scholarly journals OPTICAL COATINGS FORMED BY GRADIENT REFRACTIVE INDEX MATERIALS / METALŲ OKSIDŲ IR JŲ MIŠINIŲ PANAUDOJIMAS KINTAMO LŪŽIO RODIKLIO OPTINĖMS DANGOMS FORMUOTI

2012 ◽  
Vol 3 (6) ◽  
pp. 85-90 ◽  
Author(s):  
Kęstutis Juškevičius ◽  
Simonas Kičas ◽  
Tomas Tolenis ◽  
Rytis Buzelis ◽  
Ramutis Drazdys

Recent advances in ion beam sputtering technology enabled efficient deposition of different oxide mixture coatings. In the present investigation, coating materials ZrO2and SiO2 were utilized for the synthesis of different mixtures. The goal of the conducted investigation was to explore the potential of ZrO2/SiO2 mixtures, especially for applications in the range of the UV spectral. Deposited dielectric mirrors having classical quarter-wave and “rised” design with ZrO2/SiO2 mixture for 266 nm and 355 nm showed good resistance to laser radiation. We also investigated the “fatigue” behavior of LIDT’s in LBO crystals with single, dual and triple wavelength anti-reflective coatings (AR@355, AR@532+1064 and AR@355+532+1064) in order to optimize design and layer materials. The influence of gradient refractive index profiles on damage resistance is of a special interest. We selected a few designs of antireflective coatings which demonstrated the best resistance to laser radiation. An experimental study on rugate filter coatings showed the need for a more accurate characterization of optical properties of metal oxides and their corresponding mixtures. Santrauka Šiame darbe tiriamas jonapluoščio dulkinimo technologija dengtų ZrO2/SiO2 ir jų mišinių optinių savybių pritaikymas kintamo lūžio rodiklio (Rugate tipo) optinėms interferencinėms dangoms formuoti. Mišiniuose naudojant mažą ZrO2 frakciją, buvo išplėstas šios medžiagos pritaikymas UV srityje. Remiantis gautais rezultatais, suformuotos didelio atspindžio (HR) ir skaidrinančios (AR) dangos esant λ = 355 nm bangos ilgio spinduliuotei, taip pat teoriškai sumodeliuotos ir suformuotos daugiabangio skaidrinimo (AR@ 355+532+ 064) Rugate tipo dangos ant LBO (LiB3O5) netiesinių kristalų. Palygintos šių dangų optinės savybės su tomis dangomis, kuriose panaudoti gryni metalo oksidai (fiksuoto lūžio rodiklio). Atliktas Rugate tipo dangų, pasižyminčių siaura didelio (R > 99,9 %) atspindžio zona ties 532 nm ir pralaidumu likusioje spektro dalyje, teorinis modeliavimas ir eksperimentinis garinimas.

Coatings ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 517
Author(s):  
Pengfei Kong ◽  
Yunti Pu ◽  
Ping Ma ◽  
Jiliang Zhu

Scandium oxide (Sc2O3) thin films with different numbers of oxygen defects were prepared by ion-beam sputtering under different oxygen flow rates. The results showed that the oxygen defects heavily affected crystal phases, optical properties, laser-induced damage threshold (LIDT) and surface quality of Sc2O3 films. The thin film under 0 standard-state cubic centimeter per minute (sccm) oxygen flow rate had the largest number of oxygen defects, which resulted in the lowest transmittance, LIDT and the worst surface quality. In addition, the refractive index of 0 sccm Sc2O3 film could not be measured in the same way. When the oxygen flow rate was 15 sccm, the Sc2O3 film possessed the best transmittance, refractive index, LIDT and surface roughness due to the lowest number of oxygen defects. This work elucidated the relationship between oxygen defects and properties of Sc2O3 films. Controlling oxygen flow rate was an important step of limiting the number of oxygen defects, which is of great significance for industrial production.


1991 ◽  
Vol 6 (1) ◽  
pp. 126-133 ◽  
Author(s):  
P.L. White ◽  
G.J. Exarhos ◽  
M. Bowden ◽  
N.M. Dixon ◽  
D.J. Gardiner

Raman microprobe studies of pulsed laser damaged TiO2 films deposited using three different methods are reported. Phase transformation and redeposition of coating materials were observed in selected regions of amorphous films deposited by ion beam sputtering and electron beam evaporation. Preferential removal of a specific phase or transformation to a second phase were observed in reactively sputtered films. Some damage sites exhibited regions of stress heterogeneity which can be explained in terms of the return electron stream model of plasma/target interaction and rapid quenching.


2013 ◽  
Vol 52 (8) ◽  
pp. 086103 ◽  
Author(s):  
Zhao Qiao ◽  
Ping Ma ◽  
Hao Liu ◽  
Yunti Pu ◽  
Zhichao Liu

Crystals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1549
Author(s):  
Nikolai Nikolayevich Yudin ◽  
Mikhail Zinoviev ◽  
Vladislav Gladkiy ◽  
Evgeny Moskvichev ◽  
Igor Kinyaevsky ◽  
...  

In this work, the effect of the defect structure and the parameters of antireflection interference coatings based on alternating layers of Nb2O5/Al2O3 and Nb2O5/SiO2 layers on the laser-induced damage threshold of ZGP crystals under the action of Ho:YAG laser radiation at a wavelength of 2.097 μm was determined. Coating deposition was carried out using the ion-beam sputtering method. The laser-induced damage threshold of the sample with a coating based on alternating layers Nb2O5 and SiO2 was W0d = 1.8 J/cm2. The laser-induced damage threshold of the coated sample based on alternating layers of Nb2O5 and Al2O3 was W0d = 2.35 J/cm2. It has been found that the presence of silicon conglomerates in an interference antireflection coating leads to a decrease in the laser-induced damage threshold of a nonlinear crystal due to local mechanical stresses and the scattering of incident laser radiation.


2009 ◽  
Vol 16 (3) ◽  
pp. 274-275 ◽  
Author(s):  
Chen Yang Huang ◽  
Hao Min Ku ◽  
Yi Ping Tsai ◽  
Wei Kai Chen ◽  
Shiuh Chao

2012 ◽  
Vol 26 (02) ◽  
pp. 1250012 ◽  
Author(s):  
V. V. ATUCHIN ◽  
V. SH. ALIEV ◽  
B. M. AYUPOV ◽  
I. V. KOROLKOV

Amorphous zirconium oxide (a- ZrO 2) thin films were prepared onto fuzzed quartz substrates by ion beam sputtering deposition (IBSD) method in ( Ar + O 2) gas mixture. Optical parameters of the films were evaluated by laser ellipsometry (λ = 632.8 nm ) and optical transmission measurements. Structural parameters were studied by XRD measurements. Variation of refractive index and film thickness have been defined as a function of time of high-temperature annealing at T = 900° C . Formation of monoclinic zirconium oxide (m- ZrO 2) nanocrystals with diameter of ~60 nm embedded into a- ZrO 2 matrix has been found by XRD analysis after long-time annealing.


2018 ◽  
Vol 75 ◽  
pp. 135-141 ◽  
Author(s):  
Huasong Liu ◽  
Lishuan Wang ◽  
Shida Li ◽  
Yugang Jiang ◽  
Dandan Liu ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Kesheng Guo ◽  
Yanzhi Wang ◽  
Ruiyi Chen ◽  
Yuhui Zhang ◽  
Anna Sytchkova ◽  
...  

AbstractLarge-scale layers peeling after the laser irradiation of dual ion beam sputtering coatings is discovered and a model is established to explain it. The laser damage morphologies relate to the laser fluence, showing thermomechanical coupling failure at low energy and coating layers separation at high energy. High-pressure gradients appear in the interaction between laser and coatings, resulting in large-scale layer separation. A two-step laser damage model including defect-induced damage process and ionized air wave damage process is proposed to explain the two phenomena at different energy. At relatively high energies (higher than 20 J/cm2), ionization of the air can be initiated, leading to a peeling off effect. The peeling effect is related to the thermomechanical properties of the coating materials.


Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.


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