ◽  
Space Approach

Optical Transitions and Recombination Lifetimes in GaN and InGaN Epilayers, and InGaN/GaN and GaN/AlGaN Multiple Quantum Wells

1996 ◽  
Vol 449 ◽  
Author(s):  
M. Smith ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
A. Khan ◽  
Q. Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Chemical Vapor ◽  
Multiple Quantum Wells ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Optical Transitions ◽  
Time Resolved ◽  
Metal Organic ◽  
Recombination Lifetimes ◽  
Time Resolved Photoluminescence

ABSTRACTTime-resolved photoluminescence (PL) has been employed to study the optical transitions and their dynamical processes in GaN and InxGa1-xN epilayers, and GaN/GaN and GaN/ALxGa1-xN multiple quantum wells (MQW). We compare the results from both metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) grown samples. In addition, results are also compared with GaAs/ALxGa1-xAs MQW. It was found for all samples that the low temperature emission lines were dominated by radiative recombination transitions of either localized or free excitons, which demonstrates the high quality and purity of these III-nitride materials.

Optical transitions in GaN/AlxGa1−xN multiple quantum wells grown by molecular beam epitaxy

1996 ◽  
Vol 69 (17) ◽  
pp. 2453-2455 ◽  
Author(s):  
M. Smith ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
A. Salvador ◽  
A. Botchkarev ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optical Transitions
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