High efficiency, high power QCW diode-side-pumped Nd:YAG ceramic laser at 1064 nm based on domestic ceramic

2010 ◽  
Vol 8 (12) ◽  
pp. 1144-1146 ◽  
Author(s):  
王元斌 Yuanbin Wang ◽  
王保山 Baoshan Wang ◽  
薄勇 Yong Bo ◽  
许家林 Jialin Xu ◽  
宋松 Song Song ◽  
...  
Keyword(s):  
High Power ◽  
High Efficiency ◽  
Ceramic Laser ◽  
Domestic Ceramic

670nm Single Wavelength Nd:YAG Ceramic Laser

2013 ◽  
Vol 321-324 ◽  
pp. 482-485
Author(s):  
Zhi Chao Wu ◽  
Xiu Li Zhang
Keyword(s):  
High Power ◽  
Doping Concentration ◽  
High Efficiency ◽  
Frequency Doubling ◽  
Single Pulse ◽  
Intracavity Frequency ◽  
Propagation Matrix ◽  
Ceramic Laser ◽  
Laser Diode Arrays ◽  
Further Development

The Nd:YAG ceramic laser at 670 nm was studied by means of dispersion prism and KTP intracavity-frequency-doubling. We designed and optimized the cavity parameters by MatrixLaser software based on the standard ABCD ray propagation matrix. By using the laser diode arrays side-pumped Nd:YAG ceramic crystal with Nd doping concentration of 1.1at% and dimension of Φ3×50 mm, the Nd:YAG ceramic laser at 670 nm was realized. Under repetition rate of 1 000Hz and single pulse pumped energy of 144 mJ, the output energy of 5.1mJ at 670 nm is obtained. The optic-optic efficiency is 3.54%. The results not only formed the basis for the further development of the high power and high efficiency ceramic red laser, but also provided a great prospect for the high power ceramic red laser in the field of medical treatment, color display and other areas of application.

scholarly journals High-efficiency, high-power and low threshold Yb^3+:YAG ceramic laser

2009 ◽  
Vol 17 (25) ◽  
pp. 23344 ◽  
Author(s):  
Angela Pirri ◽  
Daniele Alderighi ◽  
Guido Toci ◽  
Matteo Vannini
Keyword(s):  
High Power ◽  
High Efficiency ◽  
Low Threshold ◽  
Ceramic Laser

Progress in high-power high-efficiency VCSEL arrays

2009 ◽  
Author(s):  
Jean-Francois Seurin ◽  
Guoyang Xu ◽  
Viktor Khalfin ◽  
Alexander Miglo ◽  
James D. Wynn ◽  
...  
Keyword(s):  
High Power ◽  
High Efficiency ◽  
Vcsel Arrays

scholarly journals Near-field thermophotovoltaics for efficient heat to electricity conversion at high power density

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Rohith Mittapally ◽  
Byungjun Lee ◽  
Linxiao Zhu ◽  
Amin Reihani ◽  
Ju Won Lim ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Near Field ◽  
Electrical Power ◽  
Photovoltaic Cells ◽  
High Power Density ◽  
Pv Cell ◽  
Electrical Power Output ◽  
Power Densities

AbstractThermophotovoltaic approaches that take advantage of near-field evanescent modes are being actively explored due to their potential for high-power density and high-efficiency energy conversion. However, progress towards functional near-field thermophotovoltaic devices has been limited by challenges in creating thermally robust planar emitters and photovoltaic cells designed for near-field thermal radiation. Here, we demonstrate record power densities of ~5 kW/m2 at an efficiency of 6.8%, where the efficiency of the system is defined as the ratio of the electrical power output of the PV cell to the radiative heat transfer from the emitter to the PV cell. This was accomplished by developing novel emitter devices that can sustain temperatures as high as 1270 K and positioning them into the near-field (<100 nm) of custom-fabricated InGaAs-based thin film photovoltaic cells. In addition to demonstrating efficient heat-to-electricity conversion at high power density, we report the performance of thermophotovoltaic devices across a range of emitter temperatures (~800 K–1270 K) and gap sizes (70 nm–7 µm). The methods and insights achieved in this work represent a critical step towards understanding the fundamental principles of harvesting thermal energy in the near-field.

Design of a cascade high-power source with high efficiency

2018 ◽  
Author(s):  
Gangxiong Wu ◽  
Yanyu Wei ◽  
Qian Li ◽  
Xia Lei ◽  
Chong Ding ◽  
...  
Keyword(s):  
High Power ◽  
High Efficiency ◽  
Power Source

High-Power Power GaAs and High-Efficiency Ion-Implanted FETs for C and X Bands

2005 ◽  
Author(s):  
S. Yanagawa ◽  
Y. Yamada ◽  
M. Itoh ◽  
K. Arai ◽  
N. Tomita
Keyword(s):  
High Power ◽  
High Efficiency ◽  
Ion Implanted
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