Opto-Electronic Properties of Fluorine Doped Tin Oxide Films Deposited by Nebulized Spray Pyrolysis Method

2015 ◽  
Vol 8 (4) ◽  
pp. 259-268 ◽  
Author(s):  
P. Karthick ◽  
Divya Vijayanara ◽  
S. Suja ◽  
M. Sridharan ◽  
K. Jeyadheepa
Keyword(s):  
Electronic Properties ◽  
Spray Pyrolysis ◽  
Tin Oxide ◽  
Oxide Films ◽  
Spray Pyrolysis Method ◽  
Pyrolysis Method ◽  
Nebulized Spray Pyrolysis ◽  
Tin Oxide Films

EFFECT OF ANTIMONY AND FLUORINE DOPING ON ELECTRICAL, OPTICAL AND STRUCTURAL PROPERTIES OF TIN OXIDE FILMS PREPARED BY SPRAY PYROLYSIS METHOD

2006 ◽  
Vol 13 (04) ◽  
pp. 357-364 ◽  
Author(s):  
K. S. SHAMALA ◽  
L. C. S. MURTHY ◽  
K. NARASIMHA RAO
Keyword(s):  
Electrical Properties ◽  
Spray Pyrolysis ◽  
Tin Oxide ◽  
Spray Pyrolysis Technique ◽  
Oxide Films ◽  
Ammonium Fluoride ◽  
Alcoholic Solution ◽  
Spray Pyrolysis Method ◽  
Electron Conduction ◽  
Tin Oxide Films

Undoped, antimony doped and fluorine doped tin oxide films have been prepared by spray pyrolysis technique. The films were deposited on glass substrates at temperatures ranging between 300°C and 370°C by spraying an alcoholic solution of tin tetra chloride ( SnCl 4). Dopants used were antimony tri chloride ( SbCl 3) for antimony doped tin oxide (ATO) films, and ammonium fluoride ( NH 4 F ) for fluorine doped tin oxide (FTO) films. Among undoped tin oxide films, the least resistivity was found to be 3.1 × 10-3 Ω-cm for a molar concentration of 0.75 M. In case of antimony doped films minimum resistivity value was found to be 7.7 × 10-4 Ω-cm for a film with ( Sb / Sn ) = 0.065, deposited at 370°C and in case of fluorine doped films it was found to be 1.67 × 10-3 Ω-cm for a doping percentage of 3 at% of fluorine in 0.1 M solution. The corresponding values of the carrier concentrations were found to be 1.8 × 1020/cm3 and 9.98 × 1020/cm3, respectively. The electrical and optical properties of these films were studied as a function of both doping concentration and substrate temperature. Doping percentage of antimony and fluorine in the spray solution has been optimized for achieving a minimum electrical resistivity. The dependence of electrical properties such as resistivity, carrier concentration and mobility of doped films were analyzed. Influence of antimony dopant on the optical band gap of the films has been reported on the basis of electron conduction mechanism. Air and argon annealing effects on the electrical properties of antimony doped tin oxide films were also studied.

Preparation of Titanium-doped Indium Oxide Films by Ultrasonic Spray Pyrolysis Method

2013 ◽  
Vol 454 (1) ◽  
pp. 63-69
Author(s):  
Surapong Panyata ◽  
Sukum Eitssayeam ◽  
Gobwut Rujijanagul ◽  
Tawee Tunkasiri ◽  
Sumnuk Sirisoonthorn ◽  
...  
Keyword(s):  
Spray Pyrolysis ◽  
Indium Oxide ◽  
Oxide Films ◽  
Ultrasonic Spray Pyrolysis ◽  
Spray Pyrolysis Method ◽  
Ultrasonic Spray ◽  
Pyrolysis Method ◽  
Indium Oxide Films ◽  
Ultrasonic Spray Pyrolysis Method

scholarly journals Characterization and thermoluminescence study of gamma irradiated Tb-doped ZnO and undoped ZnO synthesized by spray pyrolysis method

Nova Scientia ◽  
2021 ◽  
Vol 13 (27) ◽  
Author(s):  
Alejandro Ortiz-Morales ◽  
Manuel García-Hipólito ◽  
Epifanio Cruz-Zaragoza ◽  
Ramón Gómez-Aguilar
Keyword(s):  
Zinc Oxide ◽  
Gamma Radiation ◽  
Spray Pyrolysis ◽  
Oxide Films ◽  
Spray Pyrolysis Method ◽  
Order Kinetic ◽  
Zinc Oxide Films ◽  
Pyrolysis Method ◽  
Wide Range ◽  
Doped Zno

High gamma dose-resistant undoped ZnO and Tb-doped ZnO thermoluminescent (TL) micro-phosphors were prepared by the spray pyrolysis method. Scanning electron microscopy shows crystalline rods with hexagonal morphology, (0.1-0.4 µm diameter, and about 1 µm length). Raman spectra dispersion reveals a würtzite form. Photoluminescence (PL) study of irradiated zinc oxide films indicates the generation of defects produced by gamma irradiation resulting in an increased probability of electron-hole exciton recombination. PL spectrum shows emission bands from 5D4-7Fj=6,5,4,3 transitions ascribed to Tb3+ dopant in zinc oxide phosphor. X-ray diffraction patterns for both types of films growth (undoped ZnO and Tb-doped ZnO) are typical of zinc oxide crystalline structure, with no noticeable effect of Tb ions. Dosimetric properties, for both samples, show a low TL fading signal and TL reproducibility signal for undoped ZnO and Tb-doped ZnO samples was 29 and 57 %, respectively. The kinetic parameters such as activation energy E, frequency factor s, and Rm values, were obtained by Computerized Glow Curve Deconvolution (CGCD) assuming Mixed Order Kinetic model (MOK). The results show that the MOK well described the glow curves of zinc oxide films. The heating rate effects produced a broadening of glow peak located at 420 K. For purposes like radiation detector, atomic effective number (Zeff) was obtained: 27.74 and 56.47 for undoped ZnO and Tb-doped ZnO samples, respectively. The samples were exposed to gamma radiation in a wide range of 0.25–20 kGy dose. TL properties of undoped ZnO and Tb-doped ZnO samples show that these materials could be used to detect high doses in a gamma radiation field.

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