Effects of a Low Dose of Gamma Radiation on the Morphology, and the Optical and the Electrical Properties of an ITO Thin Film as an Electrode for Solar Cell Applications

2018 ◽  
Vol 72 (5) ◽  
pp. 561-569 ◽  
Author(s):  
Shaida Anwer Kakil ◽  
Barzan Nehmat Sabr ◽  
Lary Slewa Hana ◽  
Tariq Abdul-Hameed Abbas ◽  
Sarwin Yaseen Hussin
2001 ◽  
Vol 80-81 ◽  
pp. 145-150 ◽  
Author(s):  
J. Löffler ◽  
R. Groenen ◽  
P.M. Sommeling ◽  
J. Lindén ◽  
M.C.M. van de Sanden ◽  
...  

2021 ◽  
Vol 224 ◽  
pp. 110989
Author(s):  
Anna Koprek ◽  
Pawel Zabierowski ◽  
Marek Pawlowski ◽  
Luv Sharma ◽  
Christoph Freysoldt ◽  
...  

2011 ◽  
Vol 1352 ◽  
Author(s):  
Jiguang Li ◽  
Lin Pu ◽  
Mool C. Gupta

ABSTRACTRecently, few tens of nanometer thin films of TiOx have been intensively studied in applications for organic solar cells as optical spacers, environmental protection and hole blocking. In this paper we provide initial measurements of optical and electrical properties of TiOx thin films and it’s applications in solar cell and sensor devices. The TiOx material was made through hydrolysis of the precursor synthesized from titanium isopropoxide, 2-methoxyethanol, and ethanolamine. The TiOx thin films of thickness between 20 nm to 120 nm were obtained by spin coating process. The refractive index of TiOx thin films were measured using an ellipsometric technique and an optical reflection method. At room temperature, the refractive index of TiOx thin film was found to be 1.77 at a wavelength of 600 nm. The variation of refractive index under various thermal annealing conditions was also studied. The increase in refractive index with high temperature thermal annealing process was observed, allowing the opportunity to obtain refractive index values between 1.77 and 2.57 at a wavelength 600 nm. The refractive index variation is due to the TiOx phase and density changes under thermal annealing.The electrical resistance was measured by depositing a thin film of TiOx between ITO and Al electrode. The electrical resistivity of TiOx thin film was found to be 1.7×107 Ω.cm as measured by vertical transmission line method. We have also studied the variation of electrical resistivity with temperature. The temperature coefficient of electrical resistance for 60 nm TiOx thin film was demonstrated as - 6×10-3/°C. A linear temperature dependence of resistivity between the temperature values of 20 – 100 °C was observed.The TiOx thin films have been demonstrated as a low cost solution processable antireflection layer for Si solar cells. The results indicate that the TiOx layer can reduce the surface reflection of the silicon as low as commonly used vacuum deposited Si3N4 thin films.


2015 ◽  
Vol 773-774 ◽  
pp. 647-651
Author(s):  
Noor Sakinah Khalid ◽  
Siti Harwani Ishak ◽  
Mohd Khairul Ahmad

Titanium oxide (TiO2) thin films were deposited onto glass substrates by spray pyrolysis method. The thin films were deposited at three different annealing time; 1, 5 and 10 hours at 400°C. The structural and electrical properties were characterized using FESEM and I-V characteristic. Polycrystalline thin film with anatase crystal structure, as evidenced from X-ray diffraction pattern, was obtained with major reflection along (101). Electrical properties have been studied by means of electrical resistivity. The dark resistivity had been measured as a function of the film thickness, d. The resistivity of samples had been found to decrease with decreasing thickness. Thus, TiO2 is one of the most promising candidates for relatively low cost, simple manufacture for solar cell.


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