Emergence of cold plasma and electron beam irradiation as novel technologies to counter mycotoxins in food products

2020 ◽  
pp. 1-10
Author(s):  
X. Mohammadi ◽  
G. Matinfar ◽  
A. Mousavi Khaneghah ◽  
A. Singh ◽  
A. Pratap-Singh
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Degradation Products ◽  
Atmospheric Plasma ◽  
Beam Irradiation ◽  
Plant Materials ◽  
Cold Atmospheric Plasma ◽  
Novel Technologies ◽  
The World ◽  
Activity Mechanism

Today, mycotoxins are considered a serious risk for human health and the economy around the world. Hence, dealing with them in such a way as to minimise damage to food and plant materials has become an important issue. Cold atmospheric plasma and electron beam irradiation are updated and non-thermal technologies, which are recently used in detoxification of mycotoxins. Both of these technologies have several unique features that turn them into efficient methods for degrading mycotoxins. Therefore, the main purpose of the present study is exhibiting the detoxification power of these methods and parameters affecting their activity. Besides, their advantages, generating systems, activity mechanism, and the toxicity of degradation products are also reviewed.

LC-MS-(MS) determination of oxidative degradation products of nonylphenol ethoxylates, carboxylates and nonylphenols in water

2004 ◽  
Vol 50 (5) ◽  
pp. 227-234 ◽  
Author(s):  
M. Petrovic ◽  
P. Gehringer ◽  
H. Eschweiler ◽  
D. Barceló
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Limit Of Detection ◽  
Degradation Products ◽  
Oxidative Degradation ◽  
Nonylphenol Ethoxylates ◽  
Beam Irradiation ◽  
Treatment Processes ◽  
By Products

A commercial blend of nonylphenol ethoxylates (NPEOs) was chosen as representative for non-ionic polyethoxylated surfactants to study the oxidative degradation of this class of surfactants in water using ozonation as well as electron beam irradiation with and without the addition of ozone as treatment processes. The electron beam irradiation processes applied represent so-called Advanced Oxidation Processes (AOPs); the combined ozone/electron beam irradiation is, moreover, the most powerful AOP which can be applied in aqueous systems. It was found that both ozonation and the two AOPs applied were able to decompose not only the NPEOs but also the polyethyleneglycoles (PEGs) formed as by-products from NPEO degradation to residual concentrations below the limit of detection. Moreover, the treatment processes were also used to study the oxidative degradation of nonylphenoxy acetic acid (NPEC) and of nonylphenol (NP) which are formed as by-products from biodegradation of NPEOs.

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

A Study of Electron Beam Irradiation Influence on Device Contact Junction Characteristics of Advanced DRAM Using Atomic Force Probing

2013 ◽  
Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Forward Bias ◽  
Irradiation Damage ◽  
Beam Irradiation ◽  
Excess Current ◽  
Atomic Force ◽  
Order Of Magnitude ◽  
Voltage Contrast ◽  
Acceleration Voltage

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.

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