Dependence of the tunneling magnetoresistance on an inserted nonmagnetic layer

2013 ◽  
Vol 63 (3) ◽  
pp. 433-436 ◽  
Author(s):  
Changsik Choi ◽  
Byung Chan Lee
Keyword(s):  
Tunneling Magnetoresistance ◽  
Nonmagnetic Layer

High tunneling magnetoresistance induced by symmetry and quantum interference in magnetic molecular junctions

2021 ◽  
Author(s):  
Lin Huang ◽  
Yu-Jia Zeng ◽  
Dan Wu ◽  
Nan-Nan Luo ◽  
Ye-Xin Feng ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Green’S Function ◽  
Green's Function ◽  
Quantum Interference ◽  
Density Functional ◽  
Molecular Junctions ◽  
Tunneling Magnetoresistance ◽  
Functional Theory ◽  
Nonequilibrium Green's Function ◽  
Molecular Scale

Achieving high tunneling magnetoresistance (TMR) in molecular-scale junctions is attractive for their applications in spintronics. By using density-functional theory (DFT) in combination with the nonequilibrium Green's function (NEGF) method, we...

Tunneling magnetoresistance and spin-valley polarization in magnetic silicene superlattices

2021 ◽  
Vol 103 (15) ◽  
Author(s):  
J. G. Rojas-Briseño ◽  
M. A. Flores-Carranza ◽  
P. Villasana-Mercado ◽  
S. Molina-Valdovinos ◽  
I. Rodríguez-Vargas
Keyword(s):  
Tunneling Magnetoresistance ◽  
Valley Polarization

scholarly journals Surface acoustic wave induced modulation of tunneling magnetoresistance in magnetic tunnel junctions

2021 ◽  
Vol 130 (3) ◽  
pp. 033901
Author(s):  
Dhritiman Bhattacharya ◽  
Peng Sheng ◽  
Md Ahsanul Abeed ◽  
Zhengyang Zhao ◽  
Hongshi Li ◽  
...  
Keyword(s):  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Wave Induced

MAGNETORESISTANCE IN Fe/MgO/Fe MAGNETIC TUNNEL JUNCTIONS

2007 ◽  
Vol 17 (03) ◽  
pp. 593-598 ◽  
Author(s):  
N. N. BELETSKII ◽  
S. A. BORYSENKO ◽  
V. M. YAKOVENKO ◽  
G. P. BERMAN ◽  
S. A. WOLF
Keyword(s):  
Current Density ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Electron Current ◽  
Ferromagnetic Electrode ◽  
Electron Current Density

The magnetoresistance of Fe/MgO/Fe magnetic tunnel junctions (MTJs) was studied taking into consideration image forces. For MTJs with an MgO insulator, explanations are given of the giant tunneling magnetoresistance (TMR) effect and the effect of the increasing TMR with an increase in MgO insulator thickness. It is demonstrated that the electron current density through MTJs can be high enough to switch the magnetization of a ferromagnetic electrode.

scholarly journals Effects of resonant interface states on tunneling magnetoresistance

2002 ◽  
Vol 65 (6) ◽  
Author(s):  
O. Wunnicke ◽  
N. Papanikolaou ◽  
R. Zeller ◽  
P. H. Dederichs ◽  
V. Drchal ◽  
...  
Keyword(s):  
Interface States ◽  
Tunneling Magnetoresistance
Sign in / Sign up

Export Citation Format

Share Document