Monte Carlo Simulation of Line-of-Sight Distance Measurements

2007 ◽  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Line Of Sight ◽  
Distance Measurements ◽  
Sight Distance

Performances of Non-Line-of-Sight Ultraviolet Multi-Scatter Propagation for Noncoplanar Geometries

2012 ◽  
Vol 571 ◽  
pp. 214-218
Author(s):  
Yi Nan Tang ◽  
Xiao Ping Xie ◽  
Wei Zhao
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Monte Carlo Method ◽  
Impulse Response ◽  
Mathematical Description ◽  
Pulse Width ◽  
Path Loss ◽  
Propagation Model ◽  
Line Of Sight ◽  
Non Line Of Sight

A multi-scatter propagation model based on Monte Carlo method is presented. This model can be applied to all the geometries, including coplanar or noncoplanar scenario. The mathematical description of this model is deduced. We obtain the spatial positions of photon with three Cartesian coordinates after each propagation step and the received judgment conditions. Employing a photon tracing technique, Monte Carlo simulation is performed to investigate the signal impulse response and the path loss. The results indicate that, when the off-axis angle increases, the amplitude of the impulse response decreases, while the path loss increases. In addition, it is observed that the pulse width increases with the off-axis angle.

Stopping Sight Distance and Available Sight Distance: New Model and Reliability Analysis Comparison

2017 ◽  
Vol 2638 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Jonathan S. Wood ◽  
Eric T. Donnell
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Design Criterion ◽  
Geometric Design ◽  
Design Criteria ◽  
Sight Distance ◽  
Stopping Sight Distance ◽  
Future Work ◽  
Important Design ◽  
Design Guidance

Stopping sight distance (SSD) is an important design criterion used in the geometry of highways and streets. Design guidance implies that SSD is used to ensure safety along the roadway. This paper reviews SSD design criteria and develops an updated model to improve consistency between available sight distance and SSD criteria found in geometric design policy. A new variable, the distance from the front of the car to the driver’s eye ( Lfront-eye), is used in the updated model. Distributional values for Lfront-eye are determined. A method accounting for lighted (daytime and lighted nighttime) versus unlighted nighttime conditions is also discussed. A probabilistic analysis of vertical curve SSD uses Monte Carlo simulation. The results of this analysis are compared with the SSD model found in current geometric design policy. Possible values for Lfront-eye that can be used in design guidance are proposed. Potential issues that should be investigated in future work are discussed.

scholarly journals A Statistical Method for Detecting Gravitational Recoils of Supermassive Black Holes in Active Galactic Nuclei

2016 ◽  
Vol 12 (S324) ◽  
pp. 227-230
Author(s):  
P. Raffai ◽  
B. Bécsy ◽  
Z. Haiman ◽  
Z. Frei
Keyword(s):  
Black Holes ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Active Galactic Nuclei ◽  
Galactic Nuclei ◽  
Supermassive Black Holes ◽  
Line Of Sight ◽  
Galactic Centre ◽  
Type Ii ◽  
Host Galaxies

AbstractWe propose an observational test for gravitationally recoiling supermassive black holes in active galactic nuclei, based on a positive correlation between the velocities of black holes relative to their host galaxies, |Δv|, and their obscuring dust column densities, Σdust, both measured along the line of sight. Our findings using a set of toy models implemented to a Monte Carlo simulation imply that models of the galactic centre and of recoil dynamics can be tested by future observations of the potential Σdust–|Δv| correlation. We have also found that the fraction of obscured quasars decreases with |Δv|, for which the predicted trend can be compared to the observed fraction of type II quasars, and can further test combinations of models we may implement.

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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