scholarly journals A simple and precise method for the threshold current determination in vertical-cavity surface-emitting lasers

2020 ◽  
Vol 50 (2) ◽  
Author(s):  
Emilia Pruszyńska-Karbownik ◽  
Marcin Gębski ◽  
Magdalena Marciniak ◽  
James A. Lott ◽  
Tomasz Czyszanowski
Keyword(s):  
Spontaneous Emission ◽  
Threshold Current ◽  
Stimulated Emission ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Current Curve ◽  
Vertical Cavity Surface ◽  
Current Confinement ◽  
Emitting Lasers ◽  
Vertical Cavity

In this paper, we present experimental results of spontaneous emission clamping in the threshold for vertical-cavity surface-emitting lasers (VCSELs) with oxide current confinement. We show that the spontaneous emission not wholly clamps in the threshold. We propose a new method for determining the threshold current value using the study of the clamping phenomena. This method has an advantage over the commonly used methods in the accuracy because the current of the spontaneous emission clamping is betted defined than the current of the slope change of the stimulated emission light-current curve. The estimated uncertainty of the method is no more than 20 µA.

THERMAL EFFECTS IN VERTICAL-CAVITY SURFACE-EMITTING LASERS

1994 ◽  
Vol 05 (04) ◽  
pp. 667-730 ◽  
Author(s):  
MAREK OSIŃSKI ◽  
WŁODZIMIERZ NAKWASKI
Keyword(s):  
Thermal Modeling ◽  
Longitudinal Mode ◽  
Transverse Mode ◽  
Threshold Current ◽  
Cavity Surface ◽  
Relative Distribution ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

A comprehensive review of temperature-related effects and thermal modeling of vertical-cavity surface-emitting lasers (VCSELs) is presented. The paper is divided into two major parts. First, the effects of temperature on device characteristics are discussed, including the temperature dependence of the longitudinal mode spectra, the threshold current, the transverse-mode structure, and the output power. A new condition is formulated for thermal matching of the Bragg mirrors and the spacer region and a comparison is made between characteristic temperatures for the threshold current (T0) and for the external quantum efficiency (Tη). In the second part, various approaches to thermal modeling of VCSELs are described. Both simplified and comprehensive thermal models are considered and both analytical and numerical approaches are discussed. A new analytical approximate method for analysis of heat-flux spreading in multilayer structures is described. The most important results obtained with the aid of these models are presented. In particular, we show that the current dependence of thermal resistance is very sensitive to VCSEL structure, and is strongly influenced by the relative distribution of heat sources and their location with respect to the heat sink.

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