Study of atmospheric pressure chemical vapor deposition by using a double discharge system for SiO x thin-film deposition with a HMDS/Ar/He/O2 gas mixture

2012 ◽  
Vol 61 (3) ◽  
pp. 397-401 ◽  
Author(s):  
Ga Young Kim ◽  
Jae Beom Park ◽  
Geun Young Yeom
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Gas Mixture ◽  
Discharge System ◽  
Pressure Chemical ◽  
Double Discharge

Peculiarities of thin film deposition by means of reactive impulse plasma assisted chemical vapor deposition (RIPACVD) method

2004 ◽  
Vol 459 (1-2) ◽  
pp. 160-164 ◽  
Author(s):  
Aleksander Werbowy ◽  
Andrzej Olszyna ◽  
Krzysztof Zdunek ◽  
Aleksandra Sokołowska ◽  
Jan Szmidt ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition

Silicon Thin Film Homoepitaxy by Rapid Thermal Atmospheric-Pressure Chemical Vapor Deposition (RT-APCVD)

1996 ◽  
Vol 429 ◽  
Author(s):  
Rémi Monna ◽  
Detlef Angermeier ◽  
Abdelilah Slaoui ◽  
Jean Claude Muller
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Silicon Surface ◽  
Chemical Vapor ◽  
Silicon Thin Film ◽  
Characterization Methods ◽  
Growth Decline ◽  
Pressure Chemical ◽  
Scanning Electron

AbstractThe homoepitaxy of thin film silicon layers in a horizontal, atmospheric pressure RTCVD reactor is reported. The experiments were conducted in a temperature range from 900°C to 1300°C employing the precursor trichlorosilane (TCS) and the dopant trichloroborine (TCB) diluted in hydrogen. The epilayers were evaluated by Nomarski microscopy, Rutherford backscattering spectroscopy, and scanning electron microscopy (SEM). The electrical properties of the thin film were analyzed by sheet resistance and four point probe characterization methods. We propose that the responsible mechanisms for the observed growth decline at higher precursor concentration in hydrogen are due to the reaction of the gaseous HCI with the silicon surface and the supersaturation of silicon.

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