Effect of vacuum thermal annealing on a molybdenum bilayer back contact deposited by radio-frequency magnetron sputtering for chalcogenide- and kesterite-based solar cells

2017 ◽  
Vol 71 (12) ◽  
pp. 968-973 ◽  
Author(s):  
Xiaolei Liu ◽  
Hongtao Cui ◽  
Xiaojing Hao ◽  
Shujuan Huang ◽  
Gavin Conibeer
Keyword(s):  
Solar Cells ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Thermal Annealing ◽  
Radio Frequency Magnetron ◽  
Back Contact ◽  
Radio Frequency Magnetron Sputtering

Effect of deposition pressure on the structural and optical properties of Ga2O3films obtained by thermal post-crystallization

CrystEngComm ◽  
2018 ◽  
Vol 20 (1) ◽  
pp. 133-139 ◽  
Author(s):  
Yikai Liao ◽  
Shujie Jiao ◽  
Shaofang Li ◽  
Jinzhong Wang ◽  
Dongbo Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Thermal Annealing ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Structural And Optical Properties ◽  
Deposition Pressure ◽  
Amorphous Thin Films

β-Ga2O3films have been obtained by thermal annealing of amorphous thin films that were deposited by radio frequency magnetron sputtering.

Thermal stability of post-growth-annealed Ga-doped MgZnO films grown by the RF sputtering method

2014 ◽  
Vol 1675 ◽  
pp. 41-44
Author(s):  
Kuang-Po Hsueh ◽  
Po-Wei Cheng ◽  
Wen-Yen Lin ◽  
Hsien-Chin Chiu ◽  
Hsiang-Chun Wang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Thermal Annealing ◽  
Rf Sputtering ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Transparent Contact

ABSTRACTA radio-frequency magnetron sputtering technique and subsequent rapid thermal annealing (RTA) at 600, 700, 800, and 900 °C were implemented to grow high-quality Ga-doped MgxZn1-xO (GMZO) epi-layers. The GMZO films were deposited using a radio-frequency magnetron sputtering system and a 4 inch ZnO/MgO/Ga2O3 (75/20/5 wt %) target. The Hall results, X-ray diffraction (XRD), and transmittance were determined and are reported in this paper. The Hall results indicated that the increase in mobility was likely caused by the improved crystallization in the GMZO films after thermal annealing. The XRD results revealed that MgxZn1-xO (111) and MgO2 (200) peaks were obtained in the GMZO films. The absorption edges of the as-grown and annealed GMZO films shifted toward the short wavelength of 373 nm at a transmittance of 90%. According to these results, GMZO films are feasible for forming transparent contact layers for near-ultraviolet light-emitting diodes.

The Interfacial Characteristics of Ba0.6Sr0.4TiO3 Films Deposited by Radio Frequency Magnetron Sputtering

2007 ◽  
Vol 336-338 ◽  
pp. 374-376
Author(s):  
Jia Xuan Liao ◽  
C.R. Yang ◽  
J.H. Zhang ◽  
H. Chen ◽  
C.L. Fu ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Thermal Annealing ◽  
Transition Layer ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Si Substrates ◽  
Bst Films ◽  
Interfacial Characteristics

Ba0.6Sr0.4TiO3 (BST) thin films deposited on Pt/Ti/SiO2/Si substrates by radio frequency magnetron sputtering and crystallized by rapid thermal annealing (RTA) exhibit much thinner BST/Pt interfacial transition layer and higher dielectric properties than the films crystallized by conventional thermal annealing (CTA). HRTEM observations show that the transition layer is 2-3nm thick for RTA and 4-5nm thick for CTA. XPS investigations display that the transition layer is composed of perovskited BST phase and non-perovskited BST phase, and RTA corresponds to much less non-perovskited BST phase than CTA. The reason for non-perovskited BST phase and the dielectric properties of BST films are also presented.

scholarly journals Influence of Annealing Temperature on the Characteristics of Ti-Codoped GZO Thin Solid Film

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Tao-Hsing Chen ◽  
Tzu-Yu Liao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering

This study utilizes radio frequency magnetron sputtering (RF sputtering) to deposit GZO transparent conductive film and Ti thin film on the same corning glass substrate and then treats GZO/Ti thin film with rapid thermal annealing. The annealing temperatures are 300°C , 500°C, and 550°C, respectively. Ti:GZO transparent conductive oxide (TCO) thin films are deposited on glass substrates using a radio frequency magnetron sputtering technique. The thin films are then annealed at temperatures of 300°C, 500°C, and 550°C, respectively, for rapid thermal annealing. The effects of the annealing temperature on the optical properties, resistivity, and nanomechanical properties of the Ti:GZO thin films are then systematically explored. The results show that all of the annealed films have excellent transparency (~90%) in the visible light range. Moreover, the resistivity of the Ti:GZO films reduces with an increasing annealing temperature, while the carrier concentration and Hall mobility both increase. Finally, the hardness and Young’s modulus of the Ti:GZO thin films are both found to increase as the annealing temperature is increased.

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