Fabrication and Characterization of the 32 x 32 Array Digital Si-PIN X-ray Detector for Single Photon Counting Image Sensor

2010 ◽  
Vol 57 (1) ◽  
pp. 44-50 ◽  
Author(s):  
Jin-Goo Park
Keyword(s):  
Single Photon ◽  
Photon Counting ◽  
Image Sensor ◽  
Single Photon Counting ◽  
X Ray ◽  
Fabrication And Characterization ◽  
X 32

Characterization of a mammographic system based on single photon counting pixel arrays coupled to GaAs x-ray detectors

2009 ◽  
Vol 36 (4) ◽  
pp. 1330-1339 ◽  
Author(s):  
S. R. Amendolia ◽  
M. G. Bisogni ◽  
P. Delogu ◽  
M. E. Fantacci ◽  
G. Paternoster ◽  
...  
Keyword(s):  
Single Photon ◽  
Photon Counting ◽  
Single Photon Counting ◽  
X Ray

scholarly journals Advances in Synchrotron XRPD for the characterization of pharmaceuticals

2014 ◽  
Vol 70 (a1) ◽  
pp. C587-C587
Author(s):  
Fabia Gozzo
Keyword(s):  
Single Photon ◽  
Photon Counting ◽  
Microstructural Characterization ◽  
High Signal ◽  
Gold Standard Method ◽  
Single Photon Counting ◽  
X Ray ◽  
Diffraction Patterns ◽  
Characterization Of Materials

X-Ray Powder Diffraction (XRPD) directly provides structural and microstructural characterization of materials. Considered the gold standard method in the field of pharmaceutical powders for the identification of solid forms (i.e. polymorphs, solvates, hydrates, salts, co-crystals, amorphous), when combined with a synchrotron X-ray beam, XRPD becomes a truly mighty analytical tool for the characterization of pharmaceuticals. Ultra-high FWHM and d-spacing resolutions, accurate 2theta angle assignment, high signal-to-background and signal-to-noise ratios distinguish synchrotron XRPD patterns from conventional XRPD, whereas the combination of the synchrotron properties with new outstanding single-photon-counting detection systems drastically reduces the measurements times to milliseconds allowing in-situ study of the kinetic of transformations and radiation-damage-free high-resolution diffraction patterns. Advances in instrumentation, calibration and data collection procedures leading to detection limits of contaminating crystalline phases better than 0.05% wt% as well as subtle structural details are described.

Beyond single photon counting X-ray detectors

2011 ◽  
Vol 628 (1) ◽  
pp. 238-241 ◽  
Author(s):  
A. Bergamaschi ◽  
R. Dinapoli ◽  
B. Henrich ◽  
I. Johnson ◽  
A. Mozzanica ◽  
...  
Keyword(s):  
Single Photon ◽  
Photon Counting ◽  
Single Photon Counting ◽  
X Ray

Operation of a single-photon–counting x-ray charge-coupled device camera spectrometer in a petawatt environment

2004 ◽  
Vol 75 (10) ◽  
pp. 3705-3707 ◽  
Author(s):  
C. Stoeckl ◽  
W. Theobald ◽  
T. C. Sangster ◽  
M. H. Key ◽  
P. Patel ◽  
...  
Keyword(s):  
Single Photon ◽  
Photon Counting ◽  
Charge Coupled Device ◽  
Single Photon Counting ◽  
X Ray

X-ray imaging of moving objects using on-chip TDI and MDX methods with single photon counting CdTe hybrid pixel detector

2021 ◽  
Vol 16 (12) ◽  
pp. C12014
Author(s):  
M. Zoladz ◽  
P. Grybos ◽  
R. Szczygiel
Keyword(s):  
Moving Objects ◽  
Single Photon ◽  
Photon Counting ◽  
Two Dimensional ◽  
Single Photon Counting ◽  
X Ray ◽  
X Ray Imaging ◽  
On Chip ◽  
Pixel Matrix ◽  
Single Pixel

Abstract X-ray imaging of moving objects using line detectors remains the most popular method of object content and structure examination with a typical resolution limited to 0.4–1 mm. Higher resolutions are difficult to obtain as, for the detector in the form of a single pixel row, the narrower the detector is, the lower the image Signal to Noise Ratio (SNR). This is because, for smaller pixel sizes, fewer photons hit the pixel in each time unit for a given radiation intensity. To overcome the trade-off between the SNR and spatial resolution, a two-dimensional sensor, namely a pixel matrix can be used. Imaging of moving objects with a pixel matrix requires time-domain integration (TDI). Straightforward TDI implementation is based on the proper accumulation of images acquired during consecutive phases of an object’s movement. Unfortunately, this method is much more demanding regarding data transfer and processing. Data from the whole pixel matrix instead of a single pixel row must be transferred out of the chip and then processed. The alternative approach is on-chip TDI implementation. It takes advantage of photons acquired by multiple rows (a higher SNR), but generates similar data amount as a single pixel row and does not require data processing out of the chip. In this paper, on-chip TDI is described and verified by using a single photon counting two-dimensional (a matrix of 128 × 192 pixels) CdTe hybrid X-ray detector with the 100 µm × 100 µm pixel size with up to four energy thresholds per pixel. Spatial resolution verification is combined with the Material Discrimination X-ray (MDX) imaging method.

Pixel readout IC for CdTe detectors operating in single photon counting mode with interpixel communication

2022 ◽  
Vol 17 (01) ◽  
pp. C01036
Author(s):  
P. Grybos ◽  
R. Kleczek ◽  
P. Kmon ◽  
A. Krzyzanowska ◽  
P. Otfinowski ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Single Photon ◽  
Photon Counting ◽  
Recognition Algorithm ◽  
Total Charge ◽  
Readout Integrated Circuit ◽  
Single Photon Counting ◽  
X Ray ◽  
Pixel Detectors ◽  
Photon Counting Mode

Abstract This paper presents a readout integrated circuit (IC) of pixel architecture called MPIX (Multithreshold PIXels), designed for CdTe pixel detectors used in X-ray imaging applications. The MPIX IC area is 9.6 mm × 20.3 mm and it is designed in a CMOS 130 nm process. The IC core is a matrix of 96 × 192 square-shaped pixels of 100 µm pitch. Each pixel contains a fast analog front-end followed by four independently working discriminators and four 12-bit ripple counters. Such pixel architecture allows photon processing one by one and selecting the X-ray photons according to their energy (X-ray colour imaging). To fit the different range of applications the MPIX IC has 8 possible different gain settings, and it can process the X-ray photons of energy up to 154 keV. The MPIX chip is bump-bonded to the CdTe 1.5 mm thick pixel sensor with a pixel pitch of 100 µm. To deal with the charge sharing effect coming from a thick semiconductor pixel sensor, multithreshold pattern recognition algorithm is implemented in the readout IC. The implemented algorithm operates both in the analog domain (to recover the total charge spread between neighboring pixels, when a single X-ray photon hits the border of the pixel) and in the digital domain (to allocate a hit position to a single pixel).

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