scholarly journals Non-equilibrium Microwave Plasma for Efficient High Temperature Chemistry

10.3791/55066 ◽  
2017 ◽  
Author(s):  
Dirk van den Bekerom ◽  
Niek den Harder ◽  
Teofil Minea ◽  
Nicola Gatti ◽  
Jose Palomares Linares ◽  
...  
Keyword(s):  
High Temperature ◽  
Microwave Plasma ◽  
High Temperature Chemistry ◽  
Non Equilibrium

scholarly journals High-temperature chemistry of HCl and Cl2

2015 ◽  
Vol 162 (6) ◽  
pp. 2693-2704 ◽  
Author(s):  
Matteo Pelucchi ◽  
Alessio Frassoldati ◽  
Tiziano Faravelli ◽  
Branko Ruscic ◽  
Peter Glarborg
Keyword(s):  
High Temperature ◽  
High Temperature Chemistry

scholarly journals Исследование нелегированных нанокристаллических алмазных пленок, выращенных из газовой фазы в плазме СВЧ разряда

2021 ◽  
Vol 55 (1) ◽  
pp. 49
Author(s):  
А.Л. Вихарев ◽  
С.А. Богданов ◽  
Н.М. Овечкин ◽  
О.А. Иванов ◽  
Д.Б. Радищев ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Inert Gas ◽  
Dielectric Films ◽  
High Temperature Annealing ◽  
Structural And Electrical Properties ◽  
Methane Mixture

Undoped nanocrystalline diamond (NCD) films less than 1 μm thick grown on Si (100) silicon by microwave plasma-assisted chemical vapor deposition at a frequency of 2.45 GHz are studied. To obtain diamond dielectric films with maximum resistivity the deposition of films in three gas mixtures is investigated: hydrogen-methane mixture, hydrogen-methane mixture with the addition of oxygen and hydrogen-methane mixture with the addition of an inert gas. A relationship has been established between the growth conditions, structural and electrical properties of NCD films. It is shown that for the use of NCD films as effective dielectrics preliminary high-temperature annealing of the films is required, for example, in vacuum at a temperature of 600°C for one hour.

Sign in / Sign up

Export Citation Format

Share Document