Higher Order Padé Approximation for the Parabolic Equation in a Varying Cross-Section Waveguide

2012 ◽  
Vol 98 (5) ◽  
pp. 691-699 ◽  
Author(s):  
Jean-Baptiste Doc ◽  
Bertrand Lihoreau ◽  
Simon Félix
Keyword(s):  
Parabolic Equation ◽  
Cross Section ◽  
Padé Approximation ◽  
Higher Order ◽  
Pade Approximation

Modeling of Rails Expressed using Pade Approximation Considering Frequency Dependent Effect

2017 ◽  
Vol 137 (2) ◽  
pp. 147-153
Author(s):  
Akinori Hori ◽  
Hiroki Tanaka ◽  
Yuichiro Hayakawa ◽  
Hiroshi Shida ◽  
Keiji Kawahara ◽  
...  
Keyword(s):  
Padé Approximation ◽  
Pade Approximation ◽  
Frequency Dependent ◽  
Dependent Effect

Carrier Redistribution Analysis of Gate-Biased SiC Power-MOSFET Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

2015 ◽  
Author(s):  
Norimichi Chinone ◽  
Yasuo Cho
Keyword(s):  
Cross Section ◽  
Measurement System ◽  
Higher Order ◽  
Depletion Layer ◽  
Gate Bias ◽  
Power Mosfet ◽  
Nonlinear Dielectric ◽  
Voltage Dependent ◽  
Carrier Redistribution ◽  
Source Voltage

Abstract Gate-bias dependent depletion layer distribution and carrier distributions in cross-section of SiC power MOSFET were measured by newly developed measurement system based on super-higher-order scanning nonlinear dielectric microscope. The results visualized gate-source voltage dependent redistribution of depletion layer and carrier.

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