Proton Beam Energy Determination Using a Device for Range Measurement of an Accelerated High Energy Ion Beam

2011 ◽  
Vol 59 (2(2)) ◽  
pp. 679-685 ◽  
Author(s):  
Yeun-Soo Park ◽  
Jae-Hong Kim ◽  
Geun-Beom Kim ◽  
Bong-Hwan Hong ◽  
In-Su Jung ◽  
...  
2003 ◽  
Vol 777 ◽  
Author(s):  
J.A. van Kan ◽  
A.A. Bettiol ◽  
F. Watt

AbstractA new nuclear nanoprobe facility has been developed at the Centre for Ion Beam Applications (CIBA) in the Physics Department of the National University of Singapore. This facility is the first of its type dedicated to proton beam micromachining on a micron as well as a nano scale. The design and performance of the facility, which is optimized for 3D lithography with MeV protons, is discussed here. The system has been designed to be compatible with Si wafers up to 6”.The production of good quality high aspect ratio microstructures requires a lithographic technique capable of producing microstructures with smooth vertical sidewalls. In proton beam micromachining, a high energy (e.g. 2 MeV) proton beam is focused to a sub-100 nm spot size and scanned over a resist material (e.g. SU-8 and polymethylmethacrylate (PMMA)). When a proton beam interacts with matter it follows an almost straight path, the depth of which is dependent on the proton beam energy. These features enable the production of nanometer sized polymer structures. Experiments have shown that post-bake and curing steps are not required in this SU-8 process, reducing the effects of cracking and internal stress in the resist. Since proton beam micromachining is a fast direct write lithographic technique it has high potential for the production of high-aspect-ratio nano-structures.


2013 ◽  
Vol 76 (12) ◽  
pp. 1490-1496
Author(s):  
A. N. Zelenski ◽  
G. Atoian ◽  
A. A. Bogdanov ◽  
S. B. Nurushev ◽  
F. S. Pylaev ◽  
...  

Author(s):  
Tara Mastren ◽  
Christiaan Vermeulen ◽  
Mark Brugh ◽  
Eva R. Birnbaum ◽  
Meiring F. Nortier ◽  
...  

MRS Bulletin ◽  
1996 ◽  
Vol 21 (8) ◽  
pp. 58-62 ◽  
Author(s):  
Harold A. Davis ◽  
Gennady E. Remnev ◽  
Regan W. Stinnett ◽  
Kiyoshi Yatsui

Over the past decade, researchers in Japan, Russia, and the United States have been investigating the application of intense-pulsed-ion-beam (IPIB) technology (which has roots in inertial confinement fusion programs) to the surface treatment and coating of materials. The short range (0.1–10 μm) and high-energy density (1–50 J/cm2) of these short-pulsed (t ≥ 1 μs) beams (with ion currents I = 5–50 kA, and energies E = 100–1,000 keV) make them ideal flash-heat sources to rapidly vaporize or melt the near-surface layer of targets similar to the more familiar pulsed laser deposition (PLD) or laser surface treatment. The vaporized material can form coatings on substrates, and surface melting followed by rapid cooling (109 K/s) can form amorphous layers, dissolve precipitates, and form nonequilibrium microstructures.An advantage of this approach over laser processing is that these beams deliver 0.1–10 KJ per pulse to targets at expected overall electrical efficiencies (i.e., the ratio of extracted ion-beam energy to the total energy consumed in generating the beam) of 15–40% (compared to < 1% for the excimer lasers often used for similar applications). Consequently IPIB hardware can be compact and require relatively low capital investment. This opens the promise of environmentally conscious, low-cost, high-throughput manufacturing. Further, efficient beam transport to the target and excellent coupling of incident ion energy to targets are achieved, as opposed to lasers that may have limited coupling to reflective materials or produce reflecting plasmas at high incident fluence. The ion range is adjustable through selection of the ion species and kinetic energy, and the beam energy density can be tailored through control of the beam footprint at the target to melt (1–10 J/cm2) or to vaporize (10–50 J/cm2) the target surface. Beam pulse durations are short (≥ 1 μs) to minimize thermal conduction. Some disadvantages of IPIB processing over laser processing include the need to form and propagate the beams in vacuum, and the need for shielding of x-rays produced by relatively low-level electron current present in IPIB accelerators. Also these beams cannot be as tightly focused onto targets as lasers, making them unsuitable for applications requiring treatment on small spatial scales.


Author(s):  
Chaoyue Zhang ◽  
Xiaohua Liang ◽  
Yanbing Xu ◽  
Wenxi Peng ◽  
Jianjian He ◽  
...  

1997 ◽  
Author(s):  
D. L. Bleuel ◽  
R. J. Donahue ◽  
B. A. Ludewigt

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