Effects of channel thickness on oxide thin film transistor with double-stacked channel layer

2017 ◽  
Vol 71 (9) ◽  
pp. 561-564 ◽  
Author(s):  
Kimoon Lee ◽  
Yong-Hoon Kim ◽  
Sung-Min Yoon ◽  
Jiwan Kim ◽  
Min Suk Oh
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Channel Layer ◽  
Channel Thickness

Influence of the channel layer thickness on electrical properties of indium zinc oxide thin-film transistor

2010 ◽  
Vol 87 (10) ◽  
pp. 2019-2023 ◽  
Author(s):  
Ai Hua Chen ◽  
Hong Tao Cao ◽  
Hai Zhong Zhang ◽  
Ling Yan Liang ◽  
Zhi Min Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Layer Thickness ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Channel Layer ◽  
Indium Zinc Oxide

scholarly journals High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer

Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2145 ◽  
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
High Performance ◽  
Thin Film Transistor ◽  
Three Dimensional ◽  
Random Access ◽  
Oxide Thin Film ◽  
Amorphous Sio2 ◽  
Sio2 Substrate ◽  
Channel Layer

Metal-oxide thin-film transistors (TFTs) have been implanted for a display panel, but further mobility improvement is required for future applications. In this study, excellent performance was observed for top-gate coplanar binary SnO2 TFTs, with a high field-effect mobility (μFE) of 136 cm2/Vs, a large on-current/off-current (ION/IOFF) of 1.5 × 108, and steep subthreshold slopes of 108 mV/dec. Here, μFE represents the maximum among the top-gate TFTs made on an amorphous SiO2 substrate, with a maximum process temperature of ≤ 400 °C. In contrast to a bottom-gate device, a top-gate device is the standard structure for monolithic integrated circuits (ICs). Such a superb device integrity was achieved by using an ultra-thin SnO2 channel layer of 4.5 nm and an HfO2 gate dielectric with a 3 nm SiO2 interfacial layer between the SnO2 and HfO2. The inserted SiO2 layer is crucial for decreasing the charged defect scattering in the HfO2 and HfO2/SnO2 interfaces to increase the mobility. Such high μFE, large ION, and low IOFF top-gate SnO2 devices with a coplanar structure are important for display, dynamic random-access memory, and monolithic three-dimensional ICs.

Laser annealing of metal oxide thin film transistor

2020 ◽  
Vol 35 (12) ◽  
pp. 1211-1221
Author(s):  
Hong-long NING ◽  
◽  
Yu-xi DENG ◽  
Jian-lang HUANG ◽  
Zi-long LUO ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film

scholarly journals Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 200
Author(s):  
Do Won Kim ◽  
Hyeon Joong Kim ◽  
Changmin Lee ◽  
Kyoungdu Kim ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Precursor Concentration ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Si Substrates ◽  
Channel Layer ◽  
Active Channel

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

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