Current Flow Mechanisms of Platinum-Silicided p-Type Schottky Barrier MOSFETs

2008 ◽  
Vol 53 (4) ◽  
pp. 2175-2178 ◽  
Author(s):  
Moongyu Jang ◽  
Seongjae Lee
Keyword(s):  
Schottky Barrier ◽  
Current Flow ◽  
Flow Mechanisms ◽  
P Type

Current Transport in Low-Resistance Metal-InP Contacts

1993 ◽  
Vol 300 ◽  
Author(s):  
Thomas Clausen ◽  
Otto Leistiko
Keyword(s):  
Schottky Barrier ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Current Flow ◽  
Thermionic Emission ◽  
Transport Processes ◽  
Potential Difference ◽  
Current Transport ◽  
Diffusion Limited ◽  
P Type

ABSTRACTThe limiting transport processes for current flow across metal-semiconductor (MS) ohmic contacts to n- and p-type InP have been investigated for Au-based metallizations containing the doping elements Germanium and Zinc. It has been found that the Schottky barrier is lowered and in some cases vanishes during annealing. The current flow for an optimal ohmic contact is diffusion limited by a Fermi potential difference between the alloyed metallization and the bulk InP. For non-optimal ohmic contacts the current flow is also limited by thermionic emission across a low effective Schottky barrier.

scholarly journals Исследование механизмов токопрохождения в гетероструктуре CdS/por-Si/p-Si

2018 ◽  
Vol 52 (7) ◽  
pp. 751
Author(s):  
В.В. Трегулов ◽  
В.Г. Литвинов ◽  
А.В. Ермачихин
Keyword(s):  
Current Flow ◽  
Energy Band Diagram ◽  
Band Diagram ◽  
Current Voltage Characteristic ◽  
Semiconductor Heterostructure ◽  
Current Voltage ◽  
Recombination Processes ◽  
Flow Mechanisms ◽  
Carrier Tunneling ◽  
Space Charge Limited Currents

AbstractThe temperature dependence of the forward and reverse portions of the current–voltage characteristic and the photovoltage spectrum of a CdS/ por -Si/ p -Si semiconductor heterostructure are studied. It is found that the current-flow mechanisms are controlled by generation–recombination processes in the spacecharge region of the por -Si/ p -Si heterojunction, carrier tunneling in the por -Si film, and the model of space-charge-limited currents. A simplified version of the energy-band diagram of the heterostructure under study is proposed.

Ohmic and Rectifying Contacts on High Resistivity P-Type Cadmium Telluride

1982 ◽  
Vol 16 ◽  
Author(s):  
A. Musa ◽  
J.P. Ponpon ◽  
M. Hage-Ali
Keyword(s):  
Cadmium Telluride ◽  
Current Flow ◽  
Electrical Characterization ◽  
High Resistivity ◽  
Experimental Conditions ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Gold Contact ◽  
P Type ◽  
A Current

ABSTRACTOhmic and rectifying contacts on high resistivity etched P-type cadmium telluride have been studied in order to produce diode structures.For this,we have first investigated the properties of gold contacts obtained by chemical reactions of CdTe dippedin gold chloride.Both electrical characterization and structure have been analyzed as a function of the experimental conditions of the contact deposition.The results can be interpreted in terms of a current flow enhanced by tunnelling through the Au-CdTe junction and related to the structure of the interface a few tens of nanometer below the gold contact. In addition,several rectifying contacts have been investigated , in order to achieve a structure having low leakage current.

Schottky Barrier Heights of Cr Contacts on n- and p-Type 6H-SiC

1997 ◽  
Vol 14 (6) ◽  
pp. 460-463 ◽  
Author(s):  
Zhang Yong-gang ◽  
Li Ai-zhen ◽  
A G Milnes
Keyword(s):  
Schottky Barrier ◽  
Barrier Heights ◽  
P Type

Thermal stabilization and deterioration of the WC/p-type diamond (100) Schottky-barrier interface

2014 ◽  
Vol 211 (10) ◽  
pp. 2363-2366 ◽  
Author(s):  
Alexandre Fiori ◽  
Tokuyuki Teraji ◽  
Yasuo Koide
Keyword(s):  
Schottky Barrier ◽  
Thermal Stabilization ◽  
P Type
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