scholarly journals Orthogonally polarized RF single sideband generation with Kerr microcombs

Author(s):  
David Moss

<div>e review recent work on narrowband orthogonally polarized optical RF single sideband generators as well as dual-channel equalization, both based on high-Q integrated ring resonators. The devices operate in the optical telecommunications C-band and enable RF operation over a range of either fixed or thermally tuneable frequencies. They operate via TE/TM mode birefringence in the resonator. We achieve a very large dynamic tuning range of over 55 dB for both the optical carrier-to-sideband ratio and the dual-channel RF equalization for both the fixed and tunable devices.</div>

2020 ◽  
Author(s):  
David Moss

<div>e review recent work on narrowband orthogonally polarized optical RF single sideband generators as well as dual-channel equalization, both based on high-Q integrated ring resonators. The devices operate in the optical telecommunications C-band and enable RF operation over a range of either fixed or thermally tuneable frequencies. They operate via TE/TM mode birefringence in the resonator. We achieve a very large dynamic tuning range of over 55 dB for both the optical carrier-to-sideband ratio and the dual-channel RF equalization for both the fixed and tunable devices.</div>


2020 ◽  
Author(s):  
David Moss

<div>e review recent work on narrowband orthogonally polarized optical RF single sideband generators as well as dual-channel equalization, both based on high-Q integrated ring resonators. The devices operate in the optical telecommunications C-band and enable RF operation over a range of either fixed or thermally tuneable frequencies. They operate via TE/TM mode birefringence in the resonator. We achieve a very large dynamic tuning range of over 55 dB for both the optical carrier-to-sideband ratio and the dual-channel RF equalization for both the fixed and tunable devices.</div>


2021 ◽  
Author(s):  
David Moss

We review recent work on narrowband orthogonally polarized optical RF single sideband generators as well as dual-channel equalization, both based on high-Q integrated ring resonators. The devices operate in the optical telecommunications C-band and enable RF operation over a range of either fixed or thermally tuneable frequencies. They operate via TE/TM mode birefringence in the resonator. We achieve a very large dynamic tuning range of over 55 dB for both the optical carrier-to-sideband ratio and the dual-channel RF equalization for both the fixed and tunable devices.


2021 ◽  
Author(s):  
mengxi tan ◽  
xingyuan xu ◽  
David Moss

Abstract We report narrowband orthogonally polarized optical RF single sideband generators as well as dual-channel RF equalization, both based on high-Q integrated ring resonators. The devices operate in the optical telecommunications C-band and enable RF operation over a range of either fixed or thermally tunable frequencies. They operate via TE/TM mode birefringence in the resonator. We achieve a very large dynamic tuning range of over 55 dB for both the optical carrier-to-sideband ratio and the dual-channel RF equalization for both the fixed and tunable devices.


2020 ◽  
Author(s):  
David Moss

We demonstrate an orthogonally polarized optical single sideband (OP-OSSB) generator based on dual cascaded micro-ring resonators (MRRs). We achieve a large tuning range of the optical carrier to sideband ratio of up to 57.3 dB. The operation RF frequency of the OP-OSSB generator can also be continuously tuned with a 21.4 GHz range via independent thermal control of the two MRRs.


2021 ◽  
Vol 42 (4) ◽  
pp. 041305
Author(s):  
Mengxi Tan ◽  
Xingyuan Xu ◽  
Jiayang Wu ◽  
Thach G. Nguyen ◽  
Sai T. Chu ◽  
...  

2002 ◽  
Vol 14 (10) ◽  
pp. 1442-1444 ◽  
Author(s):  
D.G. Rabus ◽  
M. Hamacher ◽  
U. Troppenz ◽  
H. Heidrich
Keyword(s):  

2013 ◽  
Vol 684 ◽  
pp. 443-446
Author(s):  
Chao Liu ◽  
Chen Yang Xue ◽  
Dan Feng Cui ◽  
Jun Bin Zang ◽  
Yong Hua Wang ◽  
...  

We designed High-Q micro-ring resonators based on SOI material. A new method of using a top SiO2 layer to cover the waveguide is applied and the tested Q factor is as high as 1.0135×104. Micro-ring resonator has been fabricated using Electron-Beam Lithography and Inductive Coupled Plasma. OptiFDTD was used to simulate the micro-ring resonator and we compared the transmission spectrum of this resonator with the resonator without SiO2 covering.


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