Near-band-edge photoluminescence from ZnO film: Negative thermal quenching and role of adsorbed oxygen

2014 ◽  
Vol 64 (1) ◽  
pp. 1-5 ◽  
Author(s):  
Vadim Sh. Yalishev ◽  
Shavkat U. Yuldashev ◽  
Khusan T. Igamberdiev ◽  
Tae Won Kang ◽  
Bae Ho Park
Keyword(s):  
Thermal Quenching ◽  
Band Edge ◽  
Adsorbed Oxygen ◽  
Near Band Edge ◽  
Zno Film

Enhancement of near-band edge photoluminescence of ZnO film buffered with TiN

2013 ◽  
Vol 538 ◽  
pp. 71-77 ◽  
Author(s):  
A. Achour ◽  
K. Ait Aissa ◽  
M. Mbarek ◽  
K. El Hadj ◽  
N. Ouldhamadouche ◽  
...  
Keyword(s):  
Band Edge ◽  
Near Band Edge ◽  
Zno Film

The role of impurity bands and electron–phonon interaction in formation of near-band-edge PL spectra of compensated ZnSe

2000 ◽  
Vol 214-215 ◽  
pp. 567-571 ◽  
Author(s):  
A.L Gurskii ◽  
S.V Voitikov ◽  
H Hamadeh ◽  
H Kalisch ◽  
M Heuken ◽  
...  
Keyword(s):  
Band Edge ◽  
Near Band Edge ◽  
Phonon Interaction ◽  
Pl Spectra ◽  
Electron Phonon Interaction ◽  
Impurity Bands

Role of defects in modulating the near band edge emissions of sub-micron ZnO crystals

2020 ◽  
Vol 109 ◽  
pp. 110348 ◽  
Author(s):  
Prashant A. Borade ◽  
Tushar Sant ◽  
Anisha Gokarna ◽  
Kapil U. Joshi ◽  
Rahul P. Panat ◽  
...  
Keyword(s):  
Band Edge ◽  
Near Band Edge

scholarly journals Electrophotoluminescence of sol-gel derived ZnO film: Effect of electric field on near-band-edge photoluminescence

2009 ◽  
Vol 17 (14) ◽  
pp. 11434 ◽  
Author(s):  
Peiliang Chen ◽  
Xiangyang Ma ◽  
Yuanyuan Zhang ◽  
Dongsheng Li ◽  
Deren Yang
Keyword(s):  
Electric Field ◽  
Sol Gel ◽  
Band Edge ◽  
Near Band Edge ◽  
Zno Film

Temperature and Polarization Dependence of the Near-Band-Edge Photoluminescence in a Non-Polar ZnO Film Grownby Using Molecular Beam Epitaxy

2008 ◽  
Vol 53 (1) ◽  
pp. 288-291 ◽  
Author(s):  
Yoon Sung Nam ◽  
Sang Wook Lee ◽  
K. S. Baek ◽  
S. K. Chang ◽  
Ji-Wook Ryu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Polarization Dependence ◽  
Band Edge ◽  
Near Band Edge ◽  
Zno Film

Enhancement of the near-band-edge photoluminescence of ZnO nanowires: Important role of hydrogen incorporation versus plasmon resonances

2011 ◽  
Vol 98 (13) ◽  
pp. 131111 ◽  
Author(s):  
A. Dev ◽  
J. P. Richters ◽  
J. Sartor ◽  
H. Kalt ◽  
J. Gutowski ◽  
...  
Keyword(s):  
Zno Nanowires ◽  
Band Edge ◽  
Near Band Edge ◽  
Hydrogen Incorporation ◽  
Plasmon Resonances

Near‐band‐edge absorption and positron trapping under illumination in semi‐insulating GaAs: Role of As vacancies

1995 ◽  
Vol 66 (19) ◽  
pp. 2534-2536 ◽  
Author(s):  
C. Le Berre ◽  
C. Corbel ◽  
R. Mih ◽  
M. R. Brozel ◽  
S. Tüzemen ◽  
...  
Keyword(s):  
Band Edge ◽  
Near Band Edge ◽  
Edge Absorption ◽  
Positron Trapping

scholarly journals Enhancement of the near-band-edge electroluminescence from the active ZnO layer in the ZnO/GaN-based light emitting diodes using AlN-ZnO/ZnO/AlN-ZnO double heterojunction structure

2021 ◽  
Author(s):  
Bo-Rui Huang ◽  
Kui-Shou You ◽  
Kai-Chao Yang ◽  
Day-Shan Liu
Keyword(s):  
Light Emitting Diode ◽  
Band Edge ◽  
Near Band Edge ◽  
Zno Film ◽  
Native Defects ◽  
Light Emitting ◽  
Uv Emission ◽  
Near Ultraviolet ◽  
Double Heterojunction ◽  
P Type

Abstract In this work, an AlN-ZnO/ZnO/AlN-ZnO double heterojunction (DH) structure prepared using the cosputtering technology was deposited onto the p-type GaN epitaxial layer. The indiffusion of the oxygen atoms to the p-GaN epilayer was obstructed as the cosputtered AlN-ZnO film inset between n-ZnO/p-GaN interface. The near-ultraviolet (UV) emission from this ZnO/GaN-based light emitting diode (LED) was greatly improved as compared to an n-type ZnO film directly deposited onto the p-GaN epilayer. Meanwhile, the native defects in the n-ZnO layer associated with the green luminescence was less likely to form while it was sandwiched by the cosputtered AlN-ZnO film. As the thickness of the active n-ZnO layer in the DH structure reached 10 nm, the near-band-edge (NBE) emission became the predominated luminescence over the resulting LED spectrum.

Near-Band-Edge Photoluminescence of Sulfur-Doped GaAs Prepared by Liquid Phase Epitaxy

1995 ◽  
Vol 34 (Part 1, No. 1) ◽  
pp. 42-47 ◽  
Author(s):  
Gwo-Cherng Jiang ◽  
Yih Chang ◽  
Liann-Be Chang ◽  
Yung-Der Juang ◽  
SuLu
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Band Edge ◽  
Near Band Edge
Sign in / Sign up

Export Citation Format

Share Document