Electron Optics Simulations of a CNT-based X-ray Source Operating at a Low Gate Voltage

2015 ◽  
Vol 65 (2) ◽  
pp. 141-146
Author(s):  
Tae Dong LEE* ◽  
Seong-Ryong RYU ◽  
Yong C. KIM ◽  
In T. HAN
Keyword(s):  
Gate Voltage ◽  
Electron Optics ◽  
X Ray

Electron optics simulations of CNT-based x-ray source operating at low gate voltage

2012 ◽  
Author(s):  
Tae Dong Lee ◽  
Seong-Ryong Ryu ◽  
June Hee Oh ◽  
Han-Sol Park ◽  
Se-Hyun Woo ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Electron Optics ◽  
X Ray

INSTRUMENTATION, ELECTRON OPTICS AND X-RAY SPECTROSCOPY

1984 ◽  
Vol 45 (C2) ◽  
pp. C2-149-C2-154 ◽  
Author(s):  
T. Mulvey
Keyword(s):  
Electron Optics ◽  
X Ray

The Application of Scanning Electron Microscopy and Energy Dispersive X-Ray Analysis to the Examination of Forensic Paint Samples

1972 ◽  
Vol 16 ◽  
pp. 19-26 ◽  
Author(s):  
R. Wilson ◽  
G. Judd
Keyword(s):  
Sem Analysis ◽  
Energy Dispersive ◽  
Electron Optics ◽  
X Ray ◽  
Sem Image ◽  
Automotive Paint ◽  
Dispersive System ◽  
Electron Image ◽  
Many Sources

AbstractElectron optics techniques have been applied to the examination of various evidence materials common to forensic science. Vehicular paint fragments, a common evidence material, possess topographical features suitable for SEM analysis and composition variations in the form of chemically distinct layers and surface contaminant particles which can be characterized using energy dispersive X-ray analysis. The ability to analyze paint samples in terms of both topography and composition presents the potential of an extremely valuable tool for forensic investigators.Over thirty automotive paint samples from many sources were examined in this study, using either the secondary electron image of the SEM or the SEM image combined with concurrent X-ray analysis by an energy dispersive System. Topographical pictures and X-ray spectra were recorded and comparisons between samples were made. Additional characterization of specimens was attempted through the analysis of individual paint layers.The data obtained was used to group the paint samples into categories used for identification of the sample source. This information is valuable to several types of criminal investigation.

Electron-Probe X-Ray Spectrograph: Design, Evaluation, and Application

1961 ◽  
Vol 5 ◽  
pp. 527-537
Author(s):  
J. D. Brown ◽  
J. W. Thatcher ◽  
W. J. Campbell
Keyword(s):  
Stainless Steel ◽  
Electron Probe ◽  
Vacuum Chamber ◽  
Steel Sample ◽  
Vacuum System ◽  
Electron Optics ◽  
Stainless Steel Sample ◽  
X Ray ◽  
Long Wavelength ◽  
Operational Characteristics

AbstractThe Bureau of Mines purchased the electron optics, vacuum system, and sample stage assembly for the electron-probe X-ray spectrograph and designed and built the two reflection and two transmission scanning curved-crystal spectrometers. The reflection spectrometers were placed in a vacuum chamber for measurements of long-wavelength X-radiation. Operational characteristics of this spectrograph were determined. A low-alloy stainless-steel sample containing 5 wt. % depleted uranium and a stainless-steel sample containing 20 wt. % gadolinium were analyzed.

Large-area x-ray sensitive video camera: design of electron optics

1997 ◽  
Author(s):  
Gendi Pang ◽  
Randy P. Luhta ◽  
John A. Rowlands
Keyword(s):  
Video Camera ◽  
Electron Optics ◽  
Large Area ◽  
X Ray ◽  
Camera Design ◽  
Area X

scholarly journals Parasitic Conduction Response to X-ray Radiation in Unstrained and Strained Triple-Gate SOI MuGFETs

2014 ◽  
Vol 9 (2) ◽  
pp. 97-102
Author(s):  
Fernando F. Teixeira ◽  
Caio C. M. Bordallo ◽  
Marcilei A. Guazzelli ◽  
Paula Ghedini Der Agopian ◽  
João Antonio Martino ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Gate Voltage ◽  
Drain Current ◽  
X Rays ◽  
Back Gate ◽  
X Ray ◽  
Dose Rates ◽  
Buried Oxide ◽  
Opposite Trend

In this work, the X-ray irradiation impact on the back gate conduction and drain current for Triple-Gate SOI FinFETs is investigated for strained and unstrained devices. Both types (P and N) of transistors were analyzed. Since X-rays promote trapped positive charges in the buried oxide, the second interface threshold voltage shifts to lower gate voltage. The performance of n-channel devices presented a strong degradation when submitted to X-rays, while for p-channel devices the opposite trend was observed. Two different dose rates were analyzed.

Advanced electron optics for micro- and nano-analysis in the TEM

1994 ◽  
Vol 52 ◽  
pp. 492-493
Author(s):  
G. Benner ◽  
R. Bauer ◽  
W. Probst ◽  
E. Weimer ◽  
J.-P. Martin
Keyword(s):  
Signal To Noise Ratio ◽  
High Sensitivity ◽  
Element Distribution ◽  
Objective Lens ◽  
Electron Optics ◽  
X Ray ◽  
Distribution Maps ◽  
Illumination System ◽  
Transmission Electron ◽  
Operation Flexibility

1. IntroductionIn the materials sciences as well as in the life sciences energy-dispersive x-ray microanalysis (EDX) in the transmission electron microscope (TEM) is now established as a routine investigation method allowing high-sensitivity qualitative and quantitative element detection. The accuracy of the results obtained and the measurement time needed are largely determined by the following properties of the TEM used: shape of the objective lens pole-piece and design of the illumination system, collimation of the beam path and operation flexibility of the illumination system.2. Optimized X-ray detectionIn the EM 910 the design concept of the objective lens allows the x-ray detector to be placed closer to the specimen than usual (Fig. 1). Therefore an extremely high solid angle (i. e. 0.192 sr) of the x-ray signal can be intercepted by a 30 mm2-detector at a take-off angle of 20°. As a result, x-ray spectra can be acquired with a high countrate and a clearly improved signal-to-noise ratio. Element distribution maps with much improved information density can be acquired in the usual registration times.

Extreme SEM

2001 ◽  
Vol 7 (S2) ◽  
pp. 394-395
Author(s):  
E D Boyes
Keyword(s):  
Low Voltage ◽  
Chemical Imaging ◽  
Vacuum System ◽  
Electron Optics ◽  
Innovative Design ◽  
X Ray ◽  
Voltage Imaging ◽  
Electron Image ◽  
Resolution Imaging ◽  
Electron Imaging

New analytical methods have been implemented with novel instrumentation designed to extend, to explore and to exploit an expanded performance envelop for high resolution imaging, EDX chemical microanalysis and chemical imaging with robust and representative bulk samples in a scanning electron microscope (SEM). A key contribution is the integrated and innovative design of the in-lens electron optics, sample holders, detectors including for EDX, specimen chamber and vacuum system. Each component has been improved individually over previous practice and they have been made to work together much better, especially with respect to combining advanced electron imaging at low voltages with efficient x-ray analysis and mapping.Compared to a conventional out-of-lens/semi-in-lens FESEM the secondary electron image (SEI) resolution at the widely used low voltage of 1 kV is improved by a factor of almost 2x to <1.5nm and this facilitates low voltage imaging at primary magnifications of 250,000x (Fig.1) or more.

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