scholarly journals RESEARCH ON A MAGNETIC FIELD SENSOR WITH A FREQUENCY OUTPUT SIGNAL BASED ON A TUNNEL-RESONANCE DIODE

Author(s):  
Alexander Osadchuk ◽  
Vladimir Osadchuk ◽  
Iaroslav Osadchuk

Based on the consideration of physical processes in a tunnel-resonant diode under the action of a magnetic field, the construction of an autogenerating magnetic field sensor with a frequency output signal is proposed. The use of devices with negative differential resistance makes it possible to significantly simplify the design of magnetic field sensors in the entire RF frequency range. Depending on the operating modes of the sensor, an output signal can be obtained in the form of harmonic oscillations, as well as in the form of pulse oscillations of a special form. The study of the characteristics of the magnetic field sensor is based on the complete equivalent circuit of the tunnel-resonant diode. The equivalent circuit takes into account both the capacitive and inductive properties of the tunneling resonant diode. The inductive component exists under any operating conditions, as a result of the fact that the current flowing through the device is always lagging behind the voltage that caused it, which corresponds to the inductive response of a tunnel-resonant diode.

2021 ◽  
Vol 295 (2) ◽  
pp. 156-164
Author(s):  
A. OSADCHUK ◽  
◽  
V. OSADCHUK ◽  
O. OSADCHUK ◽  
◽  
...  

Physical processes in a quantum two-barrier heterostructure, which is the basis for the development of tunnel-resonant diodes, are considered. These studies have shown that tunnel resonance diodes can be used as temperature sensors with a frequency output signal. The use of devices with negative differential resistance makes it possible to significantly simplify the design of temperature sensors in the entire radio frequency range, at which, depending on the operating modes of the sensor, an output signal can be obtained both in the form of harmonic oscillations and in the form of impulse oscillations of a special form. The study of the characteristics of the sensor is based on the equivalent circuit of the tunnel-resonant diode, which takes into account its capacitive and inductive properties. The current-voltage characteristic of the sensor has a falling section, which is responsible for the appearance of a negative differential resistance in this section. The descending section arises due to a decrease in the current that flows through the double-barrier quantum heterostructure, with an increase in voltage. A decrease in the current occurs due to a decrease in the transparency coefficient of the potential barriers of the heterostructure. A mathematical model of the temperature sensor has been developed, on the basis of which the analytical dependences of the change in the elements of the equivalent circuit of the sensor on temperature, as well as the transformation function and sensitivity, have been determined. It is shown that the main contribution to changes in the conversion function and sensor sensitivity is made by the change in the negative differential resistance with a change in temperature. This, in turn, results in different readings of the instrument’s output frequency. The sensor sensitivity was varied from 480 kHz/0С to 220 kHz/0С in the temperature range from -150 0С to 50 0С.


2019 ◽  
Vol 33 (31) ◽  
pp. 1950380
Author(s):  
Jie Wang ◽  
Zhen Zhang ◽  
Shuguang Li ◽  
Shun Wang

A novel micro-structured fiber magnetic field sensor based on magnetic fluid (MF) filling is proposed. The air hole radius in the cladding of fiber is reduced from inner layer to outer layer, and the numerical analysis is performed by the finite element method (FEM). For the [Formula: see text]-pol mode, the proposed sensor has an average sensitivity of 960.61 pm/Oe, and for the [Formula: see text]-pol mode, the average sensitivity can reach 884.85 pm/Oe. The sensor has the advantages of small size and high sensitivity and is competitive in magnetic field sensors.


2006 ◽  
Vol 15 (5) ◽  
pp. 1098-1107 ◽  
Author(s):  
R. Sunier ◽  
T. Vancura ◽  
Y. Li ◽  
K.-U. Kirstein ◽  
H. Baltes ◽  
...  

2021 ◽  
Author(s):  
Tekin Izgi ◽  
M. Pektas ◽  
V.S. Kolat ◽  
N. Bayri ◽  
S. Atalay

Abstract A magnetic field sensor was developed using asymmetric giant magnetoimpedance (AGMI) effect. Amorphous ferromagnetic (Fe0.06Co0.94) 72.5Si12.5B15 wires were used in this study. The 2 cm long wire showed about 88 % and the 7 cm long wire showed about 197 % giant magnetoimpedance effect. When two micro magnets were placed 1 cm away from the ends of the wire, a distortion in two peak shapes of the GMI curve was observed and asymmetry was created by micro magnets and 7 cm long wire showed about 148 % AGMI effect. A simple and a new approach was designed to develop a magnetic field sensor, in the design circuit two signal generators were used to arrange linearity and dc offset in the output signal. The circuit output showed good linearity and zero hysteresis at ±250 A/m and ± 50 A/m magnetic field regions for 2cm wires long and 7 cm wires long, respectively.


1991 ◽  
Vol 28 (3) ◽  
pp. 231-234 ◽  
Author(s):  
S.V. Gumenjuk ◽  
B.I. Podlepetsky ◽  
V.V. Kremliov ◽  
N.A. Polyanskykh

Author(s):  
P.J. Garcí­a-Ramí­rez ◽  
F. Sandoval-Ibarra ◽  
E.A. Gutiérrez-Domí­nguez

A Si magnetic field-sensitive split-drain MOSFET has been used to study and analyze the effects of a magnetic field on the charge carrier conduction at liquid-nitrogen temperature. In magnetic field sensors (MFS), a key parameter is the Hall angle, which indicates the current line deviation due to the Lorentz force acting on the charge carriers. If temperature is lowered, the carrier mobility increases, therefore, an increase in carrier deflection is expected. To understand the internal deflection of carriers, and optimize the design of a magnetic field sensor, a semi-analytic model has been developed. Using such a model, a MFS has been fabricated and tested. The first experimental results are presented in this work.


2021 ◽  
Vol 31 (5) ◽  
pp. 1-5
Author(s):  
Ivan P. Nevirkovets ◽  
Mikhail A. Belogolovskii ◽  
Oleg A. Mukhanov ◽  
John B. Ketterson

2021 ◽  
Vol 168 ◽  
pp. 112467
Author(s):  
Andre Torres ◽  
Karel Kovarik ◽  
Tomas Markovic ◽  
Jiri Adamek ◽  
Ivan Duran ◽  
...  

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