scholarly journals Relaxation of conductivity in AlGaN/AlN/GaN two-dimensional electron gas at high electric fields

2007 ◽  
Vol 47 (4) ◽  
pp. 485-489 ◽  
Author(s):  
L. Ardaravičius
2015 ◽  
Vol 24 (01n02) ◽  
pp. 1520003
Author(s):  
M. Pakmehr ◽  
C. Brüne ◽  
H. Buhmann ◽  
L. W. Molenkamp ◽  
B. D. McCombe

HgTe quantum wells with a gapped single Dirac cone electronic dispersion relation have been investigated by THz magneto-photoresponse (PR) and magneto-transport measurements. The QW sample has the conventional band alignment with the well thickness (6.1 nm) slightly smaller than the critical thickness for the topological phase transition. The effective gap of this structure is roughly 10 meV, and the large sheet density ([Formula: see text] m-2) of the two-dimensional electron gas (2DEG) results in a very large Fermi energy ([Formula: see text] meV). We have found several interesting effects at these high densities. In this paper we focus on an observed beating of quantum oscillations in the PR signal (at 1.83 THz) and compare it with direct measurements of oscillations in the longitudinal magneto-resistance (Rxx). The mechanism for the PR is cyclotron resonance absorption heating of the electrons (an electron bolometric effect). We attribute the beating to Rashba splitting of the spin states, which is barely observable in direct Rxx measurements under strong gate-induced electric fields.


2003 ◽  
Vol 34 (5-8) ◽  
pp. 521-523 ◽  
Author(s):  
L. Zamora-Peredo ◽  
A. Guillen-Cervantes ◽  
Z. Rivera-Alvarez ◽  
M. López-López ◽  
A.G. Rodrı́guez-Vázquez ◽  
...  

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