Plasma-Assisted Molecular-Beam Epitaxy of ZnO Films on (0001) Al2O3: Effects of the MgO Buffer Layer Thickness

2008 ◽  
Vol 53 (1) ◽  
pp. 271-275 ◽  
Author(s):  
Jae Goo Kim ◽  
Seok Kyu Han ◽  
Dong-Suk Kang ◽  
Sang Mo Yang ◽  
Soon-Ku Hong ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Molecular Beam ◽  
Zno Films ◽  
Buffer Layer Thickness

Effects of low-temperature Si buffer layer thickness on the growth of SiGe by molecular beam epitaxy

2002 ◽  
Vol 92 (11) ◽  
pp. 6880-6885 ◽  
Author(s):  
S. W. Lee ◽  
H. C. Chen ◽  
L. J. Chen ◽  
Y. H. Peng ◽  
C. H. Kuan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Molecular Beam ◽  
Buffer Layer Thickness

Effects of buffer layer thickness on properties of ZnO thin films grown on porous silicon by plasma-assisted molecular beam epitaxy

Vacuum ◽  
2012 ◽  
Vol 86 (9) ◽  
pp. 1373-1379 ◽  
Author(s):  
Min Su Kim ◽  
Do Yeob Kim ◽  
Min Young Cho ◽  
Giwoong Nam ◽  
Soaram Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Porous Silicon ◽  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Molecular Beam ◽  
Zno Thin Films ◽  
Buffer Layer Thickness

Growth and characteristics of ZnO films on growth side of freestanding diamond substrate dependent on buffer layer thickness

2010 ◽  
Vol 518 (19) ◽  
pp. 5396-5399 ◽  
Author(s):  
Shiyong Gao ◽  
Hongdong Li ◽  
Junwei Liu ◽  
Yingai Li ◽  
Xianyi Lü ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Layer Thickness ◽  
Zno Films ◽  
Diamond Substrate ◽  
Buffer Layer Thickness

Growth of epitaxial ZnO films on Si (111) substrates with Cr compound buffer layer by plasma-assisted molecular beam epitaxy

2010 ◽  
Vol 312 (15) ◽  
pp. 2190-2195 ◽  
Author(s):  
Jung-Hyun Kim ◽  
Seok Kyu Han ◽  
Soon-Ku Hong ◽  
Jae Wook Lee ◽  
Jeong Yong Lee ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Zno Films

Growth of the Single-Crystalline ZnO Films on Si (111) Substrates by Plasma-Assisted Molecular-Beam Epitaxy

2001 ◽  
Vol 692 ◽  
Author(s):  
Kazuto Koike ◽  
Takanori Tanite ◽  
Shigehiko Sasa ◽  
Masataka Inoue ◽  
Mitsuaki Yano
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Zno Films ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Single Crystalline ◽  
Si Substrates ◽  
Initial Stage

AbstractThis report describes the growth of single-crystalline ZnO films on Si (111) substrates by plasma-assisted molecular-beam epitaxy. X-ray diffraction measurement shows that c-axis oriented ZnO films are easily grown on Si (111) substrates. However, in-plane random rotational domains are included in the ZnO films due to the inevitable oxidation of substrate surface at the initial stage of ZnO growth. By employing a thin CaF2 buffer layer between the ZnO films and Si substrates, we have succeeded in suppressing the generation of rotational domains and in obtaining an intense ultraviolet photoluminescence even at room temperature. These results indicate that the use of CaF2 buffer layer is promising for the growth of device-quality ZnO films on Si (111) substrates.

Effect of the ZnO Buffer Layer Thickness on AZO Film Properties

2012 ◽  
Vol 562-564 ◽  
pp. 81-84
Author(s):  
Cheng Hua Sui ◽  
Bin Liu ◽  
Tian Ning Xu ◽  
Bo Yan ◽  
Gao Yao Wei
Keyword(s):  
Buffer Layer ◽  
Layer Thickness ◽  
Visible Region ◽  
Optical Transmittance ◽  
Electron Beam Evaporation ◽  
Zno Films ◽  
Diffraction Measurement ◽  
Buffer Layer Thickness ◽  
Zno Buffer Layer ◽  
Quartz Substrates

To evaluate the influence of the ZnO buffer layer thickness on structural, electrical and optical properties of ZnO: Al (AZO)/ZnO bi-layer films, a series of AZO/ZnO films were deposited on the quartz substrates by electron beam evaporation. X-ray diffraction measurement shows that the crystal quality of the films is improved with the increase of the film thickness. The electrical properties results show that the resistivity decreases initial and then increases. However, optical transmittance of all the films is >80% regardless of the buffer layer thickness in the visible region. The results illustrate that the insertion of ZnO buffer layer can improve the film performance.

The Growth of ZnO on CrN Buffer Layer Using Surface Phase Control by Plasma Assisted Molecular-beam Epitaxy

2006 ◽  
Vol 957 ◽  
Author(s):  
Jinsub Park ◽  
Tsutomu Minegishi ◽  
Seunghwan Park ◽  
Inho Im ◽  
Takahasi Hanada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Film Growth ◽  
Surface Oxidation ◽  
High Energy ◽  
Zno Films ◽  
Rocksalt Structure ◽  
Structure Changes ◽  
Zno Buffer Layer

ABSTRACTEpitaxial ZnO films are successfully grown on Al2O3 substrates with phase controlled CrN buffer layer using Zn and O-plasma pre-exposures on CrN layers by plasma assisted molecular beam epitaxy (P-MBE). The Zn exposures on CrN layers prior to ZnO film growth result in the formation of rocksalt CrN without surface oxidation. On the other hand, the surface of the initially deposited CrN layers with rocksalt structure changes into hexagonal structured Cr2O3 after O-plasma exposure as confirmed by reflection high-energy electron diffraction (RHEED) and high resolution transmission electron microscopy (HR TEM). Etching studies show that the ZnO films grown on CrN have +C polarity, while the polarity of ZnO on Cr2O3/CrN double buffer is -C polarity. The interdiffusion of Zn and Cr occurs at the ZnO/CrN interface, while the interdiffusion is negligible at the ZnO/ Cr2O3 interface. The interdiffusion of Cr and Zn can be suppressed by inserting a low-temperature ZnO buffer layer in between ZnO and CrN layers, which helps improve the crystal quality of ZnO layers grown with CrN buffer.

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