scholarly journals Recent Advances and Opportunities of Lead-Free Perovskite Nanocrystal for Optoelectronic Application

2021 ◽  
Vol 2021 ◽  
pp. 1-38
Author(s):  
Fei Zhang ◽  
Zhuangzhuang Ma ◽  
Zhifeng Shi ◽  
Xu Chen ◽  
Di Wu ◽  
...  
Keyword(s):  
Lead Toxicity ◽  
Environmental Stability ◽  
Lead Free ◽  
Attractive Alternative ◽  
Comprehensive Overview ◽  
Light Emitting ◽  
Practical Applications ◽  
Light Emitting Devices ◽  
Optoelectronic Application ◽  
Optoelectronic Applications

Metal halide perovskite nanocrystals (NCs), as a new class of light-emitting and light-harvesting materials, have recently attracted intensive attention for an impressive variety of optoelectronic applications. However, the lead toxicity and poor stability of such materials severely restrict their practical applications and future commercialization. Lead-free perovskite NCs and their derivatives, designed by the reasonable chemical substitution of Pb with other nontoxic elements, are recently booming as an attractive alternative to lead-based counterparts. In this review, we firstly present a comprehensive overview of currently explored lead-free perovskite NCs with an emphasis on their design routes, morphologies, optoelectronic properties, and environmental stability issues. Then, we discuss the preliminary achievements of lead-free perovskite NCs in versatile optoelectronic applications, such as light-emitting devices, solar cells, photodetectors, and photocatalysis. We finish this review with a critical outlook into the currently existing challenges and possible development opportunities of this rapidly evolving field.

Efficient organic manganese (II) bromide green-light-emitting diodes enabled by manipulating hole and electron transport layer

2021 ◽  
Author(s):  
Hyunsik Im ◽  
Atanu Jana ◽  
Vijaya Gopalan Sree ◽  
QIANKAI BA ◽  
Seong Chan Cho ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
Transport Layer ◽  
Lead Free ◽  
Electron Transport Layer ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Inorganic Hybrid ◽  
Light Emitting ◽  
Light Emitting Devices

Lead-free, non-toxic transition metal-based phosphorescent organic–inorganic hybrid (OIH) compounds are promising for next-generation flat-panel displays and solid-state light-emitting devices. In the present study, we fabricate highly efficient phosphorescent green-light-emitting diodes...

Plexcitonics – fundamental principles and optoelectronic applications

2019 ◽  
Vol 7 (7) ◽  
pp. 1821-1853 ◽  
Author(s):  
Ajay P. Manuel ◽  
Aaron Kirkey ◽  
Najia Mahdi ◽  
Karthik Shankar
Keyword(s):  
Electromagnetic Radiation ◽  
Light Harvesting ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Optoelectronic Applications

The nanoscale confinement and coupling of electromagnetic radiation into plexcitonic modes has drawn immense interest because of the innovative possibilities for their application in light harvesting and light emitting devices (LEDs).

Ultrastable Lead-Free Double Perovskite Warm-White Light-Emitting Devices with a Lifetime above 1000 Hours

2020 ◽  
Vol 12 (41) ◽  
pp. 46330-46339
Author(s):  
Sen Li ◽  
Zhifeng Shi ◽  
Fei Zhang ◽  
Lintao Wang ◽  
Zhuangzhuang Ma ◽  
...  
Keyword(s):  
White Light ◽  
Double Perovskite ◽  
Lead Free ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Warm White Light

Electrically-Driven Violet Light-Emitting Devices Based on Highly Stable Lead-Free Perovskite Cs3Sb2Br9 Quantum Dots

2019 ◽  
Vol 5 (2) ◽  
pp. 385-394 ◽  
Author(s):  
Zhuangzhuang Ma ◽  
Zhifeng Shi ◽  
Dongwen Yang ◽  
Fei Zhang ◽  
Sen Li ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Lead Free ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Violet Light

Heteroepitaxy of GaN on Silicon: In Situ Measurements

2005 ◽  
Vol 483-485 ◽  
pp. 1051-1056
Author(s):  
A. Krost ◽  
Armin Dadgar ◽  
F. Schulze ◽  
R. Clos ◽  
K. Haberland ◽  
...  
Keyword(s):  
Low Cost ◽  
Group Iii Nitrides ◽  
In Situ Monitoring ◽  
Attractive Alternative ◽  
Light Emitting ◽  
Group Iii ◽  
Light Emitting Devices ◽  
Thermal Expansion Coefficients ◽  
Long Time

Due to the lack of GaN wafers, so far, group-III nitrides are mostly grown on sapphire or SiC substrates. Silicon offers an attractive alternative because of its low cost, large wafer area, and physical benefits such as the possibility of chemical etching, lower hardness, good thermal conductivity, and electrical conducting or isolating for light emitting devices or transistor structures, respectively. However, for a long time, a technological breakthrough of GaN-on-silicon has been thought to be impossible because of the cracking problem originating in the huge difference of the thermal expansion coefficients between GaN and silicon which leads to tensile strain and cracking of the layers when cooling down. However, in recent years, several approaches to prevent cracking and wafer bowing have been successfully applied. Nowadays, device-relevant thicknesses of crackfree group-III-nitrides can be grown on silicon. To reach this goal the most important issues were the identification of the physical origin of strains and its engineering by means of in situ monitoring during metalorganic vapor phase epitaxy.

Properties and potential optoelectronic applications of lead halide perovskite nanocrystals

Science ◽  
2017 ◽  
Vol 358 (6364) ◽  
pp. 745-750 ◽  
Author(s):  
Maksym V. Kovalenko ◽  
Loredana Protesescu ◽  
Maryna I. Bodnarchuk
Keyword(s):  
Silicon Germanium ◽  
Semiconductor Nanocrystals ◽  
Structural Defects ◽  
Defect Tolerance ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Optical And Electronic Properties ◽  
Benign Nature ◽  
Optoelectronic Applications ◽  
Lead Halide

Semiconducting lead halide perovskites (LHPs) have not only become prominent thin-film absorber materials in photovoltaics but have also proven to be disruptive in the field of colloidal semiconductor nanocrystals (NCs). The most important feature of LHP NCs is their so-called defect-tolerance—the apparently benign nature of structural defects, highly abundant in these compounds, with respect to optical and electronic properties. Here, we review the important differences that exist in the chemistry and physics of LHP NCs as compared with more conventional, tetrahedrally bonded, elemental, and binary semiconductor NCs (such as silicon, germanium, cadmium selenide, gallium arsenide, and indium phosphide). We survey the prospects of LHP NCs for optoelectronic applications such as in television displays, light-emitting devices, and solar cells, emphasizing the practical hurdles that remain to be overcome.

Lead-Free Perovskite Nanocrystals for Light-Emitting Devices

2018 ◽  
Vol 9 (7) ◽  
pp. 1573-1583 ◽  
Author(s):  
Jia Sun ◽  
Jeehye Yang ◽  
Jong Ik Lee ◽  
Jeong Ho Cho ◽  
Moon Sung Kang
Keyword(s):  
Lead Free ◽  
Light Emitting ◽  
Perovskite Nanocrystals ◽  
Light Emitting Devices
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