scholarly journals Investigation into MoTe2 based Dielectric Modulated AMFET Biosensor for Label-free detection of DNA including electric variational effects

2021 ◽  
Author(s):  
Arpan De ◽  
Sharmistha Shee ◽  
Subir Kumar Sarkar
Keyword(s):  
Dna Detection ◽  
Transition Metal Dichalcogenides ◽  
Strong Impact ◽  
Label Free ◽  
Threshold Voltage Shift ◽  
Back Gate ◽  
Label Free Detection ◽  
Metal Dichalcogenides ◽  
Electrode Interaction ◽  
The Impact

Due to limitations of Silicon, Transition metal dichalcogenides (TMD) based biosensors are popular in the recent times. In TMD family, Molybdenum telluride (MoTe2) is being studied a lot for different biosensing application. However, for DNA detection using TMD based DMFET, the effect of the electrical variations in DNA has not been studied before. Also, the impact of DNA-Electrode interaction on transducer level of DMFET is yet to be studied. In this article, we have proposed a Molybdenum telluride (MoTe2) based Accumulation Mode Field Effect Transistor (AMFET) for possible dielectric modulated biosensing application. The study is focused on DNA detection including the electric variations of DNA due to surface interaction. We have done a circuit level analysis of the proposed structure for having deeper insights into its performance under various DNA orientations in the nanogap. We have also presented a benchmarking to highlight the superior sensitivity of the proposed structure (∆V<sub>th </sub>= 700mV at K = 8). The impact of back-gate bias is also included. We have obtained significant variation of threshold voltage shift for different orientation in the proposed structure suggesting strong impact of electrical variations in DNA in biosensing performance of MoTe<sub>2</sub> AMFET.

scholarly journals Investigation into MoTe2 based Dielectric Modulated AMFET Biosensor for Label-free detection of DNA including electric variational effects

2021 ◽  
Author(s):  
Arpan De ◽  
Sharmistha Shee ◽  
Subir Kumar Sarkar
Keyword(s):  
Dna Detection ◽  
Transition Metal Dichalcogenides ◽  
Strong Impact ◽  
Label Free ◽  
Threshold Voltage Shift ◽  
Back Gate ◽  
Label Free Detection ◽  
Metal Dichalcogenides ◽  
Electrode Interaction ◽  
The Impact

Due to limitations of Silicon, Transition metal dichalcogenides (TMD) based biosensors are popular in the recent times. In TMD family, Molybdenum telluride (MoTe2) is being studied a lot for different biosensing application. However, for DNA detection using TMD based DMFET, the effect of the electrical variations in DNA has not been studied before. Also, the impact of DNA-Electrode interaction on transducer level of DMFET is yet to be studied. In this article, we have proposed a Molybdenum telluride (MoTe2) based Accumulation Mode Field Effect Transistor (AMFET) for possible dielectric modulated biosensing application. The study is focused on DNA detection including the electric variations of DNA due to surface interaction. We have done a circuit level analysis of the proposed structure for having deeper insights into its performance under various DNA orientations in the nanogap. We have also presented a benchmarking to highlight the superior sensitivity of the proposed structure (∆V<sub>th </sub>= 700mV at K = 8). The impact of back-gate bias is also included. We have obtained significant variation of threshold voltage shift for different orientation in the proposed structure suggesting strong impact of electrical variations in DNA in biosensing performance of MoTe<sub>2</sub> AMFET.

scholarly journals Investigation into MoTe2 based Dielectric Modulated AMFET Biosensor for Label-free Detection of DNA including Electric Variational Effects

2021 ◽  
Author(s):  
Arpan De ◽  
Sharmistha Shee ◽  
Subir Kumar Sarkar
Keyword(s):  
Dna Detection ◽  
Transition Metal Dichalcogenides ◽  
Strong Impact ◽  
Label Free ◽  
Threshold Voltage Shift ◽  
Back Gate ◽  
Label Free Detection ◽  
Metal Dichalcogenides ◽  
Electrode Interaction ◽  
The Impact

Abstract Due to limitations of Silicon, Transition metal dichalcogenides (TMD) based biosensors are popular in the recent times. In TMD family, Molybdenum telluride (MoTe2) is being studied a lot for different biosensing application. However, for DNA detection using TMD based DMFET, the effect of the electrical variations in DNA has not been studied before. Also, the impact of DNA-Electrode interaction on transducer level of DMFET is yet to be studied. In this article, we have proposed a Molybdenum telluride (MoTe2) based Accumulation Mode Field Effect Transistor (AMFET) for possible dielectric modulated biosensing application. The study is focused on DNA detection including the electric variations of DNA due to surface interaction. We have done a circuit level analysis of the proposed structure for having deeper insights into its performance under various DNA orientations in the nanogap. We have also presented a benchmarking to highlight the superior sensitivity of the proposed structure (ΔVth = 700mV at K =8). The impact of back-gate bias is also included. We have obtained significant variation of threshold voltage shift for different orientation in the proposed structure suggesting strong impact of electrical variations in DNA in biosensing performance of MoTe2 AMFET.

scholarly journals The Role of Surface Chemistry in the Efficacy of Protein and DNA Microarrays for Label-Free Detection: An Overview

Polymers ◽  
2021 ◽  
Vol 13 (7) ◽  
pp. 1026
Author(s):  
Elisa Chiodi ◽  
Allison M. Marn ◽  
Matthew T. Geib ◽  
M. Selim Ünlü
Keyword(s):  
Surface Chemistry ◽  
Surface Functionalization ◽  
Dna Microarrays ◽  
Label Free ◽  
Polymeric Coatings ◽  
Label Free Detection ◽  
Particle Imaging ◽  
Single Particle Imaging ◽  
The Impact

The importance of microarrays in diagnostics and medicine has drastically increased in the last few years. Nevertheless, the efficiency of a microarray-based assay intrinsically depends on the density and functionality of the biorecognition elements immobilized onto each sensor spot. Recently, researchers have put effort into developing new functionalization strategies and technologies which provide efficient immobilization and stability of any sort of molecule. Here, we present an overview of the most widely used methods of surface functionalization of microarray substrates, as well as the most recent advances in the field, and compare their performance in terms of optimal immobilization of the bioreceptor molecules. We focus on label-free microarrays and, in particular, we aim to describe the impact of surface chemistry on two types of microarray-based sensors: microarrays for single particle imaging and for label-free measurements of binding kinetics. Both protein and DNA microarrays are taken into consideration, and the effect of different polymeric coatings on the molecules’ functionalities is critically analyzed.

Phonon Coupling and Dielectric Response in 2D Semiconductor

NANO ◽  
2021 ◽  
Author(s):  
Arslan Usman ◽  
Abdul Sattar ◽  
Hamid Latif ◽  
Muhammad Imran
Keyword(s):  
Transition Metal Dichalcogenides ◽  
Coupling Mechanism ◽  
Two Dimensional ◽  
Electron Hole ◽  
Exciton Coupling ◽  
Gain Energy ◽  
Metal Dichalcogenides ◽  
Layered Transition Metal ◽  
The Impact

The impact of phonon and their surrounding environment on exciton and its complexes were investigated in monolayer WSe2 semiconductor. Phonon up-conversion has been studied in past for conventional III–V semiconductors, but its role in two-dimensional layered transition metal dichalcogenides has rarely been explored. We investigated the photoluminescence up-conversion mechanism in WSe2 monolayer and found that a lower energy photon gain energy upto 64[Formula: see text]meV to be up-converted to emission photon at room temperature. Moreover, the phonon-exciton coupling mechanism has also been investigated and the role of dielectric screening has been explored to get complete insight of coulomb’s interaction in these electron-hole pairs. Investigations of charge carrier’s lifetime reveal that boron nitride encapsulated monolayer has shorter recombination time as low as 41 ps as compared to a bare monolayer on SiO2 substrate. These results are very promising for realizing spintronics-based application from two-dimensional layered semiconductors.

scholarly journals Super-Nernstian ion sensitive field-effect transistor exploiting charge screening in WSe2/MoS2 heterostructure

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Sooraj Sanjay ◽  
Mainul Hossain ◽  
Ankit Rao ◽  
Navakanta Bhat
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Point Of Care ◽  
Low Cost ◽  
Ph Sensor ◽  
Detection Sensitivity ◽  
Label Free ◽  
Back Gate ◽  
Dielectric Thickness ◽  
Label Free Detection

AbstractIon-sensitive field-effect transistors (ISFETs) have gained a lot of attention in recent times as compact, low-cost biosensors with fast response time and label-free detection. Dual gate ISFETs have been shown to enhance detection sensitivity beyond the Nernst limit of 59 mV pH−1 when the back gate dielectric is much thicker than the top dielectric. However, the thicker back-dielectric limits its application for ultrascaled point-of-care devices. In this work, we introduce and demonstrate a pH sensor, with WSe2(top)/MoS2(bottom) heterostructure based double gated ISFET. The proposed device is capable of surpassing the Nernst detection limit and uses thin high-k hafnium oxide as the gate oxide. The 2D atomic layered structure, combined with nanometer-thick top and bottom oxides, offers excellent scalability and linear response with a maximum sensitivity of 362 mV pH−1. We have also used technology computer-aided (TCAD) simulations to elucidate the underlying physics, namely back gate electric field screening through channel and interface charges due to the heterointerface. The proposed mechanism is independent of the dielectric thickness that makes miniaturization of these devices easier. We also demonstrate super-Nernstian behavior with the flipped MoS2(top)/WSe2(bottom) heterostructure ISFET. The results open up a new pathway of 2D heterostructure engineering as an excellent option for enhancing ISFET sensitivity beyond the Nernst limit, for the next-generation of label-free biosensors for single-molecular detection and point-of-care diagnostics.

scholarly journals Noise Immune Dielectric Modulated Dual Trench Transparent Gate Engineered MOSFET as a Label Free Biosensor: Proposal and Investigation

2021 ◽  
Author(s):  
DIPANJAN SEN ◽  
Arpan De ◽  
Bijoy Goswami ◽  
Sharmistha Shee ◽  
Subir Kumar Sarkar
Keyword(s):  
High Frequency ◽  
Label Free ◽  
Threshold Voltage Shift ◽  
Enhanced Sensitivity ◽  
Label Free Detection ◽  
Drain Bias ◽  
Overall Performance ◽  
Detection Of Biomolecules ◽  
Insight Into ◽  
Positively Charged

Abstract In this work, we have examined and proposed a dielectrically modulated biosensor based on the dual trench transparent gate engineered MOSFET (DM DT GE-MOSFET) for label-free detection of biomolecules with enhanced sensitivity and efficiency. Different sensing parameters such as the ION/IOFF, threshold voltage shift have been evaluated to validate the sensing metric for the proposed device. Additionally, the SVth (Vth Sensitivity) has been also analyzed by considering the charged (positive and negative) biomolecules. In addition to this, the RF sensing parameters such as the transconductance gain and cut-off frequency have been also taken into account to provide a better insight into the sensitivity analysis of the proposed device. Furthermore, the linearity, distortion and noise immunity of the device has been evaluated to check the overall performance of the biosensor at high frequency (GHz). Moreover, the results indicate that, the proposed biosensor exhibits a SVth of 0.68 for the positively charged biomolecules at a very low drain bias (0.2 V). Therefore, the proposed device can be used as an alternative to the conventional FET-based biosensors.

A carbon ink screen-printed immunoelectrode for Dengue virus NS1protein detection based on photosynthesized amine gold nanoparticles

2018 ◽  
pp. 1-12
Keyword(s):  
Gold Nanoparticles ◽  
Dengue Virus ◽  
Limit Of Detection ◽  
Colloidal Suspension ◽  
Electrochemical Immunosensor ◽  
Label Free ◽  
Vis Spectroscopy ◽  
Label Free Detection ◽  
The Impact ◽  
Screen Printed

Dengue virus (DENV) is a reemerging mosquito-borne disease that is endemic in more than 125 countries, affecting 200 million people per year. Screening testing has been a good attempt to minimize the impact caused by high morbity and mortality rates of DENV. In this study, a simple and disposable label-free electrochemical immunosensor based on a carbon ink graphite screen-printed electrode (SPE) one-step fabricated was developed for detection of non-structural 1 protein (NS1). The SPE surface was modified by drop casting, depositing a colloidal suspension containing amine-functionalized gold nanoparticles (AuNP-NH2). AuNPs were synthetized by a photoinduced physical method, illuminating preformed gold seeds with a light-emitting diode (LED,) at blue region, by using the polyethyleneimine (NH2) as reductor and stabilizing agent. UV-VIS spectroscopy and Transmission Electron Microscopy (TEM) were used to characterize the amine AuNPs. Electrocatalytic activity of AuNPs allowed more sensitivity for a label-free detection of NS1 by square wave voltammetry (SWV), with linear response from 0.1 to 2 µg mL-1. It was found a good linearity (coefficient of correlation of 0.995 (p<0.01) and a limit of detection of 0.03 µg mL-1 NS1 for analytical responses. AuNP-NH2 synthesis provided an easy oriented immobilization of anti-NS1 antibodies by Fc portion, resulting in a simple fabrication immunosensor with relative high performance and feasibility for early diagnostic of DENV.

The Role of Two-Dimensional Materials in Electromagnetic Interference Shielding

2021 ◽  
pp. 1254-1270
Author(s):  
Rafael Vargas-Bernal
Keyword(s):  
Electromagnetic Interference ◽  
Transition Metal Dichalcogenides ◽  
Environmental Stability ◽  
Two Dimensional ◽  
Shielding Effectiveness ◽  
Electromagnetic Interference Shielding ◽  
Two Dimensional Materials ◽  
Metal Dichalcogenides ◽  
Materials Used ◽  
The Impact

Commonly, metallic materials are used in practical ways to increase the shielding effectiveness (SE) through an appropriately designed assembly process. Unfortunately, the high density of devices that require it and the poor environmental stability of metals have impeded their massive use. In addition, for applications in the automotive, aerospace, and electronics industries, materials with light weight and good chemical stability are also required. The purpose of this chapter is to describe the impact that two-dimensional materials (or 2D materials) are having on the development of materials used for electromagnetic interference shielding, particularly the impulse of materials such as graphene, MXenes, transition metal dichalcogenides (TMDs), and phosphorene. The advances in the last decade are analyzed and alternatives are proposed that will come in the next decades. The shielding mechanisms presented by the two-dimensional materials are analyzed in detail and the specific applications in which these materials can be used are presented.

A label-free fluorescent probe for Hg2+ based on boron- and nitrogen-doped photoluminescent WS2

RSC Advances ◽  
2016 ◽  
Vol 6 (55) ◽  
pp. 49668-49674 ◽  
Author(s):  
Bo Feng ◽  
Xiaojia Liu ◽  
Yizhi Zheng ◽  
Qian Xiao ◽  
Na Wu ◽  
...  
Keyword(s):  
Transition Metal ◽  
Fluorescent Probe ◽  
Material Properties ◽  
Electronic Devices ◽  
Transition Metal Dichalcogenides ◽  
Basic Material ◽  
Label Free ◽  
Nitrogen Doped ◽  
Wide Range ◽  
Metal Dichalcogenides

The air-stable doping of transition-metal dichalcogenides is important in enabling a wide range of optoelectronic and electronic devices while exploring basic material properties.

scholarly journals Chemically Functionalised Graphene FET Biosensor for the Label-free Sensing of Exosomes

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Deana Kwong Hong Tsang ◽  
Tyler J. Lieberthal ◽  
Clare Watts ◽  
Iain E. Dunlop ◽  
Sami Ramadan ◽  
...  
Keyword(s):  
Dirac Point ◽  
Early Stage ◽  
Graphene Film ◽  
Microfluidic Channel ◽  
Label Free ◽  
Back Gate ◽  
Graphene Field Effect Transistor ◽  
Label Free Detection ◽  
Source Current ◽  
Graphene Fet

Abstract A graphene field-effect transistor (gFET) was non-covalently functionalised with 1-pyrenebutyric acid N-hydroxysuccinimide ester and conjugated with anti-CD63 antibodies for the label-free detection of exosomes. Using a microfluidic channel, part of a graphene film was exposed to solution. The change in electrical properties of the exposed graphene created an additional minimum alongside the original Dirac point in the drain-source current (Ids) - back-gate voltage (Vg) curve. When phosphate buffered saline (PBS) was present in the channel, the additional minimum was present at a Vg lower than the original Dirac point and shifted with time when exosomes were introduced into the channel. This shift of the minimum from the PBS reference point reached saturation after 30 minutes and was observed for multiple exosome concentrations. Upon conjugation with an isotype control, sensor response to the highest concentration of exosomes was negligible in comparison to that with anti-CD63 antibody, indicating that the functionalised gFET can specifically detect exosomes at least down to 0.1 μg/mL and is sensitive to concentration. Such a gFET biosensor has not been used before for exosome sensing and could be an effective tool for the liquid-biopsy detection of exosomes as biomarkers for early-stage identification of diseases such as cancer.

Sign in / Sign up

Export Citation Format

Share Document