Velocity Saturation Effects in a Short Channel Si-MOSFET and itsSmall Signal Characteristics

2009 ◽  
Vol 55 (2) ◽  
pp. 581-584
Author(s):  
Sanghoon Hwang ◽  
Hyunsik Im ◽  
Minkyu Song ◽  
Koichi Ishida ◽  
Toshiro Hiramoto ◽  
...  
Keyword(s):  
Short Channel ◽  
Velocity Saturation ◽  
Signal Characteristics ◽  
Saturation Effects

Hot Carrier Effects in Deep Submicron Nmosfets

1996 ◽  
Vol 428 ◽  
Author(s):  
Abhijit Phanse ◽  
Samar Saha
Keyword(s):  
Electric Fields ◽  
Channel Length ◽  
Deep Submicron ◽  
Short Channel ◽  
Hot Carrier ◽  
Velocity Saturation ◽  
Substrate Current ◽  
Hot Carrier Effects ◽  
Saturation Effects ◽  
Channel Lengths

AbstractThis paper addresses hot-carrier related reliability issues in deep submicron silicon nMOSFET devices. In order to monitor the hot-carrier induced device degradation, the substrate current was measured for devices with varying channel lengths (20 um - 0.24 um) under various biasing conditions. Deep submicron devices experience velocity saturation of channel carriers due to extremely high lateral electric fields. To evaluate the effects of velocity saturation in the channel, the pinch-off length in the channel was extracted for all the devices of the target technology. It was observed that for very short channel devices, carriers in most of the channel experience velocity saturation and almost the entire channel gets pinched off. It is shown in this paper that for very short channel devices, the pinch-off length in the channel is limited by the effective channel length, and that velocity saturation effects are critical to the transport of channel carriers.

Effects of carrier-velocity saturation on the characteristics of short channel MOSFETs with lightly doped drains

1992 ◽  
Vol 131 (1) ◽  
pp. K77-K80 ◽  
Author(s):  
M. B. Lee ◽  
J. I. Lee ◽  
K. N. Kang ◽  
K. S. Yoon ◽  
S. Hong ◽  
...  
Keyword(s):  
Short Channel ◽  
Velocity Saturation ◽  
Carrier Velocity

scholarly journals A Physical Model for MOSFET Drain Current in Non-ohmic Regime Using Ohmic Regime Operation

2001 ◽  
Vol 24 (1) ◽  
pp. 23-29
Author(s):  
A. El Abbassi ◽  
Y. Amhouche ◽  
K. Raïs ◽  
R. Rmaily
Keyword(s):  
Physical Model ◽  
Drain Current ◽  
Experimental Characteristic ◽  
Saturation Regime ◽  
Short Channel ◽  
Simple Method ◽  
Velocity Saturation

In order to characterise the velocity saturation phenomena in short channel MOSFET's, a simple method is proposed in this work. It is based on the comparison between transistor behaviour in ohmic and saturation regime respectively. Therefore, the MOSFET characteristicId0(Vd). avoiding velocity saturation phenomena, can be obtained from ohmic characteristicId(Vg)and compared with the experimental characteristicId(Vd).

scholarly journals Velocity Saturation Effect on Low Frequency Noise in Short Channel Single Layer Graphene Field Effect Transistors

2019 ◽  
Vol 1 (12) ◽  
pp. 2626-2636 ◽  
Author(s):  
Nikolaos Mavredakis ◽  
Wei Wei ◽  
Emiliano Pallecchi ◽  
Dominique Vignaud ◽  
Henri Happy ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Short Channel ◽  
Velocity Saturation ◽  
Layer Graphene

Modelling Velocity Saturation Effects in Polysilicon Thin-Film Transistors

2006 ◽  
Vol 45 (5B) ◽  
pp. 4374-4377 ◽  
Author(s):  
A. Valletta ◽  
P. Gaucci ◽  
L. Mariucci ◽  
G. Fortunato
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Velocity Saturation ◽  
Saturation Effects
Sign in / Sign up

Export Citation Format

Share Document